Efficient iron doping of HVPE GaN von Freitas, J.A., Culbertson, J.C., Glaser, E.R., Richter, E., Weyers, M., Oliveira, A.C., Garg, V.K.

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HVPE GaN wafers with improved crystalline and electrical properties von Freitas, J.A., Culbertson, J.C., Mahadik, N.A., Sochacki, T., Iwinska, M., Bockowski, M.S.

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Homoepitaxial HVPE GaN: A potential substrate for high performance devices von Freitas, J.A., Culbertson, J.C., Mahadik, N.A., Tadjer, M.J., Wu, S., Raghothamachar, B., Dudley, M., Sochacki, T., Bockowski, M.

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Nanoscale zinc silicate from phytoliths von Qadri, S.B., Gorzkowski, E.P., Rath, B.B., Feng, C.R., Amarasinghe, R., Freitas, J.A., Culbertson, J.C., Wollmershauser, J.A.

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Incorporation of pervasive impurities on HVPE GaN growth directions von Freitas, J.A., Culbertson, J.C., Mahadik, N.A., Glaser, E.R., Sochacki, T., Bockowski, M., Lee, S.K., Shim, K.B.

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GaN decomposition in H 2 and N 2 at MOVPE temperatures and pressures von Koleske, D.D., Wickenden, A.E., Henry, R.L., Culbertson, J.C., Twigg, M.E.

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Surface reconstruction phase diagrams for InAs, AlSb, and GaSb von Bracker, A.S, Yang, M.J, Bennett, B.R, Culbertson, J.C, Moore, W.J

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Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces von Bassim, N. D., Twigg, M. E., Eddy, C. R., Culbertson, J. C., Mastro, M. A., Henry, R. L., Holm, R. T., Neudeck, P. G., Trunek, A. J., Powell, J. A.

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Very-long wave ternary antimonide superlattice photodiode with 21 μm cutoff von Aifer, E. H., Jackson, E. M., Boishin, G., Whitman, L. J., Vurgaftman, I., Meyer, J. R., Culbertson, J. C., Bennett, B. R.

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Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC von Koleske, D. D., Henry, R. L., Twigg, M. E., Culbertson, J. C., Binari, S. C., Wickenden, A. E., Fatemi, M.

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Investigation of three-step epilayer growth approach of GaN films to minimize compensation von EDDY, C. R, HOLM, R. T, HENRY, R. L, CULBERTSON, J. C, TWIGG, M. E

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Structure of III-Sb(001) growth surfaces: the role of heterodimers von Barvosa-Carter, W, Bracker, AS, Culbertson, JC, Nosho, BZ, Shanabrook, BV, Whitman, LJ, Kim, H, Modine, NA, Kaxiras, E

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Structural and optical properties of thick freestanding GaN templates von Freitas, J.A., Braga, G.C.B., Moore, W.J., Tischler, J.G., Culbertson, J.C., Fatemi, M., Park, S.S., Lee, S.K., Park, Y.

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Characterization of one-dimensional quantum channels in InAs/AlSb von Yang, C. H., Yang, M. J., Cheng, K. A., Culbertson, J. C.

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A nanofabrication scheme for InAs/AlSb heterostructures von Yang, M. J., Cheng, K. A., Yang, C. H., Culbertson, J. C.

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Microstructure of heteroepitaxial GaN grown on mesa-patterned 4H-SiC substrates von Bassim, N. D., Twigg, M. E., Eddy, C. R., Henry, R. L., Holm, R. T., Culbertson, J. C., Stahlbush, R. E., Neudeck, P. G., Trunek, A. J., Powell, J. A.

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Optical probe of microwave current distributions in high temperature superconducting transmission lines von Culbertson, James C., Newman, Harvey S., Wilker, Charles

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Nucleation layer microstructure, grain size, and electrical properties in GaN grown on a -plane sapphire von Twigg, M. E., Henry, R. L., Wickenden, A. E., Koleske, D. D., Culbertson, J. C.

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The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films von Wickenden, A. E., Koleske, D. D., Henry, R. L., Gorman, R. J., Culbertson, J. C., Twigg, M. E.

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A novel InAs quantum wire system von Yang, C.H, Yang, M.J, Cheng, K.A, Culbertson, J.C

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