The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs von Grabowski, Mikolaj, Grzanka, Ewa, Grzanka, Szymon, Lachowski, Artur, Smalc-Koziorowska, Julita, Czernecki, Robert, Hrytsak, Roman, Moneta, Joanna, Gawlik, Grzegorz, Turos, Andrzej, Leszczyński, Mike

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Elimination of trench defects and V-pits from InGaN/GaN structures von Smalc-Koziorowska, Julita, Grzanka, Ewa, Czernecki, Robert, Schiavon, Dario, Leszczyński, Mike

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In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum Wells von Grzanka, Ewa, Bauer, Sondes, Lachowski, Artur, Grzanka, Szymon, Czernecki, Robert, So, Byeongchan, Baumbach, Tilo, Leszczyński, Mike

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Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers von Czernecki, Robert, Kret, Slawomir, Kempisty, Pawel, Grzanka, Ewa, Plesiewicz, Jerzy, Targowski, Greg, Grzanka, Szymon, Bilska, Marta, Smalc-Koziorowska, Julita, Krukowski, Stanislaw, Suski, Tadek, Perlin, Piotr, Leszczynski, Mike

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Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells von Czernecki, Robert, Grzanka, Ewa, Smalc-Koziorowska, Julita, Grzanka, Szymon, Schiavon, Dario, Targowski, Grzegorz, Plesiewicz, Jerzy, Prystawko, Pawel, Suski, Tadeusz, Perlin, Piotr, Leszczynski, Mike

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Influence of the growth method on degradation of InGaN laser diodes von Bojarska, Agata, Muzio, Grzegorz, Skierbiszewski, Czes aw, Grzanka, Ewa, Wi niewski, Przemys aw, Makarowa, Irina, Czernecki, Robert, Suski, Tadek, Perlin, Piotr

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Suppression of extended defects propagation in a laser diodes structure grown on (20-21) GaN von Marona, Lucja, Smalc-Koziorowska, Julita, Grzanka, Ewa, Sarzynski, Marcin, Suski, Tadek, Schiavon, Dario, Czernecki, Robert, Perlin, Piotr, Kucharski, Robert, Domagala, Jaroslaw

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Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes von Perlin, Piotr, Holc, Katarzyna, Sarzyński, Marcin, Scheibenzuber, Wolfgang, Marona, Łucja, Czernecki, Robert, Leszczyński, Mike, Bockowski, Michał, Grzegory, Izabella, Porowski, Sylwester, Cywiński, Grzegorz, Firek, Piotr, Szmidt, Jan, Schwarz, Ulrich, Suski, Tadek

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Temperature dependence of superluminescence in InGaN-based superluminescent light emitting diode structures von Holc, Katarzyna, Marona, Łucja, Czernecki, Robert, Boćkowski, Michał, Suski, Tadeusz, Najda, Stephen, Perlin, Piotr

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Lateral Control of Indium Content and Wavelength of III--Nitride Diode Lasers by Means of GaN Substrate Patterning von Sarzyński, Marcin, Suski, Tadeusz, Staszczak, Grzegorz, Khachapuridze, Aleksander, Domaga$ł$a, Jaros$ł$aw Z, Czernecki, Robert, Plesiewicz, Jerzy, Paw$ł$owska, Joanna, Najda, Stephen P, Boćkowski, Micha$ł$, Perlin, Piotr, Leszczyński, Micha$ł$

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On Morphology of Aluminum-Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants' Pressure and Ammonia Flow Rate von Jaroszynski, Arianna, Dabrowski, Michal, Sadovy, Petro, Bockowski, Michal, Czernecki, Robert, Sochacki, Tomasz

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Direct observation of long distance lateral transport in InGaN/GaN quantumwells von Korona, Krzysztof P, Sarzyński Marcin, Czernecki, Robert, Suski Tadeusz

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Hydrogen diffusion in GaN:Mg and GaN:Si von Czernecki, Robert, Grzanka, Ewa, Jakiela, Rafal, Grzanka, Szymon, Skierbiszewski, Czeslaw, Turski, Henryk, Perlin, Piotr, Suski, Tadek, Donimirski, Konstanty, Leszczynski, Mike

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Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth von Czernecki, Robert, Moszak, Karolina, Olszewski, Wojciech, Grzanka, Ewa, Leszczynski, Mike

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Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells von Smalc-Koziorowska, Julita, Grzanka, Ewa, Lachowski, Artur, Hrytsak, Roman, Grabowski, Mikolaj, Grzanka, Szymon, Kret, Slawomir, Czernecki, Robert, Turski, Henryk, Marona, Lucja, Markurt, Toni, Schulz, Tobias, Albrecht, Martin, Leszczynski, Mike

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Effect of doping of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability von Lachowski, Artur, Grzanka, Ewa, Czernecki, Robert, Grabowski, Mikołaj, Grzanka, Szymon, Leszczyński, Mike, Smalc-Koziorowska, Julita

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Improving thermal stability of InGaN quantum wells by doping of GaN barrier layers von Lachowski, Artur, Grzanka, Ewa, Grzanka, Szymon, Czernecki, Robert, Grabowski, Mikołaj, Hrytsak, Roman, Nowak, Grzegorz, Leszczyński, Mike, Smalc-Koziorowska, Julita

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Elimination of AlGaN epilayer cracking by spatially patterned AlN mask von Sarzyński, Marcin, Kryśko, Marcin, Targowski, Grzegorz, Czernecki, Robert, Sarzyńska, Agnieszka, Libura, Adam, Krupczyński, Wiktor, Perlin, Piotr, Leszczyński, Michał

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Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth von Niedzielski, Przemyslaw, Raj, Ewa, Lisik, Zbigniew, Plesiewicz, Jerzy, Grzanka, Ewa, Czernecki, Robert, Leszczynski, Mike

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Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers von Czernecki, Robert, Grzanka, Ewa, Strak, Pawel, Targowski, Greg, Krukowski, Stanislaw, Perlin, Piotr, Suski, Tadeusz, Leszczynski, Mike

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