Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices von Huxtable, Scott T., Abramson, Alexis R., Tien, Chang-Lin, Majumdar, Arun, LaBounty, Chris, Fan, Xiaofeng, Zeng, Gehong, Bowers, John E., Shakouri, Ali, Croke, Edward T.

Volltext

Fabrication and characterization of electrostatic Si∕SiGe quantum dots with an integrated read-out channel von Sakr, M. R., Jiang, H. W., Yablonovitch, E., Croke, E. T.

Volltext

Monolithically integrated multichannel SiGe/Si p-i-n-HBT photoreceiver arrays von Qasaimeh, O., Zhenqiang Ma, Bhattacharya, P., Croke, E.T.

Volltext

High-gain multi-finger power n-MODFET on Si substrate von YUAN, H.-C, JIANG, N, MA, Z, CROKE, E. T

Volltext

Geometric Methods in Inverse Problems and PDE Control von Croke, Chrisopher B, Uhlmann, Gunther, Lasiecka, Irena, Vogelius, Michael

Volltext

High electron mobility in SiGe/Si n -MODFET structures on sapphire substrates von Mueller, C.H., Croke, E.T., Alterovitz, S.A.

Volltext

Partially suppressed shot noise in hopping conduction: observation in SiGe quantum wells von Kuznetsov, VV, Mendez, EE, Zuo, X, Snider, GL, Croke, ET

Volltext

X- and Ku-band amplifiers based on Si/SiGe HBT's and micromachined lumped components von Jae-Sung Rieh, Liang-Hung Lu, Katehi, L.P.B., Bhattacharya, P., Croke, E.T., Ponchak, G.E., Alterovitz, S.A.

Volltext

SiGe-Si quantum-well electroabsorption modulators von Qasaimeh, O., Bhattacharya, P.

Volltext

High mobility SiGe/Si transistor structures on sapphire substrates using ion implantation von Alterovitz, S. A., Mueller, C. H., Croke, E. T.

Volltext

Temperature dependence of Sb-heterostructure millimetre-wave diodes von Schulman, J.N., Holabird, K.S., Chow, D.H., Dunlap, H.L., Thomas, S., Croke, E.T.

Volltext

Reliability of microwave SiGe/Si heterojunction bipolar transistors von Zhenqiang Ma, Bhattacharya, P., Jae-Sung Rieh, Ponchak, G.E., Alterovitz, S.A., Croke, E.T.

Volltext

Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers von Rieh, J.-S., Klotzkin, D., Qasaimeh, O., Lu, L.-H., Yang, K., Katehi, L.P.B., Bhattacharya, P., Croke, E.T.

Volltext

Band offsets in Si/Si1−x−yGexCy heterojunctions measured by admittance spectroscopy von Stein, B. L., Yu, E. T., Croke, E. T., Hunter, A. T., Laursen, T., Bair, A. E., Mayer, J. W., Ahn, C. C.

Volltext

Substitutional C fraction and the influence of C on Si dimer diffusion in Si1−yCy alloys grown on (001) and (118) Si von Croke, E. T., Grosse, F., Vajo, J. J., Gyure, M. F., Floyd, M., Smith, David J.

Volltext

The effect of carbon content on the minority carrier lifetime in lattice-matched p+-Si/ p-SiGeC/ n-Si/ n+-Si diodes von Shivaram, Ramakrishna, Niu, Guofu, Cressler, John D, Croke, Edward T

Volltext

Thermoreflectance imaging of superlattice micro refrigerators von Christofferson, J., Vashaee, D., Shakouri, A., Melese, P., Xiaofeng Fan, Gehong Zeng, Labounty, C., Bowers, J.E., Croke, E.T.

Volltext bestellen

Improved growth morphology of Si–Ge–C heterostructures through the use of Sb surfactant-assisted molecular beam epitaxy von Croke, E.T, Hunter, A.T, Pettersson, P.O, Ahn, C.C, McGill, T.C

Volltext

Measurement of the valence-band offset in strained Si/Ge (100) heterojunctions by x-ray photoelectron spectroscopy von YU, E. T, CROKE, E. T, MCGILL, T. C, MILES, R. H

Volltext

Deep-level transient spectroscopy of Si/Si1−x−yGexCy heterostructures von Stein, B. L., Yu, E. T., Croke, E. T., Hunter, A. T., Laursen, T., Mayer, J. W., Ahn, C. C.

Volltext