Study of heavy ion induced single event gate rupture effect in SiC MOSFETs von Xiaowen, Liang, Haonan, Feng, Xiaojuan, Pu, Jiangwei, Cui, Jing, Sun, Ying, Wei, Dan, Zhang, Xuefeng, Yu, Qi, Guo

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Degradation Mechanisms of Gate leakage in GaN-based HEMTs at Low Dose Rate Irradiation von Li, Xiaolong, Wang, Xin, Liu, Mohan, Zhu, Kunfeng, Shui, Guohua, Zheng, Qiwen, Cui, Jiangwei, Lu, Wu, Li, Yudong, Guo, Qi

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Total Ionizing Dose Influence on the Single-Event Upset Sensitivity of 130-nm PD SOI SRAMs von Zheng, Qiwen, Cui, Jiangwei, Liu, Mengxin, Zhou, Hang, Liu, Mohan, Wei, Ying, Su, Dandan, Ma, Teng, Lu, Wu, Yu, Xuefeng, Guo, Qi, He, Chengfa

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The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET von Wang, Baoshun, Cui, Jiangwei, Guo, Qi, Zheng, Qiwen, Wei, Ying, Xi, Shanxue

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A comparison of TEM data from different near-source systems von Zhou, Nannan, Xue, Guoqiang, Chen, Weiying, Cui, Jiangwei, Chen, Kang

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Impact of switching frequencies on the TID response of SiC power MOSFETs von Yang, Sheng, Liang, Xiaowen, Cui, Jiangwei, Zheng, Qiwen, Sun, Jing, Liu, Mohan, Zhang, Dang, Feng, Haonan, Yu, Xuefeng, Xiang, Chuanfeng, Li, Yudong, Guo, Qi

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A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs von Zhao, Jinghao, Zheng, Qiwen, Cui, Jiangwei, Zhou, Hang, Liang, Xiaowen, Yu, Xuefeng, Guo, Qi

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Total Ionizing Dose Effects on 22 nm UTBB FD-SOI MOSFETs up to 100 Mrad(Si) von Zhang, Ruiqin, Cui, Jiangwei, Li, Yudong, Guo, Qi, Zheng, Qiwen

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Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells von Zheng, Qiwen, Cui, Jiangwei, Li, Yudong, Guo, Qi

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Comparison of Total Ionizing Dose Effects in 16-nm Core and I/O n-FinFETs von Wu, Haowen, Cui, Jiangwei, Li, Yudong, Guo, Qi, Zheng, Qiwen

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Anneal Behavior of Total Ionizing Dose Irradiated UTBB FD-SOI n-MOSFETs Activated by Hot Carrier Stress von Zheng, Qiwen, Cui, Jiangwei, Yu, Xuefeng, Li, Yudong, Guo, Qi

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Impact of High TID Irradiation on Stability of 65 nm SRAM Cells von Cui, Jiangwei, Zheng, Qiwen, Li, Yudong, Guo, Qi

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Enhanced Total Ionizing Dose Response of 16 nm n-FinFETs With a Single Fin von Wei, Xuewen, Cui, Jiangwei, Luo, Deng, Yu, Gang, Li, Yudong, Guo, Qi, Zheng, Qiwen

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Total dose responses and reliability issues of 65 nm NMOSFETs von 余德昭 郑齐文 崔江维 周航 余学峰 郭旗

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3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors von 张晋新 郭红霞 文林 郭旗 崔江维 王信 邓伟 郑齐文 范雪 肖尧

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Bias Dependence of Total Ionizing Dose Response in UTBB FD-SOI transistors von Zhang, Ruiqin, Zheng, Qiwen, Cui, Jiangwei, Li, Yudong, Yu, Xuefeng, Lu, Wu, Guo, Qi

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Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology von Zheng, Qiwen, Cui, Jiangwei, Yu, Xuefeng, Li, Yudong, Lu, Wu, He, Chengfa, Guo, Qi

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Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers von Zheng, Qiwen, Cui, Jiangwei, Yu, Xuefeng, Li, Yudong, Lu, Wu, He, Chengfa, Guo, Qi

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Total dose ionizing irradiation effects on a static random access memory field programmable gate array von Gao, Bo, Yu, Xuefeng, Ren, Diyuan, Li, Yudong, Sun, Jing, Cui, Jiangwei, Wang, Yiyuan, Li, Ming

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Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs von 崔江维 薛耀国 余学峰 任迪远 卢健 张兴尧

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