IBMM of OH adsorbates and interphases on Si-based materials von Herbots, N., Xing, Qian, Hart, M., Bradley, J.D., Sell, D.A., Culbertson, R.J., Wilkens, Barry J.

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Growth and structure of epitaxial CeO2 films on yttria-stabilized ZrO2 von WU, F, PAVLOVSKA, A, SMITH, D. J, CULBERTSON, R. J, WILKENS, B. J, BAUER, E

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The formation of ordered, ultrathin SiO2/Si(100) interfaces grown on (1 × 1) Si(100) von HERBOTS, N, SHAW, J. M, HURST, Q. B, GRAMS, M. P, CULBERTSON, R. J, SMITH, David J, ATLURI, V, ZIMMERMAN, P, QUEENEY, K. T

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Ion Beam Analysis Of Silicon-Based Surfaces And Correlation With Surface Energy Measurements von Xing Qian, Herbots, N., Hart, M., Bradley, J. D., Wilkens, B. J., Sell, D. A., Culbertson, R. J., Whaley, S. D., Sell, Clive H., Kwong, Henry Mark Jr

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Relaxation and H coverage of ammonium fluoride treated Si(111) von Copel, M., Culbertson, R. J., Tromp, R. M.

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Comparison between predicted strain values using elastic theory and experimental strain values for SiGeC alloy films grown on Si(001) von Sego, S., Culbertson, R.J., Bair, A.E., Alford, T.L.

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Atomic Displacements in the Si(111)-(7×7) Surface von Culbertson, R. J., Feldman, L. C., Silverman, P. J.

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An X-ray diffraction study of the strain and structure of SiGeC/(100)Si alloys von Bair, A.E., Alford, T.L., Sego, S., Atzmon, Z., Culbertson, R.J.

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Subsurface strain in the Ge(001) and Ge(111) surfaces and comparison to silicon von Culbertson, R.J., Kuk, Y., Feldman, L.C.

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A graduate program for high school physics and physical science teachers von Hestenes, D, Megowan-Romanowicz, C, Osborn Popp, S. E, Jackson, J, Culbertson, R. J

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Ion scattering study of reconstruction in the Au(110)-(1×2) surface von Withrow, S.P., Barrett, J.H., Culbertson, R.J.

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Atomic displacement free interfaces and atomic registry in SiO2∕(1×1) Si(100) von Shaw, Justin M., Herbots, N., Hurst, Q. B., Bradley, D., Culbertson, R. J., Atluri, V., Queeney, K. T.

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Angular symmetry of the ion scattering surface yield for large outerlayer relaxations von Culbertson, R.J., Barrett, J.H., Withrow, S.P.

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Atomic displacement free interfaces and atomic registry in Si O 2 ∕ ( 1 × 1 ) Si(100) von Shaw, Justin M., Herbots, N., Hurst, Q. B., Bradley, D., Culbertson, R. J., Atluri, V., Queeney, K. T.

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Field-ion microscopy of liquid-metal gallium von Sakurai, Toshio, Culbertson, R. J., Robertson, G. H.

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Atomic displacement free interfaces and atomic registry in SiO{sub 2}/(1x1) Si(100) von Shaw, Justin M., Herbots, N., Hurst, Q. B., Bradley, D., Culbertson, R. J., Atluri, V., Queeney, K. T., Department of Chemistry, Smith College, Northampton, Massachusetts 01063

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Optical emission from Ga ionization at a field emitter von Kuk, Young, Sakurai, T., Culbertson, R. J., Robertson, G. H.

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Performance evaluation of ion-implanted cutting tools and dies von Culbertson, R.J., Burns, F.C., Franzen, W., Lowder, L.J., Ricca, J.J., Gonzales, A.

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Quenched magnetic moment in Mn-doped amorphous Si films von Zeng, Li, Helgren, E., Rahimi, M., Hellman, F., Islam, R., Wilkens, B. J., Culbertson, R. J., Smith, David J.

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Ion implantation for corrosion inhibition of aluminum alloys in saline media von Williams, J.M., Gonzales, A., Quintana, J., Lee, I.-S., Buchanan, R.A., Burns, F.C., Culbertson, R.J., Levy, M., Treglio, J.R.

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