Semiconducting Graphene from Highly Ordered Substrate Interactions von Nevius, M S, Conrad, M, Wang, F, Celis, A, Nair, M N, Taleb-Ibrahimi, A, Tejeda, A, Conrad, E H

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The growth and morphology of epitaxial multilayer graphene von Hass, J, de Heer, W A, Conrad, E H

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First direct observation of a nearly ideal graphene band structure von Sprinkle, M, Siegel, D, Hu, Y, Hicks, J, Tejeda, A, Taleb-Ibrahimi, A, Le Fèvre, P, Bertran, F, Vizzini, S, Enriquez, H, Chiang, S, Soukiassian, P, Berger, C, de Heer, W A, Lanzara, A, Conrad, E H

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Why multilayer graphene on 4H-SiC(0001[over ]) behaves like a single sheet of graphene von Hass, J, Varchon, F, Millán-Otoya, J E, Sprinkle, M, Sharma, N, de Heer, W A, Berger, C, First, P N, Magaud, L, Conrad, E H

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Electronic structure of epitaxial graphene layers on SiC: effect of the substrate von Varchon, F, Feng, R, Hass, J, Li, X, Nguyen, B Ngoc, Naud, C, Mallet, P, Veuillen, J-Y, Berger, C, Conrad, E H, Magaud, L

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A wide-bandgap metal–semiconductor–metal nanostructure made entirely from graphene von Hicks, J., Tejeda, A., Taleb-Ibrahimi, A., Nevius, M. S., Wang, F., Shepperd, K., Palmer, J., Bertran, F., Le Fèvre, P., Kunc, J., de Heer, W. A., Berger, C., Conrad, E. H.

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High Layer Uniformity of Two-Dimensional Materials Demonstrated Surprisingly from Broad Features in Surface Electron Diffraction von Chen, S, Horn von Hoegen, M, Thiel, P. A, Kaminski, A, Schrunk, B, Speliotis, T, Conrad, E. H, Tringides, M. C

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The Bottom-up Growth of Edge Specific Graphene Nanoribbons von Nevius, M. S, Wang, F, Mathieu, C, Barrett, N, Sala, A, Menteş, T. O, Locatelli, A, Conrad, E. H

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Revealing interfacial disorder at the growth-front of thick many-layer epitaxial graphene on SiC: a complementary neutron and X-ray scattering investigation von Mazza, A. R, Miettinen, A, Daykin, A. A, He, X, Charlton, T. R, Conrad, M, Guha, S, Lu, Q, Bian, G, Conrad, E. H, Miceli, P. F

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Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC von Wang, F, Liu, G, Rothwell, S, Nevius, M, Tejeda, A, Taleb-Ibrahimi, A, Feldman, L. C, Cohen, P. I, Conrad, E. H

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Structure and evolution of semiconducting buffer graphene grown on SiC(0001) von Conrad, M., Rault, J., Utsumi, Y., Garreau, Y., Vlad, A., Coati, A., Rueff, J.-P., Miceli, P. F., Conrad, E. H.

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Graphene nanoribbons: fabrication, properties and devices von Celis, A, Nair, M N, Taleb-Ibrahimi, A, Conrad, E H, Berger, C, de Heer, W A, Tejeda, A

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Edge states and ballistic transport in zigzag graphene ribbons: The role of SiC polytypes von Miettinen, A. L., Nevius, M. S., Ko, W., Kolmer, M., Li, A.-P., Nair, M. N., Kierren, B., Moreau, L., Conrad, E. H., Tejeda, A.

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Electronic structure of epitaxial graphene grown on the C-face of SiC and its relation to the structure von Tejeda, A, Taleb-Ibrahimi, A, de Heer, W, Berger, C, Conrad, E H

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Highly ordered graphene for two dimensional electronics von Hass, J., Feng, R., Li, T., Li, X., Zong, Z., de Heer, W. A., First, P. N., Conrad, E. H., Jeffrey, C. A., Berger, C.

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The structure of graphene grown on the SiC surface von Hicks, J, Shepperd, K, Wang, F, Conrad, E H

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Influence of quantum size effects on island coarsening von Jeffrey, C A, Conrad, E H, Feng, R, Hupalo, M, Kim, C, Ryan, P J, Miceli, P F, Tringides, M C

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High island densities and long range repulsive interactions: Fe on epitaxial graphene von Binz, S M, Hupalo, M, Liu, Xiaojie, Wang, C Z, Lu, Wen-Cai, Thiel, P A, Ho, K M, Conrad, E H, Tringides, M C

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Graphene investigated by synchrotron radiation von Hicks, J., Conrad, E.H.

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Silicon intercalation into the graphene-SiC interface von Wang, F., Shepperd, K., Hicks, J., Nevius, M. S., Tinkey, H., Tejeda, A., Taleb-Ibrahimi, A., Bertran, F., Le Fèvre, P., Torrance, D. B., First, P. N., de Heer, W. A., Zakharov, A. A., Conrad, E. H.

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