Intrinsic vacancy in 2D defective semiconductor In2S3 for artificial photonic nociceptor von Wang, Peng, Xue, Wuhong, Ci, Wenjuan, Yang, Ruilong, Xu, Xiaohong

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Integrated In‐Memory Sensor and Computing of Artificial Vision Based on Full‐vdW Optoelectronic Ferroelectric Field‐Effect Transistor von Wang, Peng, Li, Jie, Xue, Wuhong, Ci, Wenjuan, Jiang, Fengxian, Shi, Lei, Zhou, Feichi, Zhou, Peng, Xu, Xiaohong

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Engineering Ferroelectric‐/Ion‐Modulated Conductance in 2D vdW CuInP2S6 for Non‐Volatile Digital Memory and Artificial Synapse von Ci, Wenjuan, Wang, Peng, Xue, Wuhong, Yuan, Hongtao, Xu, Xiaohong

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All‐In‐One Optoelectronic Neuristor Based on Full‐vdW Two‐Terminal Ferroelectric p–n Heterojunction von Ci, Wenjuan, Xue, Wuhong, Wang, Peng, Yin, Wenhui, Wang, Xiaoling, Shi, Lei, Zhou, Peng, Xu, Xiaohong

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Engineering Ferroelectric‐/Ion‐Modulated Conductance in 2D vdW CuInP 2 S 6 for Non‐Volatile Digital Memory and Artificial Synapse von Ci, Wenjuan, Wang, Peng, Xue, Wuhong, Yuan, Hongtao, Xu, Xiaohong

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Effects of temperature on reaction path, spreading and wetting mechanism of Cu–20Sn–2Cr/graphite von Ci, Wenjuan, Shi, Yu, Lin, Qiaoli, Gu, Yufen, Li, Guang

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Reactive spontaneous infiltration and spreading wetting of graphite by Cu–aTi (a = 17, 34, 68 at. %) alloys at 1100 °C von Ci, Wenjuan, Shi, Yu, Lin, Qiaoli, Yang, Likai, Ma, Zhongbao

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Thickness-dependent and strain-tunable magnetism in two-dimensional van der Waals VSe2 von Ci, Wenjuan, Yang, Huali, Xue, Wuhong, Yang, Ruilong, Lv, Baohua, Wang, Peng, Li, Run-Wei, Xu, Xiao-Hong

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Wavelength‐Selective Photodetector and Neuromorphic Visual Sensor Utilizing Intrinsic Defect Semiconductor von Wang, Peng, Xue, Wuhong, Zeng, Jianmin, Ci, Wenjuan, Chen, Qilai, Lv, Baohua, Yang, Ruilong, Liu, Yang, Liu, Gang, Xu, Xiaohong

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Optoelectronic memristor for neuromorphic computing von Xue, Wuhong, Ci, Wenjuan, Xu, Xiao-Hong, Liu, Gang

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Effect of ultrasonic vibration on wetting of water/Cu, water/PTFE, E-GaIn/Cu and E-GaIn/graphite von Lin, Qiaoli, Xing, Chunxiao, Sui, Ran, Ci, Wenjuan, Xu, Yang

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Wetting of amorphous and partial crystalline Co73Si10B17 by Sn and Sn-based lead-free solders von Lin, Qiaoli, Ye, Changsheng, Sui, Ran, Ci, Wenjuan

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Wetting of Cu and Cu-Sn IMCs by Sn-Bi Alloys over Wide Composition at 350°C von Sui, Ran, Li, Fuxiang, Ci, Wenjuan, Lin, Qiaoli

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Intrinsic vacancy in 2D defective semiconductor In 2 S 3 for artificial photonic nociceptor von Wang, Peng, Xue, Wuhong, Ci, Wenjuan, Yang, Ruilong, Xu, Xiaohong

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Reactive wetting of amorphous silica by Sn0.3Ag0.7Cu-xTi (x = 1 and 3 wt.%) alloys at 800–900 °C von Sui, Ran, Wang, Jianbin, Ci, Wenjuan, Lin, Qiaoli, Yang, Hongyu

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Layer-dependent ferroelectricity in 2H-stacked few-layer α-In2Se3 von Lv, Baohua, Yan, Zhi, Xue, Wuhong, Yang, Ruilong, Li, Jiayi, Ci, Wenjuan, Pang, Ruixue, Zhou, Peng, Liu, Gang, Liu, Zhongyuan, Zhu, Wenguang, Xu, Xiaohong

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Optoelectronic memristor for neuromorphic computingProject supported by the National Key R&D Program of China (Grant No. 2017YFB0405600), the National Natural Science Foundation of... von Xue, Wuhong, Ci, Wenjuan, Xu, Xiao-Hong, Liu, Gang

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Layer-dependent ferroelectricity in 2H-stacked few-layer α-In 2 Se 3 von Lv, Baohua, Yan, Zhi, Xue, Wuhong, Yang, Ruilong, Li, Jiayi, Ci, Wenjuan, Pang, Ruixue, Zhou, Peng, Liu, Gang, Liu, Zhongyuan, Zhu, Wenguang, Xu, Xiaohong

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Layer-dependent ferroelectricity in 2H-stacked few-layer α-InSe von Lv, Baohua, Yan, Zhi, Xue, Wuhong, Yang, Ruilong, Li, Jiayi, Ci, Wenjuan, Pang, Ruixue, Zhou, Peng, Liu, Gang, Liu, Zhongyuan, Zhu, Wenguang, Xu, Xiaohong

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Transistor device, application and preparation thereof von CI WENJUAN, PANG RUIXUE, LYU BAOHUA, YANG RUILONG, XUE WUHONG, XU XIAOHONG

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