1 µm MOSFET VLSI technology: Part VII-Metal silicide interconnection technology-A future perspective von Crowder, B.L., Zirinsky, S.

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1 /spl mu/m MOSFET VLSI technology. VII. Metal silicide interconnection technology - A future perspective von Crowder, B.L., Zirinsky, S.

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Raman scattering in amorphous Si, Ge and III–V semiconductors von Smith, J.E., Brodsky, M.H., Crowder, B.L., Nathan, M.I.

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Erratum: Defining the ``random'' spectrum as used in the channeling technique of nuclear backscattering von Ziegler, J.P., Crowder, B.L.

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The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon von Crowder, Billy L.

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ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON von Crowder, B. L., Title, R. S., Brodsky, M. H., Pettit, G. D.

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Ion implantation doping of Si with 70 to 300 keV B, P, and As von Crowder, B.L., Fairfield, J.M.

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Elastic and Anelastic Behavior of Ion-Implanted Silicon von Tan, S. I., Berry, B. S., Crowder, B. L.

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1 /spl mu/m MOSFET VLSI technology. V. A single-level polysilicon technology using electron-beam lithography von Hunter, W.R., Ephrath, L., Grobman, W.D., Osburn, C.M., Crowder, B.L., Cramer, A., Luhn, H.E.

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ANNEALING CHARACTERISTICS OF n -TYPE DOPANTS IN ION-IMPLANTED SILICON von Crowder, B. L., Morehead, F. F.

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Defining the ``Random'' Spectrum as Used in the Channeling Technique of Nuclear Backscattering von Ziegler, J. F., Crowder, B. L.

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1 µm MOSFET VLSI technology: Part V-A single-level polysilicon technology using electron-beam lithography von Hunter, W.R., Ephrath, L., Grobman, W.D., Osburn, C.M., Crowder, B.L., Cramer, A., Luhn, H.E.

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Range distribution of implanted ions in SiO2, Si3N4, and Al2O3 von Chu, W.K., Crowder, B.L., Mayer, J.W., Ziegler, J.F.

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Light sensitive, efficient electroluminescent ZnTe switching diodes von Crowder, B.L., Morehead, F.F.

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The distribution of damage produced by ion implantation of silicon at room temperature von Crowder, B. L., Title, R. S.

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Boron atom distributions in ion-implanted silicon by the ( n ,4He) nuclear reaction von Ziegler, J.F., Crowder, B.L., Cole, G.W., Baglin, J.E.E., Masters, B.J.

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A model for the formation of amorphous Si by ion bombardment von Morehead, F. F., Crowder, B. L.

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Simple Design for an Ion Source of the Oscillating Electron Beam Type von Crowder, Billy L., Penebre, N. A.

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X-ray topographic determination of the absence of lateral strains in ion-implanted silicon von Tu, K. N., Chaudhari, P., Lal, K., Crowder, B. L., Tan, S. I.

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Circular etch pits in ion-implanted amorphous silicon films von Tu, K.N., Tan, S.I., Crowder, B.L.

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