Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits von Krishnamoorthy, A.V., Chirovsky, L.M.F., Hobson, W.S., Leibengath, R.E., Hui, S.P., Zydzik, G.J., Goossen, K.W., Wynn, J.D., Tseng, B.J., Lopata, J., Walker, J.A., Cunningham, J.E., D'Asaro, L.A.

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Tight Glycemic Control in Critically Ill Children von Agus, Michael S.D, Wypij, David, Hirshberg, Eliotte L, Srinivasan, Vijay, Faustino, E. Vincent, Luckett, Peter M, Alexander, Jamin L, Asaro, Lisa A, Curley, Martha A.Q, Steil, Garry M, Nadkarni, Vinay M

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Abstract O-22: SEDATION MANAGEMENT FOR CRITICALLY ILL CHILDREN WITH PRE-EXISTING COGNITIVE IMPAIRMENTS: IS IT DIFFERENT? von Best, K., Curley, M.A.Q., Asaro, L.A.

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GaAs MQW modulators integrated with silicon CMOS von Goossen, K.W., Walker, J.A., D'Asaro, L.A., Hui, S.P., Tseng, B., Leibenguth, R., Kossives, D., Bacon, D.D., Dahringer, D., Chirovsky, L.M.F., Lentine, A.L., Miller, D.A.B.

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16 x 16 VCSEL array flip-chip bonded to CMOS VLSI circuit von Krishnamoorthy, A.V., Goossen, K.W., Chirovsky, L.M.F., Rozier, R.G., Chandramani, P., Hui, S.P., Lopata, J., Walker, J.A., D'Asaro, L.A.

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Energy scaling and subnanosecond switching of symmetric self-electrooptic effect devices von Lentine, A.L., Chirovsky, L.M.F., D'Asaro, L.A., Tu, C.W., Miller, D.A.B.

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16×16 VCSEL array flip-chip bonded to CMOS VLSI circuit von Krishnamoorthy, A.V, Goossen, K.W, Chirovsky, L.M.F, Rozier, R.G, Chandramani, P, Hui, S.P, Lopata, J, Walker, J.A, D'Asaro, L.A

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Batch fabrication and operation of GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electrooptic effect device (FET-SEED) smart pixel arrays von D'Asaro, L.A., Chirovsky, L.M.F., Laskowski, E.J., Pei, S.S., Woodward, T.K., Lentine, A.L., Leibenguth, R.E., Focht, M.W., Freund, J.M., Guth, G.G., Smith, L.E.

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Implant-apertured and index-guided vertical-cavity surface-emitting lasers (I2-VCSELs) von Chirovsky, L.M.F., Hobson, W.S., Leibenguth, R.E., Hui, S.P., Lopata, J., Zydzik, G.J., Giaretta, G., Goossen, K.W., Wynn, J.D., Krishnmaoorthy, A.V., Tseng, B.J., Vandenberg, J.M., D'Asaro, L.A.

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Degradation of CW GaAs double-heterojunction lasers at 300 K von De Loach, B.C., Hakki, B.W., Hartman, R.L., D'Asaro, L.A.

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Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operation von Dyment, J.C., D'Asaro, L.A., North, J.C., Miller, B.I., Ripper, J.E.

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1-Gb/s two-beam transimpedance smart-pixel optical receivers made from hybrid GaAs MQW modulators bonded to 0.8 μm silicon CMOS von Woodward, T.K., Krishnamoorthy, A.V., Lentine, A.L., Goossen, K.W., Walker, J.A., Cunningham, J.E., Jan, W.Y., D'Asaro, L.A., Chirovsky, L.M.F., Hui, S.P., Tseng, B., Kossives, D., Dahringer, D., Leibenguth, R.E.

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3-D integration of MQW modulators over active submicron CMOS circuits: 375 Mb/s transimpedance receiver-transmitter circuit von Krishnamoorthy, A.V., Lentine, A.L., Goossen, K.W., Walker, J.A., Woodward, T.K., Ford, J.E., Aplin, G.F., D'Asaro, L.A., Hui, S.P., Tseng, B., Leibenguth, R., Kossives, D., Dahringer, D., Chirovsky, M.F., Miller, D.A.B.

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High-speed optoelectronic VLSI switching chip with >4000 optical I/O based on flip-chip bonding of MQW modulators and detectors to silicon CMOS von Lentine, A.L., Goossen, K.W., Walker, J.A., Chirovsky, L.M.F., D'Asaro, L.A., Hui, S.P., Tseng, B.J., Leibenguth, R.E., Cunningham, J.E., Jan, W.Y., Kuo, J.-M., Dahringer, D.W., Kossives, D.P., Bacon, D.D., Livescu, G., Morrison, R.L., Novotny, R.A., Buchholz, D.B.

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Optimization of absorption in symmetric self-electrooptic effect devices: a systems perspective von Lentine, A.L., Miller, D.A.B., Chirovsky, L.M.F., D'Asaro, L.A.

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Arrays of optoelectronic switching nodes comprised of flip-chip-bonded MQW modulators and detectors on silicon CMOS circuitry von Lentine, A.L., Goossen, K.W., Walker, J.A., Chirovsky, L.M.F., D'Asaro, L.A., Hui, S.P., Tseng, B.T., Leibenguth, R.E., Kossives, D.P., Dahringer, D.W., Bacon, D.D., Woodward, T.K., Miller, D.A.B.

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A 2 kbit array of symmetric self-electrooptic effect devices von Lentine, A.L., McCormick, F.B., Novotny, R.A., Chirovsky, L.M.F., D'Asaro, L.A., Kopf, R.F., Kuo, J.M., Boyd, G.D.

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High speed 24 array of differential quantum well modulators von Lentine, A.L., Chirovsky, L.M.F., D'Asaro, L.A., Kopf, R.F., Kuo, J.M.

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Ring oscillators with monolithically integrated-optical readout based on GaAs-AlGaAs FET-SEED technology von Woodward, T.K., Novotny, R.A., Lentine, A.L., Chirovsky, L.M.F., D'Asaro, L.A., Hui, S., Focht, M.W., Guth, G.D., Smith, L.E., Leibenguth, R.E.

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Field effect transistor-self electrooptic effect device (FET-SEED) differential transimpedance amplifiers for two-dimensional optical data links von Novotny, R.A., Wojcik, M.J., Lentine, A.L., Chirovsky, L.M.F., D'Asaro, L.A., Focht, M.W., Guth, G., Glogovsky, K.G., Leibenguth, R., Asom, M.T., Freund, J.M.

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