Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping von Yen, Cheng-Tyng, Hung, Chien-Chung, Hung, Hsiang-Ting, Lee, Chwan-Ying, Lee, Lurng-Shehng, Huang, Yao-Feng, Hsu, Fu-Jen

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Negative bias temperature instability on subthreshold swing of SiC MOSFET von Yen, Cheng Tyng, Hung, Chien Chung, Chen, Tzong Liang, Hung, Hsiang Ting, Lee, Lurng Shehng, Hsu, Fu Jen, Lee, Chwan Ying, Huang, Yao Feng

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Demonstration of Lateral IGBTs in 4H-SiC von CHU, Kuan-Wei, LEE, Wen-Shan, CHENG, Chi-Yin, HUANG, Chih-Fang, FENG ZHAO, LEE, Lurng-Shehng, CHEN, Young-Shying, LEE, Chwan-Ying, TSAI, Min-Jinn

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Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO2 insertion method von Tsui, Bing-Yue, Cheng, Jung-Chien, Lee, Lurng-Shehng, Lee, Chwan-Ying, Tsai, Ming-Jinn

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A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient von Tseng, Yuan-Hung, Wu, Tsung-Han, Tsui, Bing-Yue, Yen, Cheng-Tyng, Hung, Chien-Chung, Lee, Chwan-Ying

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Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs von Chao, Der-Sheng, Shih, Hua-Yu, Jiang, Jheng-Yi, Huang, Chih-Fang, Chiang, Ching-Yu, Ku, Ching-Shun, Yen, Cheng-Tyng, Lee, Lurng-Sheng, Hsu, Fu-Jen, Chu, Kuo-Ting, Hung, Chien-Chung, Lee, Chwan-Ying

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An Experimental Study on High-Frequency Substrate Noise Isolation in BiCMOS Technology von Ping-Chun Yeh, Hwann-Kaeo Chiou, Chwan-Ying Lee, Yeh, J., Tang, D., Chern, J.

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A novel 4H-SiC Trench MOS Barrier Schottky rectifier fabricated by a two-mask process von Chwan-Ying Lee, Cheng-Tyng Yen, Kuan-Wei Chu, Young-Shying Chen, Chien-Chung Hung, Lurng-Shehng Lee, Tzu-Ming Yang, Chiao-Shun Chuang, Cheng-Chin Huang, Ming-Jinn Tsai

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A harmonic injection-locked frequency divider in 0.18-/spl mu/m SiGe BiCMOS von Chien, Jun-Chau, Lin, Chin-Shen, Lu, Liang-Hung, Wang, Huei, Yeh, J, Lee, Chwan-Ying, Chern, J

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Simulation and Optimization of 4H-SiC DMOSFET Power Transistors von Hung, Chien Chung, Lee, Lurng Shehng, Yen, Cheng Tyng, Lee, Chwan Ying, Chen, Young Shying, Tsai, Ming Jinn

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SiC Epi-Channel Lateral MOSFETs von Bakowski, Mietek, Reshanov, Sergey A., Chiu, Ting Yu, Huang, Chih Fang, Lee, Lurng Shehng, Wei, Jeng Hua, Schöner, Adolf, Yen, Cheng Tyng, Lee, Chwan Ying, Hung, Chien Chung

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Method of creating local semi-insulating regions on silicon wafers for device isolation and realization of high-Q inductors von Liao, Chungpin, Huang, Tzuen-Hsi, Lee, Chwan-Ying, Tang, Denny, Lan, Shan-Ming, Yang, Tsun-Neng, Lin, Li-Fu

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Solderability of Electroless Nickel Alloys Using Wetting Balance Technique von Lee, C-Y, Lin, K-L

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Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues von Hung, Chien Chung, Ku, Tzu Kun, Lee, Chwan Ying, Yen, Cheng Tyng, Chen, Yung Hsiang, Lin, Suh Fang, Xuan, Rong, Kuo, Wei Hung, Lee, Lurng Shehng, Tsai, Ming Jinn

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(Invited) Innovative Wide Band Gap Power Devices Achievements in ITRI von Lee, Chwan Ying, Chen, Yung-Hsiang, Lee, Lurng-Shehng, Hung, Chien-Chung, Yen, Cheng-Tyng, Lin, Suh-Fang, Xuan, Rong, Kuo, Wei-Hung, Tsai, Ming-Jinn

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Effects of Mechanical Uniaxial Stress on SiGe HBT Characteristics von Wang, Tzu-Juei, Chen, Hung-Wei, Yeh, Ping-Chun, Ko, Chih-Hsin, Chang, Shoou-Jinn, Yeh, John, Wu, San-Lein, Lee, Chwan-Ying, Lee, Wen-Chin, Tang, Denny D.

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High power density, high efficiency 1 W SiGe power HBT for 2.4 GHz power amplifier applications von Yeh, Ping-Chun, Chiou, Hwann-Kaeo, Lee, Chwan-Ying, Yeh, John, Tsai, Yi-Hung, Tang, Denny, Chern, John

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Wetting kinetics and the interfacial interaction behavior between electroless Ni-Cu-P and molten solder von Lee, C-Y, Lin, K-L

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The interaction kinetics and compound formation between electroless NiP and solder von Lee, Chwan-Ying, Lin, Kwang-Lung

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Preparation of solder bumps incorporating electroless nickel-boron deposit and investigation on the interfacial interaction behaviour and wetting kinetics von Lee, Chwan-ying, Lin, Kwang-lung

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