Effect of high temperature deposition on CoSi2 phase formation von Comrie, CM, Ahmed, H, Smeets, D, Demeulemeester, J, Turner, S, Van Tendeloo, G, Detavernier, Christophe, Vantomme, A

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On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction von Schrauwen, A, Demeulemeester, J, Kumar, A, Vandervorst, W, Comrie, CM, Detavernier, Christophe, Temst, K, Vantomme, A

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On the growth kinetics of Ni(Pt) silicide thin films von Demeulemeester, J, Smeets, D, Comrie, CM, Barradas, NP, Vieira, A, Van Bockstael, Charlotte, Detavernier, Christophe, Temst, K, Vantomme, A

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In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100) von Demeulemeester, J, Knaepen, Werner, Smeets, D, Schrauwen, A, Comrie, CM, Barradas, NP, Vieira, A, Detavernier, Christophe, Temst, K, Vantomme, A

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Sn diffusion during Ni germanide growth on Ge1-xSnx von Demeulemeester, J, Schrauwen, A, Nakatsuka, O, Zaima, S, Adachi, M, Shimura, Y, Comrie, CM, Fleischmann, C, Detavernier, Christophe, Temst, K, Vantomme, A

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Metastable iron silicide phase formation by pulsed laser annealing von Comrie, C. M., Falepin, A., Richard, O., Bender, H., Vantomme, A.

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Microstructure, optical characterization and light induced degradation in a-Si:H deposited at different temperatures von Minani, E., Sigcau, Z., Adgebite, O., Ramukosi, F.L., Ntsoane, T.P., Harindintwari, S., Knoesen, D., Comrie, C.M., Britton, D.T., Härting, M.

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Light induced changes in the defect structure of a-Si:H von Britton, D.T., Sigcau, Z., Comrie, C.M., Kanguwe, D.F., Minani, E., Knoesen, D., Härting, M.

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Real-time ERD analysis of hydrogen retention in silicon during ramped thermal anneal von Meyer, K.A., Comrie, C.M., Theron, C.

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Study of Pt/Ge interaction in a lateral diffusion couple by microbeam Rutherford backscattering spectrometry von Nemutudi, R.S, Comrie, C.M, Churms, C.L

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Study of concentration variations in the metastable [CsCl]Fe1-xSi phase von FALEPIN, A, COMRIE, C. M, COTTENIER, S, VANTOMME, A

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Dominant diffusing species during cobalt silicide formation von Comrie, C. M., Newman, R. T.

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Reply to “Comment on ‘Dominant diffusing species during cobalt silicide formation’ ” [J. Appl. Phys. 87 , 8216 (2000)] von Comrie, C. M., Newman, R. T.

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Phase formation in Cu-Si and Cu-Ge von HONG, S. Q, COMRIE, C. M, RUSSELL, S. W, MAYER, J. W

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Growth Temperature, Microstructural Differences and Light-Induced Changes in a-Si:H Deposited on Glass Substrates von Knoesen, D., Härting, M., Britton, D.T., Ntsoane, T.P., Sigcau, Z., Comrie, C.M., Minani, E.

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Diffusing species and growth interfaces during cobalt disilicide formation von Comrie, C.M.

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Study of Pd/Ge interaction in a lateral diffusion couple by microbeam Rutherford backscattering spectrometry von Churms, C.L, Comrie, C.M, Nemutudi, R.S

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Interpreting Mössbauer spectra reflecting an infinite number of sites : an application to Fe1-xSi synthesized by pulsed laser annealing von Falepin, A, Cottenier, Stefaan, Comrie, CM, Vantomme, A

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Marker and radioactive silicon tracer studies of PtSi formation von MCLEOD, J. E, WANDT, M. A. E, PRETORIUS, R, COMRIE, C. M

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Formation of Y1Ba2Cu3O7-x thin films by pulsed ruby laser ablation von Naidoo, R, Pretorius, R, Comrie, C M

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