Temperature-Dependent RF Large-Signal Model of GaN-Based MOSHFETs von Jie Deng, Weike Wang, Halder, S., Curtice, W.R., Hwang, J., Adivarahan, V., Khan, M.A.

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Nonlinear modeling of compound semiconductor HEMTs state of the art von Curtice, Walter R

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Safe Operating Area of GaAs HBTs Based on Sub-Nanosecond Pulse Characteristics von Renfeng Jin, Cheng Chen, Halder, Subrata, Curtice, Walter R, Hwang, James C M

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Modeling and Characterization of Effects of Dummy-Gate Bias on LDMOSFETs von Marbell, M.N., Cherepko, S.V., Hwang, J.C.M., Shibib, M.A., Curtice, W.R.

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Adaptive LDMOSFET Drain and Dummy-Gate Biases for Highly Modulated Signals von Marbell, M.N., Cherepko, S.V., Curtice, W.R., Hwang, J., Shibib, M.A.

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Sub-nanosecond pulse characteristics of InGaP/GaAs HBTs von Renfeng Jin, Cheng Chen, Halder, Subrata, Curtice, Walter R, Hwang, James C M

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Sub-Nanosecond Greater-Than-10-V Compact Tunable Pulse Generator for Low-Duty-Cycle High-Peak-Power Ultra-Wideband Applications von Hwang, James C. M., Curtice, Walter R., Halder, Subrata, Jin, Renfeng, Law, Choi L.

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Safe Operating Area of GaAs HBTs Based on Sub-Nanosecond Pulse Characteristics: SPECIAL ISSUE ON 2010 INTERNATIONAL MICROWAVE SYMPOSIUM von RENFENG JIN, CHENG CHEN, HALDER, Subrata, CURTICE, Walter R, HWANG, James C. M

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Effects of bias and load conditions on dynamic self-heating of bipolar transistors von Cherepko, S.V., Hwang, J.C.M., Curtice, W.R.

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Sub-nanosecond pulse characteristics of InGaP/GaAs HBTs von Jin, R., Chen, C., Halder, S., Curtice, W. R., Hwang, J. C.

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Scaling and high-frequency performance of AlN/GaN HEMTs von Luo, Xi, Halder, Subrata, Curtice, Walter R., Hwang, James C. M., Chabak, Kelson D., Walker, Dennis E., Dabiran, Amir M.

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Reliability and Validity of the Migraine Therapy Assessment Questionnaire von Chatterton, Mary Lou, Lofland, Jennifer H., Shechter, Aaron, Curtice, Walter Scott, Hu, X. Henry, Lenow, Jeffrey, Smullens, Stanton N., Nash, David B., Silberstein, Stephen D.

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GaAs MESFET modeling and nonlinear CAD von Curtice, W.R.

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A MESFET Model for Use in the Design of GaAs Integrated Circuits von Curtice, W.R.

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A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers von Curtice, W.R., Ettenberg, M.

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Comparison of hybrid pi and Tee HBT circuit topologies and their relationship to large signal modeling von Teeter, D.A., Curtice, W.R.

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Charge-collection characteristics of GaAs MESFETs fabricated with a low-temperature grown GaAs buffer layer: computer simulation von McMorrow, D., Curtice, W.R., Buchner, S., Knudson, A.R., Melinger, J.S., Campbell, A.B.

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Scaling and High-Frequency Performance of AlN/GaN HEMTs von Luo, Xi, Halder, Subrata, Curtice, Walter R, Hwang, James C M, Chabak, Kelson D, Walker, Dennis E, Jr, Dabiran, Amir M

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Significant reduction in the soft error susceptibility of GaAs field-effect transistors with a low-temperature grown GaAs buffer layer von Weatherford, Todd R., McMorrow, Dale, Campbell, Arthur B., Curtice, Walter R.

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Charge-collection mechanisms of AlGaAs/GaAs HBTs von McMorrow, D., Melinger, J.S., Knudson, A.R., Buchner, S., Campbell, A.B., Curtice, W.R.

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