Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates von Du, Wei, Zhou, Yiyin, Ghetmiri, Seyed A., Mosleh, Aboozar, Conley, Benjamin R., Nazzal, Amjad, Soref, Richard A., Sun, Greg, Tolle, John, Margetis, Joe, Naseem, Hameed A., Yu, Shui-Qing

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Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx von Du, Wei, Ghetmiri, Seyed A., Conley, Benjamin R., Mosleh, Aboozar, Nazzal, Amjad, Soref, Richard A., Sun, Greg, Tolle, John, Margetis, Joe, Naseem, Hameed A., Yu, Shui-Qing

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Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence von Ghetmiri, Seyed Amir, Du, Wei, Margetis, Joe, Mosleh, Aboozar, Cousar, Larry, Conley, Benjamin R., Domulevicz, Lucas, Nazzal, Amjad, Sun, Greg, Soref, Richard A., Tolle, John, Li, Baohua, Naseem, Hameed A., Yu, Shui-Qing

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Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection von Conley, Benjamin R, Mosleh, Aboozar, Ghetmiri, Seyed Amir, Du, Wei, Soref, Richard A, Sun, Greg, Margetis, Joe, Tolle, John, Naseem, Hameed A, Yu, Shui-Qing

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Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4  μ m long-wavelength cutoff von Conley, Benjamin R., Margetis, Joe, Du, Wei, Tran, Huong, Mosleh, Aboozar, Ghetmiri, Seyed Amir, Tolle, John, Sun, Greg, Soref, Richard, Li, Baohua, Naseem, Hameed A., Yu, Shui-Qing

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Material Characterization of Ge1−x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications von Mosleh, Aboozar, Ghetmiri, Seyed Amir, Conley, Benjamin R., Hawkridge, Michael, Benamara, Mourad, Nazzal, Amjad, Tolle, John, Yu, Shui-Qing, Naseem, Hameed A.

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Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection von Conley, Benjamin R., Mosleh, Aboozar, Ghetmiri, Seyed Amir, Du, Wei, Soref, Richard A., Sun, Greg, Margetis, Joe, Tolle, John, Naseem, Hameed A., Yu, Shui-Qing

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Material Characterization of Ge1−xSnx Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications von Mosleh, Aboozar, Ghetmiri, Seyed Amir, Conley, Benjamin R., Hawkridge, Michael, Benamara, Mourad, Nazzal, Amjad, Tolle, John, Yu, Shui-Qing, Naseem, Hameed A.

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Investigation of Growth Mechanism and Role of H 2 in Very Low Temperature Si Epitaxy von Mosleh, Aboozar, Ghetmiri, Seyed Amir, Conley, Benjamin R, Abu-Safe, Husam Hamza, Benamara, Mourad, Waqar, Zafar, El-Ghazaly, Samir, Yu, Shui-Qing, Naseem, Hameed A

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Investigation of Growth Mechanism and Role of H2 in Very Low Temperature Si Epitaxy von Mosleh, Aboozar, Ghetmiri, Seyed Amir, Conley, Benjamin R, Abu-Safe, Husam Hamza, Benamara, Mourad, Waqar, Zafar, El-Ghazaly, Samir, Yu, Shui-Qing, Naseem, Hameed A

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Investigation on the Formation and Propagation of Defects in GeSn Thin Films von Mosleh, Aboozar, Benamara, Mourad, Ghetmiri, Seyed Amir, Conley, Benjamin R, Alher, Murtadha Abdulmueen, Du, Wei, Sun, Greg, Soref, Richard, Margetis, Joe, Tolle, John, Yu, Shui-Qing, Naseem, Hameed A

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Growth and Characterization of Epitaxial Ge1-XSnx Alloys and Heterostructures Using a Commercial CVD System von Margetis, Joe, Ghetmiri, Seyed Amir, Du, Wei, Conley, Benjamin R, Mosleh, Aboozar, Soref, Richard, Sun, Greg, Domulevicz, Lucas, Naseem, Hameed A, Yu, Shui-Qing, Tolle, John

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Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon von Ghetmiri, Seyed Amir, Du, Wei, Conley, Benjamin R., Mosleh, Aboozar, Nazzal, Amjad, Sun, Greg, Soref, Richard A., Margetis, Joe, Tolle, John, Naseem, Hameed A., Yu, Shui-Qing

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Material Characterization of Ge^sub 1-x^Sn^sub x^ Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications von Mosleh, Aboozar, Ghetmiri, Seyed Amir, Conley, Benjamin R, Hawkridge, Michael, Benamara, Mourad, Nazzal, Amjad, Tolle, John, Yu, Shui-qing, Naseem, Hameed A

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Growth and Characterization of Epitaxial Ge 1-X Sn x Alloys and Heterostructures Using a Commercial CVD System von Margetis, Joe, Ghetmiri, Seyed Amir, Du, Wei, Conley, Benjamin R, Mosleh, Aboozar, Soref, Richard, Sun, Greg, Domulevicz, Lucas, Naseem, Hameed A, Yu, Shui-Qing, Tolle, John

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Stability of Pseudomorphic and Compressively Strained Ge 1-X Sn x Thin Films under Rapid Thermal Annealing von Conley, Benjamin R, Mosleh, Aboozar, Ghetmiri, Seyed Amir, Du, Wei, Sun, Greg, Soref, Richard, Margetis, Joe, Tolle, John, Naseem, Hameed A, Yu, Shui-Qing

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Stability of Pseudomorphic and Compressively Strained Ge1-XSnx Thin Films under Rapid Thermal Annealing von Conley, Benjamin R, Mosleh, Aboozar, Ghetmiri, Seyed Amir, Du, Wei, Sun, Greg, Soref, Richard, Margetis, Joe, Tolle, John, Naseem, Hameed A, Yu, Shui-Qing

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High efficiency MJ solar cells and TPV using SiGeSn materials von Conley, B. R., Naseem, H., Sun, G., Sharps, P., Shui-Qing Yu

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Electronic up-conversions of a scene using a pixelated detector array von Conley, Benjamin R

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Metamaterial photocathode for detection and imaging of infrared radiation von Conley, Benjamin R

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