SiGe-channel heterojunction p-MOSFET's von Verdonckt-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C., Johnson, J.B.

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An epitaxial emitter-cap SiGe-base bipolar technology optimized for liquid-nitrogen temperature operation von Cressler, J.D., Crabbe, E.F., Comfort, J.H., Sun, J.Y.-C., Stork, J.M.C.

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Current gain rolloff in graded-base SiGe heterojunction bipolar transistors von Crabbe, E.F., Cressler, J.D., Patton, G.L., Stork, J.M., Comfort, J.H., Sun, J.Y.-C.

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Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's von Zanoni, E., Crabbe, E.F., Stork, J.M.C., Pavan, P., Verzellesi, G., Vendrame, L., Canali, C.

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High-low polysilicon-emitter SiGe-base bipolar transistors von Crabbe, E.F., Comfort, J.H., Cressler, J.D., Sun, J.Y.-C., Stork, J.M.C.

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Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors von Cressler, J.D., Comfort, J.H., Crabbe, E.F., Patton, G.L., Lee, W., Sun, J.Y., Stork, J.M.C., Meyerson, B.S.

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Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits von Harame, D.L., Comfort, J.H., Cressler, J.D., Crabbe, E.F., Sun, J.Y.-C., Meyerson, B.S., Tice, T.

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On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues von Cressler, J.D., Crabbe, E.F., Comfort, J.H., Stork, J.M.C., Sun, J.Y.-C.

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On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations von Cressler, J.D., Comfort, J.H., Crabbe, E.F., Patton, G.L., Stork, J.M.C., Sun, J.Y.-C., Meyerson, B.S.

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Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique von Burghartz, J.N., Warnock, J., Cressler, J.D., Stanis, C.L., McIntosh, R.C., Sun, J.Y.-C., Comfort, J.H., Stork, J.M.C., Jenkins, K.A., Crabbé, E.F., Lee, W., Gilbert, M.

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Si/SiGe epitaxial-base transistors. II. Process integration and analog applications von Harame, D.L., Comfort, J.H., Cressler, J.D., Crabbe, E.F., Sun, J.Y.-C., Meyerson, B.S., Tice, T.

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Si/Si/sub 1-x/Ge/sub x/ valence band discontinuity measurements using a semiconductor-insulator-semiconductor (SIS) heterostructure von Gan, C.H., del Alamo, J.A., Bennett, B.R., Meyerson, B.S., Crabbe, E.F., Sodini, C.G., Reif, L.R.

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Low-temperature operation of SiGe p-n-p HBTs von Crabbe, E.F., Harame, D.L., Meyerson, B.S., Stork, J.M.C., Sun, J.Y.-C.

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Narrow band gap base heterojunction bipolar transistors using SiGe alloys von Iyer, S.S., Patton, G.L., Harame, D.L., Stork, J.M.C., Crabbé, E.F., Meyerson, B.S.

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On the leverage of high-f/sub T/ transistors for advanced high-speed bipolar circuits von Chuang, C.T., Chin, K., Stork, J.M.C., Patton, G.L., Crabbe, E.F., Comfort, J.H.

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High-mobility modulation-doped SiGe-channel p-MOSFETs von Verdonckt-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C., Megdanis, A.C., Stanis, C.L., Bright, A.A., Kroesen, G.M.W., Warren, A.C.

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73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters von Crabbe, E.F., Comfort, J.H., Lee, W., Cressler, J.D., Meyerson, B.S., Megdanis, A.C., Sun, J.Y.-C., Stork, J.M.C.

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75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors von Patton, G.L., Comfort, J.H., Meyerson, B.S., Crabbe, E.F., Scilla, G.J., de Fresart, E., Stork, J.M.C., Sun, J.Y.-C., Harame, D.L., Burghartz, J.N.

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Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors von Crabbe, E.F., Meyerson, B.S., Stork, J.M.C., Harame, D.L.

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An epitaxial emitter cap, SiGe-base bipolar technology with 22 ps ECL gate delay at liquid nitrogen temperature von Cressler, J.D., Comfort, J.H., Crabbe, E.F., Sun, J.Y.-C., Stork, J.M.C.

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