Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts von Clinton, Evan A., Vadiee, Ehsan, Shen, Shyh-Chiang, Mehta, Karan, Yoder, P. Douglas, Doolittle, W. Alan

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Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN von Gunning, Brendan P., Fabien, Chloe A. M., Merola, Joseph J., Clinton, Evan A., Doolittle, W. Alan, Wang, Shuo, Fischer, Alec M., Ponce, Fernando A.

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Thermal conductance across harmonic-matched epitaxial Al-sapphire heterointerfaces von Cheng, Zhe, Koh, Yee Rui, Ahmad, Habib, Hu, Renjiu, Shi, Jingjing, Liao, Michael E., Wang, Yekan, Bai, Tingyu, Li, Ruiyang, Lee, Eungkyu, Clinton, Evan A., Matthews, Christopher M., Engel, Zachary, Yates, Luke, Luo, Tengfei, Goorsky, Mark S., Doolittle, W. Alan, Tian, Zhiting, Hopkins, Patrick E., Graham, Samuel

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Evaluating the performance of InGaN/GaN multi-quantum-well solar cells operated at elevated temperatures via DC and small-signal AC analysis von Vadiee, Ehsan, Fischer, Alec M., Clinton, Evan A., McFavilen, Heather, Patadia, Arshey, Arena, Chantal, Ponce, Fernando A., King, Richard R., Honsberg, Christiana B., Doolittle, William A.

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Controlling surface adatom kinetics for improved structural and optical properties of high indium content aluminum indium nitride von Engel, Zachary, Clinton, Evan A., Matthews, Christopher M., Doolittle, W. Alan

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Adlayer control for tunable AlGaN self-assembled superlattices von Engel, Zachary, Clinton, Evan A., Motoki, Keisuke, Ahmad, Habib, Matthews, Christopher M., Doolittle, W. Alan

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Comprehensive Analysis of Metal Modulated Epitaxial GaN von Ahmad, Habib, Motoki, Keisuke, Clinton, Evan A, Matthews, Christopher M, Engel, Zachary, Doolittle, W. Alan

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Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance von Clinton, Evan A., Engel, Zachary, Vadiee, Ehsan, Carpenter, Joe V., Holman, Zachary C., Doolittle, W. Alan

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Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices von Ahmad, Habib, Anderson, Travis J., Gallagher, James C., Clinton, Evan A., Engel, Zachary, Matthews, Christopher M., Alan Doolittle, W.

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Observation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy von Clinton, Evan A., Vadiee, Ehsan, Tellekamp, M. Brooks, Doolittle, W. Alan

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Publisher’s Note: “Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices” [J. Appl. Phys 127, 215703 (2020)] von Ahmad, Habib, Anderson, Travis J., Gallagher, James C., Clinton, Evan A., Engel, Zachary, Matthews, Christopher M., Alan Doolittle, W.

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Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9  μ m/h by plasma-assisted molecular beam epitaxy von Gunning, Brendan P., Clinton, Evan A., Merola, Joseph J., Doolittle, W. Alan, Bresnahan, Rich C.

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The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance von Vadiee, Ehsan, Clinton, Evan A., Carpenter, Joe V., McFavilen, Heather, Arena, Chantal, Holman, Zachary C., Honsberg, Christiana B., Doolittle, W. Alan

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A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions von Clinton, Evan A., Vadiee, Ehsan, Fabien, Chloe A.M., Moseley, Michael W., Gunning, Brendan P., Doolittle, W. Alan, Fischer, Alec M., Wei, Yong O., Xie, Hongen, Ponce, Fernando A.

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Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance von Clinton, Evan A., Engel, Zachary, Vadiee, Ehsan, Carpenter, Joe V., Holman, Zachary C., Doolittle, W. Alan

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Observation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy von Clinton, Evan A., Vadiee, Ehsan, Tellekamp, M. Brooks, Doolittle, W. Alan

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Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts von Clinton, Evan A., Vadiee, Ehsan, Shen, Shyh-Chiang, Mehta, Karan, Yoder, P. Douglas, Doolittle, W. Alan

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The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance von Vadiee, Ehsan, Clinton, Evan A., Carpenter, Joe V., McFavilen, Heather, Arena, Chantal, Holman, Zachary C., Honsberg, Christiana B., Doolittle, W. Alan

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InGaN solar cells with regrown GaN homojunction tunnel contacts von Vadiee, Ehsan, Clinton, Evan A., McFavilen, Heather, Weidenbach, Alex S., Engel, Zachary, Matthews, Christopher, Zhang, Chaomin, Arena, Chantal, King, Richard R., Honsberg, Christiana B., Doolittle, W. Alan

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Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy von Gunning, Brendan P., Clinton, Evan A., Merola, Joseph J., Doolittle, W. Alan, Bresnahan, Rich C.

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