Epitaxial oxide thin films on Si(001) von Yu, Z., Ramdani, J., Curless, J. A., Overgaard, C. D., Finder, J. M., Droopad, R., Eisenbeiser, K. W., Hallmark, J. A., Ooms, W. J., Kaushik, V. S.

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Optical properties of bulk and thin-film SrTiO3 on Si and Pt von Zollner, Stefan, Demkov, A. A., Liu, R., Fejes, P. L., Gregory, R. B., Alluri, Prasad, Curless, J. A., Yu, Z., Ramdani, J., Droopad, R., Tiwald, T. E., Hilfiker, J. N., Woollam, J. A.

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Comparative study of Sr and Ba adsorption on Si(1 0 0) von Hu, Xiaoming, Yu, Z., Curless, J.A., Droopad, R., Eisenbeiser, K., Edwards, J.L., Ooms, W.J., Sarid, D.

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Field effect transistors with SrTiO3 gate dielectric on Si von Eisenbeiser, K., Finder, J. M., Yu, Z., Ramdani, J., Curless, J. A., Hallmark, J. A., Droopad, R., Ooms, W. J., Salem, L., Bradshaw, S., Overgaard, C. D.

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Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy von Yu, Z., Ramdani, J., Curless, J. A., Finder, J. M., Overgaard, C. D., Droopad, R., Eisenbeiser, K. W., Hallmark, J. A., Ooms, W. J., Conner, J. R., Kaushik, V. S.

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Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy von Ramdani, J, Droopad, R, Yu, Z, Curless, J.A, Overgaard, C.D, Finder, J, Eisenbeiser, K, Hallmark, J.A, Ooms, W.J, Kaushik, V, Alluri, P, Pietambaram, S

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Properties of AlxGa1-xAs (xAl~0.3) grown by molecular-beam epitaxy on misoriented substrates von TSUI, R. K, CURLESS, J. A, KRAMER, G. D, PEFFLEY, M. S

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Effects of substrate misorientation on the properties of (Al, Ga)As grown by molecular beam epitaxy von TSUI, R. K, CURLESS, J. A, KRAMER, G. D, PEFFLEY, M. S, RODE, D. L

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Band alignment at epitaxial SrTiO3–GaAs(001) heterojunction von Liang, Y., Curless, J., McCready, D.

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Low-frequency noise in heterojunction FETs with low-temperature buffer von Tehrani, S., van Rheenen, A.D., Hoogstra, M.M., Curless, J.A., Peffley, M.S.

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Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates von TSUI, R. K, KRAMER, G. D, CURLESS, J. A, PEFFLEY, M. S

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Barium adsorption on Si(100)-(2×1) at room temperature: a bi-polar scanning tunneling microscopy study von Hu, X., Yao, X., Peterson, C.A., Sarid, D., Yu, Z., Wang, J., Marshall, D.S., Curless, J.A., Ramdani, J., Droopad, R., Hallmark, J.A., Ooms, W.J.

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Excess drain current in heterojunction FETs due to substrate space-charge-limited current von Tehrani, S., Goronkin, H., Hoogstra, M.M., Maracas, G.N., Curless, J.A., Kramer, G.D., Peffley, M.S., Tsui, R.K.

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Superior low-noise GaAs MESFET's with graded channel grown by MBE von Nair, V.K., Tam, G., Curless, J.A., Kramer, G.D., Peffley, M.S., Tsui, R.K., Atkins, W.K.

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The effects of substrate oxygen content and preannealing on the properties of silicon epitaxial layers von TSUI, R. K, CURLESS, J. A, SECCO DARAGONA, F, FEJES, P. L

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Growth of AlGaAs and GaAs by atmospheric-pressure MOCVD on lenticular substrates von Johnson, E.S., Legg, G.E., Curless, J.A.

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The dependence of room-temperature photoluminescence efficiency of Si-doped AlxGa1-xAs on the V/III flux ratio used during growth by molecular-beam epitaxy von TSUI, R. K, CURLESS, J. A, KRAMER, G. D, PEFFLEY, M. S

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Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy von RAMDANI, J, DROOPAD, R, ALLURI, P, PIETAMBARAM, S, YU, Z, CURLESS, J. A, OVERGAARD, C. D, FINDER, J, EISENBEISER, K, HALLMARK, J. A, OOMS, W. J, KAUSHIK, V

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Properties of Al x Ga1− x As ( x Al≂0.3) grown by molecular-beam epitaxy on misoriented substrates von Tsui, R. K., Curless, J. A., Kramer, G. D., Peffley, M. S., Wicks, G. W.

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Development of integrated heterostructures on silicon by MBE von Droopad, R., Curless, J.A., Yu, Z., Jordan, D.C., Liang, Y., Overgaard, C.D., Li, H., Eschrich, T., Craigo, B., Eisenbeiser, K.W., Finder, J., Hu, X., Wei, Y., Edwards, J., Ramdani, J., Tisinger, L., Demkov, A., Moore, K., Marshall, D., Ooms, W.J., Prendergast, J.

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