Gate-recessed delta-doping enhancement-mode Al0.2Ga0.8As/In0.15Ga0.85As PHEMTs using a new citric buffer etchant von Yarn, K.F., Liao, C.I., Wang, Y.H., Houng, M.P., Chure, M.C.

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Gate-recessed delta-doping enhancement-mode Al 0.2Ga 0.8As/In 0.15Ga 0.85As PHEMTs using a new citric buffer etchant von Yarn, K.F., Liao, C.I., Wang, Y.H., Houng, M.P., Chure, M.C.

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Pd/Oxide/InGaP MOS Schottky Hydrogen Sensor with Native Thin Oxide von Yarn, Kao Feng, Lin, Y.L., Chure, M.C., Wu, K.K., Chang, S.C.

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