Highly nonlinear defect-induced carrier recombination rates in semiconductors von Modine, N. A., Armstrong, A. M., Crawford, M. H., Chow, W. W.

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The Influence of Al Composition on Point Defect Incorporation in AlGaN von Armstrong, Andrew, Henry, Tania Alicia, Allerman, Andrew A., Crawford, Mary Hagerott

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Influence of Growth Temperature on AlGaN Multi-Quantum Well Point Defect Incorporation and Photoluminescence Efficiency von Armstrong, Andrew, Allerman, Andrew A., Crawford, Mary Hagerott, Henry, Tania A.

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Relaxation of compressively-strained AlGaN by inclined threading dislocations von Follstaedt, D. M., Lee, S. R., Provencio, P. P., Allerman, A. A., Floro, J. A., Crawford, M. H.

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Mid-ultraviolet light-emitting diode detects dipicolinic acid von Bogart, Katherine Huderle Andersen, Lee, Stephen Roger, Temkin, Henryk, Crawford, Mary Hagerott, Dasgupta, Purnendu K., Li, Qingyang, Allerman, Andrew Alan, Fischer, Arthur Joseph

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Minimization of threshold current in short wavelength AlGaInP vertical-cavity surface-emitting lasers von Chow, W.W., Crawford, M.H., Schneider, R.P.

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