A method for rigid body expansion measurement in the presence of secondary grain boundary dislocations applied to a SrTiO3 near- I pound sterling 3 ( 1 1 2 ) grain boundary von Dudeck, K J, Cockayne, DJH

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Bulk Nanocrystalline Fe3Al-Based Material Prepared by Aluminothermic Reaction von La, P., Yang, J., Cockayne, D. J. H., Liu, W., Xue, Q., Li, Y.

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Alloyed Ge(Si)/Si(001) islands : The composition profile and the shape transformation von LANG, C, COCKAYNE, D. J. H, NGUYEN-MANH, D

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Three-dimensional organization of rare-earth atoms at grain boundaries in silicon nitride von Winkelman, Graham B., Dwyer, Christian, Hudson, Toby S., Nguyen-Manh, Duc, Döblinger, Markus, Satet, Raphaelle L., Hoffmann, Michael J., Cockayne, David J. H.

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A versatile double aberration-corrected, energy filtered HREM/STEM for materials science von Hutchison, John L., Titchmarsh, John M., Cockayne, David J.H., Doole, Ron C., Hetherington, Crispin J.D., Kirkland, Angus I., Sawada, H.

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Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots von Leon, R., Kim, Yong, Jagadish, C., Gal, M., Zou, J., Cockayne, D. J. H.

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The structure of nanovolumes of amorphous materials von McBride, W., Cockayne, D.J.H.

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Inhibited carrier transfer in ensembles of isolated quantum dots von Lobo, C., Leon, R., Marcinkevic̆ius, S., Yang, W., Sercel, P. C., Liao, X. Z., Zou, J., Cockayne, D. J. H.

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Self-assembled periodical polycrystalline-ZnO/a-C nanolayers on Zn nanowire von Li, Quan, Kwong, K W, Ozkaya, D, Cockayne, D J H

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Local structure variations in Al sub(8) sub(9)La sub(6)Ni sub(5) metallic glass von Li, G, Borisenko, K B, Chen, Y, Nguyen-Manh, D, Ma, E, Cockayne, DJH

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Ion-implantation-induced extended defect formation in (0001) and (11(2)over-bar0) 4H-SiC von Wong-Leung, J., Linnarsson, Margareta K., Svensson, B. G., Cockayne, D. J. H.

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Electron energy loss spectra of C 60 and C 70 fullerenes von Lee, S.M., Nicholls, R.J., Nguyen-Manh, D., Pettifor, D.G., Briggs, G.A.D., Lazar, S., Pankhurst, D.A., Cockayne, D.J.H.

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Ion implantation in 4H–SiC von Wong-Leung, J., Janson, M.S., Kuznetsov, A., Svensson, B.G., Linnarsson, M.K., Hallén, A., Jagadish, C., Cockayne, D.J.H.

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Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands von Liao, X. Z., Zou, J., Cockayne, D. J. H., Jiang, Z. M., Wang, X., Leon, R.

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Nonuniform alloying in Ge(Si)/Si(001) quantum dots von Lang, Christian, Nguyen-Manh, Duc, Cockayne, David J. H.

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Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si (001) island growth von Zou, J., Liao, X. Z., Cockayne, D. J. H., Jiang, Z. M.

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Interfacial structure in silicon nitride sintered with lanthanide oxide von DWYER, C, ZIEGLER, A, COCKAYNE, D. J. H, RITCHIE, R. O, PENNYCOOK, S. J, SHIBATA, N, WINKELMAN, G. B, SATET, R. L, HOFFMANN, M. J, CINIBULK, M. K, BECHER, P. F, PAINTER, G. S, BROWNING, N. D

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Damage to epitaxial GaN layers by silicon implantation von Tan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J., Stall, R. A.

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Structural and compositional comparison of Si3N4 ceramics with different fracture modes von Döblinger, M., Winkelman, G.B., Dwyer, C., Marsh, C., Kirkland, A.I., Cockayne, D.J.H., Hoffmann, M.J.

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Electrical and structural analysis of high-dose Si implantation in GaN von Zolper, J. C., Tan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J., Crawford, M. Hagerott, Karlicek, R. F.

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