Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga2O3 (001) substrates von Jian, Zhe (Ashley), Clymore, Christopher J, Sun, Kai, Mishra, Umesh, Ahmadi, Elaheh

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N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning von Collins, Henry, Akso, Emre, Clymore, Christopher J., Khan, Kamruzzaman, Hamwey, Robert, Hatui, Nirupam, Guidry, Matthew, Keller, Stacia, Mishra, Umesh K.

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HfO2 as gate insulator on N-polar GaN-AlGaN heterostructures von Clymore, Christopher J, Mohanty, Subhajit, Jian, Zhe (Ashley), Krishna, Athith, Keller, Stacia, Ahmadi, Elaheh

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Electrical and Structural Analysis of β‐Ga2O3/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer von Jian, Zhe (A.), Sun, Kai, Kosanovic, Stefan, Clymore, Christopher J., Mishra, Umesh, Ahmadi, Elaheh

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N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated Pout at 94 GHz von Collins, Henry, Akso, Emre, Clymore, Christopher J., Khan, Kamruzzaman, Hamwey, Robert, Hatui, Nirupam, Guidry, Matthew, Keller, Stacia, Mishra, Umesh K.

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N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz von Collins, Henry, Akso, Emre, Hatui, Nirupam, Clymore, Christopher J., Wurm, Christian, Hamwey, Robert, Guidry, Matthew, Keller, Stacia, Mishra, Umesh K.

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Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs von Li, Weiyi, Romanczyk, Brian, Guidry, Matthew, Akso, Emre, Hatui, Nirupam, Wurm, Christian, Liu, Wenjian, Shrestha, Pawana, Collins, Henry, Clymore, Christopher, Keller, Stacia, Mishra, Umesh K.

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N‐polar deep‐recess GaN MISHEMT with enhanced f t ·L G by gate dielectric thinning von Collins, Henry, Akso, Emre, Clymore, Christopher J., Khan, Kamruzzaman, Hamwey, Robert, Hatui, Nirupam, Guidry, Matthew, Keller, Stacia, Mishra, Umesh K.

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First Demonstration of an N-Polar InAlGaN/GaN HEMT von Hamwey, Robert, Hatui, Nirupam, Akso, Emre, Wu, Feng, Clymore, Christopher, Keller, Stacia, Speck, James S., Mishra, Umesh K.

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HfO 2 as gate insulator on N-polar GaN-AlGaN heterostructures von Clymore, Christopher J., Mohanty, Subhajit, Jian, Zhe (Ashley), Krishna, Athith, Keller, Stacia, Ahmadi, Elaheh

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Electrical and Structural Analysis of β ‐Ga 2 O 3 /GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer von Jian, Zhe (A.), Sun, Kai, Kosanovic, Stefan, Clymore, Christopher J., Mishra, Umesh, Ahmadi, Elaheh

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N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P out at 94 GHz von Collins, Henry, Akso, Emre, Clymore, Christopher J., Khan, Kamruzzaman, Hamwey, Robert, Hatui, Nirupam, Guidry, Matthew, Keller, Stacia, Mishra, Umesh K.

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First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz von Akso, Emre, Collins, Henry, Clymore, Christopher, Li, Weiyi, Guidry, Matthew, Romanczyk, Brian, Wurm, Christian, Liu, Wenjian, Hatui, Nirupam, Hamwey, Robert, Shrestha, Pawana, Keller, Stacia, Mishra, Umesh K.

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Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz von Akso, Emre, Li, Weiyi, Clymore, Christopher, O'Malley, Everett, Guidry, Matthew, Kim, Justin, Romanczyk, Brian, Collins, Henry, Wang, Boyu, Wurm, Christian, Hatui, Nirupam, Keller, Stacia, Buckwalter, James F., Mishra, Umesh K.

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Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz von Akso, Emre, Collins, Henry, Khan, Kamruzzaman, Wang, Boyu, Li, Weiyi, Clymore, Christopher, Kayede, Emmanuel, Liu, Wenjian, Chavan, Tanmay, Hamwey, Robert, Hatui, Nirupam, Guidry, Matthew, Romanczyk, Brian, Keller, Stacia, Mishra, Umesh K.

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