Spin-Hall-assisted magnetic random access memory von van den Brink, A., Cosemans, S., Cornelissen, S., Manfrini, M., Vaysset, A., Van Roy, W., Min, T., Swagten, H. J. M., Koopmans, B.

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OxRRAM-Based Analog in-Memory Computing for Deep Neural Network Inference: A Conductance Variability Study von Doevenspeck, J., Degraeve, R., Fantini, A., Cosemans, S., Mallik, A., Debacker, P., Verkest, D., Lauwereins, R., Dehaene, W.

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IGZO-Based Compute Cell for Analog In-Memory Computing-DTCO Analysis to Enable Ultralow-Power AI at Edge von Saito, D., Doevenspeck, J., Cosemans, S., Oh, H., Perumkunnil, M., Papistas, I. A., Belmonte, A., Rassoul, N., Delhougne, R., Kar, G., Debacker, P., Mallik, A., Verkest, D., Na, M. H.

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The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance von Martens, K., Radu, I. P., Mertens, S., Shi, X., Nyns, L., Cosemans, S., Favia, P., Bender, H., Conard, T., Schaekers, M., De Gendt, S., Afanas'ev, V., Kittl, J. A., Heyns, M., Jurczak, M.

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A 3.6 pJ/Access 480 MHz, 128 kb On-Chip SRAM With 850 MHz Boost Mode in 90 nm CMOS With Tunable Sense Amplifiers von Cosemans, S., Dehaene, W., Catthoor, F.

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A Low-Power Embedded SRAM for Wireless Applications von Cosemans, S., Dehaene, W., Catthoor, F.

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A low leakage 500 MHz 2T embedded dynamic memory with integrated semi-transparent refresh von VIGNON, A, COSEMANS, S, MAEX, K, DEHAENE, W

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Time and workload dependent device variability in circuit simulations von Rodopoulos, D, Mahato, S B, de Almeida Camargo, V V, Kaczer, B, Catthoor, F, Cosemans, S, Groeseneken, G, Papanikolaou, A, Soudris, D

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OxRRAM-Based Analog in-Memory Computing for Deep Neural Network Inference: A Conductance Variability Study von Doevenspeck, J, Degraeve, R, Fantini, A, Cosemans, S, Mallik, A, Debacker, P, Verkest, D, Lauwereins, R, Dehaene, W

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A 65 nm, 850 MHz, 256 kbit, 4.3 pJ/access, Ultra Low Leakage Power Memory Using Dynamic Cell Stability and a Dual Swing Data Link von Rooseleer, B., Cosemans, S., Dehaene, W.

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Consensus report on markers to distinguish procoagulant platelets from apoptotic platelets: communication from the Scientific and Standardization Committee of the ISTH von Josefsson, Emma C., Ramström, Sofia, Thaler, Johannes, Lordkipanidzé, Marie, Agbani, Ejaife O., Alberio, Lorenzo, Bakchoul, Tamam, Bouchard, Beth A., Camera, Marina, Chen, Vivien, Cognasse, Fabrice, Cosemans, Judith M.E.M., Dave, Rutvi G., Denorme, Frederik, Faille, Dorothée, Goodall, Alison H., Harper, Matthew T., Heemskerk, Johan, Jobe, Shawn M., Johnson, Lacey, Kholmukhamedov, Andaleb, Mandal, Saptarshi, Kannan, Meganathan, Mezzano, Diego, Mutch, Nicola, Rand, Margaret L., Roka-Moiia, Yana, Tersteeg, Claudia, Thomas, Kimberly A., Vara, Dina, Yuan, Yuping

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On-chip optical interconnects versus electrical interconnects for high-performance applications von Stucchi, Michele, Cosemans, Stefan, Van Campenhout, Joris, Tőkei, Zsolt, Beyer, Gerald

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A 4.4 pJ/Access 80 MHz, 128 kbit Variability Resilient SRAM With Multi-Sized Sense Amplifier Redundancy von Sharma, V., Cosemans, S., Ashouei, M., Huisken, J., Catthoor, F., Dehaene, W.

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Ultra Low-Energy SRAM Design for Smart Ubiquitous Sensors von Sharma, V., Cosemans, S., Ashouie, M., Huisken, J., Catthoor, F., Dehaene, W.

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A low leakage 500ANBMHz 2T embedded dynamic memory with integrated semi-transparent refresh von Vignon, A, Cosemans, S, Maex, K, Dehaene, W

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A low leakage 500MHz 2T embedded dynamic memory with integrated semi-transparent refresh von Vignon, A., Cosemans, S., Maex, K., Dehaene, W.

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A 65 nm, 850 MHz, 256 kbit, 4.3 pJ/access, ultra low leakage power memory using dynamic cell stability and a dual swing data link von Rooseleer, B, Cosemans, S, Dehaene, W

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A 65 nm, 850 MHz, 256 kbit, 4.3 pJ/access, ultra low leakage power memory using dynamic cell stability and a dual swing data link von Rooseleer, B., Cosemans, S., Dehaene, W.

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Als de politieke wil er is, kunnen we deze vluchtelingenbeweging aan von Vankersschaever, Sarah

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Modeling RRAM set/reset statistics resulting in guidelines for optimized operation von Degraeve, R., Fantini, A., Raghavan, N., Chen, Y. Y., Goux, L., Clima, S., Cosemans, S., Govoreanu, B., Wouters, D. J., Roussel, Ph, Kar, G. S., Groeseneken, G., Jurczak, M.

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