Thermal Modeling of High Power GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process von Chu, Kenneth K., Yurovchak, Thomas, Chao, Pane Chane, Creamer, Carlton T.

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Flexible impedance network system von Creamer, Carlton T, Lu, Hong M, Boire, Daniel C, Chu, Kanin, Schmanski, Bernard J

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Method for gallium nitride on diamond semiconductor wafer production von Creamer, Carlton T, Chao, Pane Chane, Chu, Kanin

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METHOD FOR GALLIUM NITRIDE ON DIAMOND SEMICONDUCTOR WAFER PRODUCTION von Creamer, Carlton T, Chao, Pane Chane, Chu, Kanin

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Bias sequencing and switching circuit von Creamer, Carlton T, Creane, Stephen J, Touba, Vali, Bye, Christopher R

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FLEXIBLE IMPEDANCE NETWORK SYSTEM von Creamer, Carlton T, Lu, Hong M, Boire, Daniel C, Chu, Kanin, Schmanski, Bernard J

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BIAS SEQUENCING AND SWITCHING CIRCUIT von Creamer, Carlton T, Creane, Stephen J, Touba, Vali, Bye, Christopher R

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Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz von Pane-Chane Chao, Chu, Kenneth, Creamer, Carlton, Diaz, Jose, Yurovchak, Tom, Shur, Michael, Kallaher, Ray, McGray, Craig, Via, Glen David, Blevins, John D.

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0.1-[Formula Omitted] InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess von Xu, Dong, Chu, Kanin, Diaz, Jose A, Ashman, Michael D, Komiak, J J, Mt Pleasant, Louis M, Vera, Alice, Seekell, Philip, Yang, Xiaoping, Creamer, Carlton, Nichols, K B, Duh, K H George, Smith, Phillip M, Chao, P C, Lin, Dong, Ye, Peide D

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0.1- \mu \text InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess von Dong Xu, Kanin Chu, Diaz, Jose A., Ashman, Michael D., Komiak, J. J., Mt Pleasant, Louis M., Vera, Alice, Seekell, Philip, Xiaoping Yang, Creamer, Carlton, Nichols, K. B., Duh, K. H. George, Smith, Phillip M., Chao, P. C., Lin Dong, Ye, Peide D.

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