Rate-determining reactions and surface species in CVD of silicon III. The SiH4-H2-N2 system von Claassen, W.A.P., Bloem, J.

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On the relation between deposition conditions and (mechanical) stress in plasma silicon nitride layers von Claassen, W.A.P., Valkenburg, W.G.J.M., Wijgert, W.M.v.d., Willemsen, M.F.C.

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Rate-determining reactions and surface species in CVD of silicon von Claassen, W.A.P., Bloem, J.

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Rate-determining reactions and surface species in CVD of silicon von Bloem, J., Claassen, W.A.P.

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Plasma-enhanced deposition of amorphous silicon at temperatures between 300 and 500 °C von Claassen, W.A.P.

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Rate-determining reactions and surface species in CVD of silicon III. The SiH 4-H 2-N 2 system von Claassen, W.A.P., Bloem, J.

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Rate-determining reactions and surface species in CVD of silicon: II. The SiH 2Cl 2-H 2-N 2-HCL system von Claassen, W.A.P., Bloem, J.

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Ion bombardment-induced mechanical stress in plasma-enhanced deposited silicon nitride and silicon oxynitride films von CLAASSEN, W. A. P

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The deposition of silicon from silane in a low-pressure hot-wall system von Claassen, W.A.P., Bloem, J., Valkenburg, W.G.J.N., Van Den Brekel, C.H.J.

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Rate-determining reactions and surface species in CVD silicon von Bloem, J., Claassen, W.A.P., Valkenburg, W.G.J.N.

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Rate-determining reactions and surface species in CVD silicon: IV. The SiCl4-H2-N2 and the SiHCl3-H2-N2 system von Bloem, J., Claassen, W.A.P., Valkenburg, W.G.J.N.

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