Anisotropic etching of crystalline silicon in alkaline solutions. I, Orientation dependence and behavior of passivation layers von SEIDEL, H, CSEPREGI, L, HEUBERGER, A, BAUMGÄRTEL, H

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Anisotropic etching of crystalline silicon in alkaline solutions. II, Influence of dopants von SEIDEL, H, CSEPREGI, L, HEUBERGER, A, BAUMGÄRTEL, H

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Anisotropic etching of germanium von Leancu, Ralu, Moldovan, N., Csepregi, L., Lang, W.

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Coronary artery bypass grafting on the beating heart: 13-years experience in a single center von Bogáts, G, Hegedüs, Z, Bitay, M, Csepregi, L, Szabó-Biczók, A, Varga, S, Iglói, G, Bari, G

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X-Ray investigation of boron- and germanium-doped silicon epitaxial layers von HERZOG, H.-J, CSEPREGI, L, SEIDEL, H

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Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si von Csepregi, L., Kennedy, E. F., Mayer, J. W., Sigmon, T. W.

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Regrowth behavior of ion-implanted amorphous layers on 〈111〉 silicon von Csepregi, L., Mayer, J. W., Sigmon, T. W.

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Our experiences with off pump coronary artery bypass surgery: retrospective analysis of 2587 patients von Szolnoky, J, Hegedüs, Z, Bitay, M, Csepregi, L, Babik, B, Bogáts, G

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Stress modification and characterization of thin SiC films grown by plasma-enhanced chemical vapour deposition von Schliwinski, H.-J., Pelka, M., Buchmann, L.-M., Windbracke, W., Lange, P., Csepregi, L.

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Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si von Csepregi, L., Mayer, J.W., Sigmon, T.W.

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Ion-beam shadow printing through thin silicon foils using channeling von Csepregi, L., Iberl, F., Eichinger, P.

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Micromechanics: A silicon microfabrication technology von Csepregi, L.

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Disorder produced by high-dose implantation in Si von Csepregi, L., Kennedy, E. F., Lau, S. S., Mayer, J. W., Sigmon, T. W.

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Comparison of electronic effects and stress effects in enhancing regrowth rate of ion-implanted amorphous Si von PAI, C. S, LAU, S. S, SUNI, I, CSEPREGI, L

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The early history of solid phase epitaxial growth von Csepregi, Laszlo, Gyulai, Jozsef, Lau, S.S.

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Resist materials for sub-0.5-μm pattern transfer with demagnifying ion projection lithography (IPL) von Stangl, G., Cekan, E., Jacob, S., Fallmann, W., Paschke, F., Buchmann, L.M., Müller, K.P., Csepregi, L., Heuberger, A., Hammel, E., Traher, C., Löschner, H., Stengl, G.

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Design optimization for cantilever-type accelerometers von Seidel, H., Csepregi, L.

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Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals von Csepregi, L., Küllen, R.P., Mayer, J.W., Sigmon, T.W.

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Ion Implantation Gettering of Gold in Silicon von Sigmon, T. W., Csepregi, L., Mayer, J. W.

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Dechanneling by twins von Foti, G., Csepregi, L., Kennedy, E., Pronko, P., Mayer, J.W.

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