Characterization of the effect of growth conditions on a -SiC:H films von Rava, P., Crovini, G., Demichelis, F., Giorgis, F., Pirri, C. F.

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Comparison between methane and acetylene as carbon sources for C-rich a-SiC: H films von Demichelis, F., Crovini, G., Giorgis, F., Pirri, C.F., Tresso, E.

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Uterine myomas: pelviscopic treatment von Andrei, B, Crovini, G, Rosi, A

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Light-soaking in a-SiC:H films grown by PECVD in undiluted and hydrogen diluted SiH4 + CH4 gas mixtures von Fathallah, M., Gharbi, R., Crovini, G., Demichelis, F., Giorgis, F., Pirri, C.F., Tresso, E., Rava, P.

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Optimization of relevant deposition parameters for high quality a-SiC:H films von Demichelis, F., Crovini, G., Pirri, C.F., Tresso, E., Galloni, R., Rizzoli, R., Summonte, C., Rava, P.

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Structural and optoelectronic properties of doped microcrystalline silicon carbide films von Demichelis, F, Crovini, G, Pirri, C F, Tresso, E, Fanclulli, M, Piesarkiewicz, T, Stapinski, T

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Effects of power density and molecule dwell time on compositional and optoelectronic properties of a-SiC : H alloys von Demichelis, F, Crovini, G, Giorgis, F, Pirri, C.F, Tresso, E, Rigato, V, Coscia, U, Ambrosone, G, Catalanotti, S, Rava, P

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Boron and phosphorus doping of a-SiC:H thin films by means of ion implantation von Demichelis, F., Crovini, G., Pirri, C.F., Tresso, E., Galloni, R., Summonte, C., Rizzoli, R., Zignani, F., Rava, P.

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Electronic density of states in a-SiC:H films von Demichelis, F., Crovini, G., Giorgis, F., Pirri, C.F., Tresso, E., Amato, G., Herremans, H., Grevendonk, W., Rava, P.

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Light induced defects in amorphous silicon-carbon alloys a-SiC:H von Rejeb, S.H., Gharbi, R., Fathallaha, M., Demichelis, F., Pirri, C.F., Tresso, E., Crovini, G.

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The influence of hydrogen dilution on the optoelectronic and structural properties of hydrogenated amorphous silicon carbide films von Demichelis, F., Crovini, G., Pirri, C. F., Tresso, E., Galloni, R., Rizzoli, R., Summonte, C., Zignani, F., Rava, P., Madan, A.

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Relations among structural and optoelectronic properties in a-SiC:H films with high C content and high photoconductivity von Leo, G., Galluzzi, G., Guattari, G., Vincenzoni, R., Demichelis, F., Crovini, G., Pirri, C.F., Tresso, E.

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Hydrogen evolution in amorphous silicon carbide von Demichelis, F., Crovini, G., Pirri, C.F., Tresso, E., Giamello, E., DellaMea, G.

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Infrared vibrational spectra of hydrogenated amorphous and microcrystalline silicon-carbon alloys von Demichelis, F., Crovini, G., Pirri, C. F., Tresso, E.

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Optimization of a-Si1−xCx: H films prepared by ultrahigh vacuum plasma enhanced chemical vapour deposition for electroluminescent devices von Demichelis, F., Crovini, G., Pirri, C.F., Tresso, E., Amato, G., Coscia, U., Ambrosone, G., Rava, P.

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Hydrogenated amorphous silicon-nitrogen alloys, a -SiN x :H y : a wide band gap material for optoelectronic devices von Demichelis, F., Crovini, G., Giorgis, F., Pirri, C. F., Tresso, E.

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Light-soaking in a-SiC:H films grown by PECVD in undiluted and hydrogen diluted SiH 4 + CH 4 gas mixtures von Fathallah, M., Gharbi, R., Crovini, G., Demichelis, F., Giorgis, F., Pirri, C.F., Tresso, E., Rava, P.

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Compositional, optoelectronic and structural properties of amorphous silicon-nitrogen alloys deposited by plasma enhanced chemical vapor deposition von Giorgis, F., Rava, P., Galloni, R., Rizzoli, R., Summonte, C., Crovini, G., Demichelis, F., Pirri, C.F., Tresso, E., Rigato, V.

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Optimization of a-Si 1− xC x: H films prepared by ultrahigh vacuum plasma enhanced chemical vapour deposition for electroluminescent devices von Demichelis, F., Crovini, G., Pirri, C.F., Tresso, E., Amato, G., Coscia, U., Ambrosone, G., Rava, P.

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Infrared vibrational spectra of hydrogenated amorphous and microcrystallind silicon-carbon alloys : a comparison of their structure von DEMICHELIS, F, CROVINI, G, PIRRI, C. F, TRESSO, E

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