Effect of hydrogen on the chemical bonding and band structure at the Al2O3/In0.53Ga0.47As interface von Shekhter, Pini, Kornblum, Lior, Liu, Zuoguang, Cui, Sharon, Ma, T. P., Eizenberg, Moshe

Volltext

Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors von Chang, Sung-Jae, Kang, Hee-Sung, Lee, Jae-Hoon, Yang, Jie, Bhuiyan, Maruf, Jo, Young-Woo, Cui, Sharon, Lee, Jung-Hee, Ma, Tso-Ping

Volltext

Inelastic electron tunneling spectroscopy study of ultrathin Al2O3–TiO2 dielectric stack on Si von Liu, Zuoguang, Cui, Sharon, Kornblum, Lior, Eizenberg, Moshe, Chang, Ming-Feng, Ma, T. P.

Volltext

High-Quality Al2O3 for Low-Voltage High-Speed High-Temperature (Up to 250 °C) Nonvolatile Memory Technology von SHARON CUI, PENG, Cheng-Yi, WENQI ZHANG, XIAO SUN, JIE YANG, ZUOGUANG LIU, KORNBLUM, Lior, EIZENBERG, Moshe, MA, T. P

Volltext

LipidA-IDER to Explore the Global Lipid A Repertoire of Drug-Resistant Gram-Negative Bacteria von Guan, Xue Li, Loh, Johnathan Yi-Xiong, Lizwan, Marco, Chan, Sharon Cui Mun, Kwan, Jeric Mun Chung, Lim, Tze Peng, Koh, Tse Hsien, Hsu, Li-Yang, Lee, Bernett Teck Kwong

Volltext

Draft Genome Sequence of Enterobacter hormaechei subsp. steigerwaltii Strain BEI01 von Wee, Soon Keong, Chan, Sharon Cui Mun, Guan, Xue Li, Yap, Eric Peng Huat

Volltext

Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs von Xiao Sun, Saadat, Omair I., Jin Chen, Zhang, E. Xia, Cui, Sharon, Palacios, Tomas, Fleetwood, Dan M., Ma, T. P.

Volltext

A study of electrically active traps in AlGaN/GaN high electron mobility transistor von Yang, Jie, Cui, Sharon, Ma, T. P., Hung, Ting-Hsiang, Nath, Digbijoy, Krishnamoorthy, Sriram, Rajan, Siddharth

Volltext

Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs von Shufeng Ren, Mengwei Si, Kai Ni, Xin Wan, Jin Chen, Sungjae Chang, Xiao Sun, En Xia Zhang, Reed, Robert A., Fleetwood, Daniel M., Peide Ye, Cui, Sharon, Ma, T. P.

Volltext

Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal-oxide-semiconductor capacitors von Sun, Xiao, Merckling, Clement, Brammertz, Guy, Lin, Dennis, Dekoster, Johan, Cui, Sharon, Ma, T. P.

Volltext

AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact von Xiao Sun, Cui, S., Alian, A., Brammertz, G., Merckling, C., Lin, D., Ma, T. P.

Volltext

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors von Yang, Jie, Cui, Sharon, Ma, T. P., Hung, Ting-Hsiang, Nath, Digbijoy, Krishnamoorthy, Sriram, Rajan, Siddharth

Volltext

Effect of H on interface properties of Al2O3/In0.53Ga0.47As von Liu, Zuoguang, Cui, Sharon, Shekhter, Pini, Sun, Xiao, Kornblum, Lior, Yang, Jie, Eizenberg, Moshe, Chang-Liao, K. S., Ma, T. P.

Volltext

Effect of hydrogen on the chemical bonding and band structure at the Al 2 O 3 /In 0.53 Ga 0.47 As interface von Shekhter, Pini, Kornblum, Lior, Liu, Zuoguang, Cui, Sharon, Ma, T. P., Eizenberg, Moshe

Volltext

Inelastic Electron Tunneling Spectroscopy Study of Thin Gate Dielectrics von Reiner, James W., Cui, Sharon, Liu, Zuoguang, Wang, Miaomiao, Ahn, Charles H., Ma, T. P.

Volltext

Inelastic electron tunneling spectroscopy study of ultrathin Al 2 O 3 - TiO 2 dielectric stack on Si von Liu, Zuoguang, Cui, Sharon, Kornblum, Lior, Eizenberg, Moshe, Chang, Ming-Feng, Ma, T. P.

Volltext

Effect of H on interface properties of Al 2 O 3 /In 0.53 Ga 0.47 As von Liu, Zuoguang, Cui, Sharon, Shekhter, Pini, Sun, Xiao, Kornblum, Lior, Yang, Jie, Eizenberg, Moshe, Chang-Liao, K. S., Ma, T. P.

Volltext

High-Quality hbox Al 2 hbox O 3 for Low-Voltage High-Speed High-Temperature (Up to 250 [compfn] hbox C ) Nonvolatile Memory Technology von Cui, Sharon, Peng, Cheng-Yi, Zhang, Wenqi, Sun, Xiao, Yang, Jie, Liu, Zuoguang, Kornblum, Lior, Eizenberg, Moshe, Ma, T P

Volltext

High-Quality [Formula Omitted] for Low-Voltage High-Speed High-Temperature (Up to 250 [Formula Omitted]) Nonvolatile Memory Technology von Cui, Sharon, Peng, Cheng-Yi, Zhang, Wenqi, Sun, Xiao, Yang, Jie, Liu, Zuoguang, Kornblum, Lior, Eizenberg, Moshe, Ma, T. P

Volltext

High-Quality \hbox\hbox for Low-Voltage High-Speed High-Temperature (Up to 250 ^\hbox ) Nonvolatile Memory Technology von Cui, Sharon, Cheng-Yi Peng, Wenqi Zhang, Xiao Sun, Jie Yang, Zuoguang Liu, Kornblum, Lior, Eizenberg, Moshe, Ma, T P

Volltext