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Caractéristiques du prurit dans la pemphigoïde bulleuse et impact sur la qualité de vie: l’étude prospective multicentrique PruriPB von Briand, C., Gourier, G., Poizeau, F., Jelti, L., Bachelerie, M., Quéreux, G., Jeudy, G., Acquitter, M., Oro, S., Caux, F., Darrigade, A.S., Heron Mermin, D., Mahé, E., Picart Dahan, C., Richard, M.-A., Clerc, C.J., Salle De Chou, C., Bernard, P., Abasq, C., Misery, L., Brenaut, E.

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Implantation-induced disorder in amorphous Ge: Production and relaxation von Ridgway, M.C, Glover, C.J, Desnica-Frankovic, I.D, Furic, K, Yu, K.M, Foran, G.J, Clerc, C, Hansen, J.L, Nylandsted Larsen, A

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Structure and low temperature relaxation of ion implanted germanium von Glover, C.J., Ridgway, M.C., Yu, K.M., Foran, G.J., Desnica-Frankovic, D., Clerc, C., Hansen, J.L., Nylandsted-Larsen, A.

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Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation von Yu, Kin Man, Walukiewicz, W., Muto, S., Jin, H.-C., Abelson, J. R., Clerc, C., Glover, C. J., Ridgway, M. C.

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Micro- and macro-structure of implantation-induced disorder in Ge von Glover, C.J., Ridgway, M.C., Byrne, A.P., Yu, K.M., Foran, G.J., Clerc, C., Hansen, J.L, Nylandsted Larsen, A.

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Local structures of Ga atoms in amorphous silicon and hydrogenatedamorphous silicon before and after synchrotron X-ray irradiation von Yu, Kin Man, Walukiewicz, W., Muto, S., Jin, H.-C., Abelson,J.R., Clerc, C., Glover, C.J., Ridgway, M.C.

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Structure and low-temperature thermal relaxation of ion-implanted germanium von Glover, C. J., Ridgway, M. C., Yu, K. M., Foran, G. J., Clerc, C., Hansen, J. L., Nylandsted-Larsen, A.

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Ion-dose-dependent microstructure in amorphous Ge von Ridgway, M. C., Glover, C. J., Yu, K. M., Foran, G. J., Clerc, C., Hansen, J. L., Larsen, A. Nylandsted

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Structural-relaxation-induced bond length and bond angle changes in amorphized Ge von Glover, C. J., Ridgway, M. C., Yu, K. M., Foran, G. J., Desnica-Frankovic, D., Clerc, C., Hansen, J. L., Nylandsted-Larsen, A.

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Composition-dependent bond lengths in crystalline and amorphized Ge$_x$Si$_{1-x}$ alloys von Ridgway, M.C., Yu, K.M., Glover, C.J., Foran, G.J., Clerc, C., Hansen, J.L., Larsen, A.N.

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