Controlling surface adatom kinetics for improved structural and optical properties of high indium content aluminum indium nitride von Engel, Zachary, Clinton, Evan A., Matthews, Christopher M., Doolittle, W. Alan

Volltext

Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts von Clinton, Evan A., Vadiee, Ehsan, Shen, Shyh-Chiang, Mehta, Karan, Yoder, P. Douglas, Doolittle, W. Alan

Volltext

Comprehensive Analysis of Metal Modulated Epitaxial GaN von Ahmad, Habib, Motoki, Keisuke, Clinton, Evan A, Matthews, Christopher M, Engel, Zachary, Doolittle, W. Alan

Volltext

Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance von Clinton, Evan A., Engel, Zachary, Vadiee, Ehsan, Carpenter, Joe V., Holman, Zachary C., Doolittle, W. Alan

Volltext

Mechanical abuse simulation and thermal runaway risks of large-format Li-ion batteries von Wang, Hsin, Lara-Curzio, Edgar, Rule, Evan T., Winchester, Clinton S.

Volltext

Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices von Ahmad, Habib, Anderson, Travis J., Gallagher, James C., Clinton, Evan A., Engel, Zachary, Matthews, Christopher M., Alan Doolittle, W.

Volltext

Observation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy von Clinton, Evan A., Vadiee, Ehsan, Tellekamp, M. Brooks, Doolittle, W. Alan

Volltext

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN von Gunning, Brendan P., Fabien, Chloe A. M., Merola, Joseph J., Clinton, Evan A., Doolittle, W. Alan, Wang, Shuo, Fischer, Alec M., Ponce, Fernando A.

Volltext

Publisher’s Note: “Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices” [J. Appl. Phys 127, 215703 (2020)] von Ahmad, Habib, Anderson, Travis J., Gallagher, James C., Clinton, Evan A., Engel, Zachary, Matthews, Christopher M., Alan Doolittle, W.

Volltext

Thermal conductance across harmonic-matched epitaxial Al-sapphire heterointerfaces von Cheng, Zhe, Koh, Yee Rui, Ahmad, Habib, Hu, Renjiu, Shi, Jingjing, Liao, Michael E., Wang, Yekan, Bai, Tingyu, Li, Ruiyang, Lee, Eungkyu, Clinton, Evan A., Matthews, Christopher M., Engel, Zachary, Yates, Luke, Luo, Tengfei, Goorsky, Mark S., Doolittle, W. Alan, Tian, Zhiting, Hopkins, Patrick E., Graham, Samuel

Volltext

Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9  μ m/h by plasma-assisted molecular beam epitaxy von Gunning, Brendan P., Clinton, Evan A., Merola, Joseph J., Doolittle, W. Alan, Bresnahan, Rich C.

Volltext

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance von Vadiee, Ehsan, Clinton, Evan A., Carpenter, Joe V., McFavilen, Heather, Arena, Chantal, Holman, Zachary C., Honsberg, Christiana B., Doolittle, W. Alan

Volltext

Evaluating the performance of InGaN/GaN multi-quantum-well solar cells operated at elevated temperatures via DC and small-signal AC analysis von Vadiee, Ehsan, Fischer, Alec M., Clinton, Evan A., McFavilen, Heather, Patadia, Arshey, Arena, Chantal, Ponce, Fernando A., King, Richard R., Honsberg, Christiana B., Doolittle, William A.

Volltext

A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions von Clinton, Evan A., Vadiee, Ehsan, Fabien, Chloe A.M., Moseley, Michael W., Gunning, Brendan P., Doolittle, W. Alan, Fischer, Alec M., Wei, Yong O., Xie, Hongen, Ponce, Fernando A.

Volltext

Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance von Clinton, Evan A., Engel, Zachary, Vadiee, Ehsan, Carpenter, Joe V., Holman, Zachary C., Doolittle, W. Alan

Volltext

InGaN solar cells with regrown GaN homojunction tunnel contacts von Vadiee, Ehsan, Clinton, Evan A., McFavilen, Heather, Weidenbach, Alex S., Engel, Zachary, Matthews, Christopher, Zhang, Chaomin, Arena, Chantal, King, Richard R., Honsberg, Christiana B., Doolittle, W. Alan

Volltext

Observation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy von Clinton, Evan A., Vadiee, Ehsan, Tellekamp, M. Brooks, Doolittle, W. Alan

Volltext

Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts von Clinton, Evan A., Vadiee, Ehsan, Shen, Shyh-Chiang, Mehta, Karan, Yoder, P. Douglas, Doolittle, W. Alan

Volltext

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance von Vadiee, Ehsan, Clinton, Evan A., Carpenter, Joe V., McFavilen, Heather, Arena, Chantal, Holman, Zachary C., Honsberg, Christiana B., Doolittle, W. Alan

Volltext

Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy von Gunning, Brendan P., Clinton, Evan A., Merola, Joseph J., Doolittle, W. Alan, Bresnahan, Rich C.

Volltext