Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation von Afanas’ev, V. V., Stesmans, A., Ciobanu, F., Pensl, G., Cheong, K. Y., Dimitrijev, S.

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Band alignment and defect states at SiC/oxide interfaces von Afanas’ev, V V, Ciobanu, F, Dimitrijev, S, Pensl, G, Stesmans, A

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Enhancement of optical absorption and photocurrent of 6H-SiC by laser surface nanostructuring von Zhao, Q. Z., Ciobanu, F., Malzer, S., Wang, L. J.

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Steel refining possibilities in LF von Dumitru, M G, Ioana, A, Constantin, N, Ciobanu, F, Pollifroni, M

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Traps at the Interface of 3C-SiC/SiO2-MOS-Structures von Dimitrijev, Sima, Wagner, Günter, Ciobanu, Florin, Schöner, Adolf, Nagasawa, Hiroyuki, Cheong, K.Y., Afanas'ev, Valeri V., Pensl, Gerhard

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Defect-engineering in SiC by ion implantation and electron irradiation von Pensl, G., Ciobanu, F., Frank, T., Kirmse, D., Krieger, M., Reshanov, S., Schmid, F., Weidner, M., Ohshima, T., Itoh, H., Choyke, W.J.

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Anatomie de la citerne ambiante en vision trans-piale après approche « keyhole » trans-T2 von Raftopoulos, C, Ciobanu, F, Vaz, G

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Self-organized regular arrays of carbon nanocones induced by ultrashort laser pulses and their field emission properties von Zhao, Q. Z., Ciobanu, F., Wang, L. J.

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Proton trapping in SiO2 layers thermally grown on Si and SiC von Afanas’ev, V.V., Ciobanu, F., Pensl, G., Stesmans, A.

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ALD Deposited Al2O3 Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere von Gao, K Y, Seyller, Th, Emtsev, K, Ley, L, Ciobanu, F, Pensl, G

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Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001) von Dimitrijev, Sima, Stesmans, Andre, Zhong, L., Ciobanu, Florin, Campbell, S.A., Cheong, K.Y., Afanas'ev, Valeri V., Pensl, Gerhard

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Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation von Schöner, Adolf, Afanas'ev, Valeri V., Ciobanu, Florin, Pensl, Gerhard

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Enhancement of optical absorption and photocurrent of 6 H - Si C by laser surface nanostructuring von Zhao, Q. Z., Ciobanu, F., Malzer, S., Wang, L. J.

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SiC/SiO2 Interface States: Properties and Models von Dimitrijev, Sima, Stesmans, Andre, Afanas'ev, Valeri V., Ciobanu, Florin, Pensl, Gerhard

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Electrical and Optical Characterization of SiC von Reshanov, Sergey A., Semmelroth, Kurt, Schulze, Norbert, Laube, Michael, Wagner, Günter, Schmid, Frank, Ciobanu, Florin, Schöner, Adolf, Nagasawa, Hiroyuki, Pensl, Gerhard

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Influence of the substrate temperature on BCN films deposited by sequential pulsed laser deposition von Teodorescu, V.S., Luches, A., Dinu, R., Zocco, A., Ciobanu, M.F., Martino, M., Sandu, V., Dinescu, M.

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Band alignment and defect states at SiC/oxide interfaces : Silicon carbide von AFANAS'EV, V. V, CIOBANU, F, DIMITRIJEV, S, PENSL, G, STESMANS, A

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Proton trapping in SiO sub 2 layers thermally grown on Si and SiC von Afanas'ev, V V, Ciobanu, F, Pensl, G, Stesmans, A

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Al 2 O 3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001) von Gao, K. Y., Seyller, Th, Ley, L., Ciobanu, F., Pensl, G., Tadich, A., Riley, J. D., Leckey, R. G. C.

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Proton trapping in SiO 2 layers thermally grown on Si and SiC von Afanas’ev, V.V., Ciobanu, F., Pensl, G., Stesmans, A.

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