Strain relaxation process of undoped and Si-doped semipolar AlxGa1−xN grown on (202¯1) bulk GaN substrate von Chung, Roy B., Sampath, Anand V., Nakamura, Shuji

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High power and high efficiency green light emitting diode on free-standing semipolar (11$ bar 2 $2) bulk GaN substrate von Sato, Hitoshi, Tyagi, Anurag, Zhong, Hong, Fellows, Natalie, Chung, Roy B., Saito, Makoto, Fujito, Kenji, Speck, James S., DenBaars, Steven P., Nakamura, Shuji

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High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar ($20\bar{2}1$) GaN Substrates von Yamamoto, Shuichiro, Zhao, Yuji, Pan, Chih-Chien, Chung, Roy B, Fujito, Kenji, Sonoda, Junichi, DenBaars, Steven P, Nakamura, Shuji

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The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes von Chung, Roy B., Han, Changseok, Pan, Chih-Chien, Pfaff, Nathan, Speck, James S., DenBaars, Steven P., Nakamura, Shuji

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Optical polarization switching in semipolar ( 20 2 ¯ 1 ) InGaN multiple quantum wells induced by strain engineering von Chung, Roy B., Garrett, Gregory A., Enck, Ryan W., Sampath, Anand V., Wraback, Michael, Reed, Meredith L.

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Electroluminescence Characterization of ($20\bar{2}1$) InGaN/GaN Light Emitting Diodes with Various Wavelengths von Chung, Roy B, Lin, You-Da, Koslow, Ingrid, Pfaff, Nathan, Ohta, Hiroaki, Ha, Junseok, DenBaars, Steven P, Nakamura, Shuji

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Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates von Vampola, Kenneth J., Fellows, Natalie N., Masui, Hisashi, Brinkley, Stuart E., Furukawa, Motoko, Chung, Roy B., Sato, Hitoshi, Sonoda, Junichi, Hirasawa, Hirohiko, Iza, Michael, DenBaars, Steven P., Nakamura, Shuji

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Growth study and impurity characterization of AlxIn1―xN grown by metal organic chemical vapor deposition von CHUNG, Roy B, FENG WU, SHIVARAMAN, Ravi, KELLER, Stacia, DENBAARS, Steven P, SPECK, James S, NAKAMURA, Shuji

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Optical properties of yellow light-emitting diodes grown on semipolar ( 11 2 ¯ 2 ) bulk GaN substrates von Sato, Hitoshi, Chung, Roy B., Hirasawa, Hirohiko, Fellows, Natalie, Masui, Hisashi, Wu, Feng, Saito, Makoto, Fujito, Kenji, Speck, James S., DenBaars, Steven P., Nakamura, Shuji

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High Power and High Efficiency Blue InGaN Light Emitting Diodes on Free-Standing Semipolar $(30\bar{3}\bar{1})$ Bulk GaN Substrate von Koslow, Ingrid L, Sonoda, Junichi, Chung, Roy B, Pan, Chih-Chien, Brinkley, Stuart, Ohta, Hiroaki, Nakamura, Shuji, DenBaars, Steven P

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High optical polarization ratio from semipolar ( 20 2 ¯ 1 ¯ ) blue-green InGaN/GaN light-emitting diodes von Zhao, Yuji, Tanaka, Shinichi, Yan, Qimin, Huang, Chia-Yen, Chung, Roy B., Pan, Chih-Chien, Fujito, Kenji, Feezell, Daniel, Van de Walle, Chris G., Speck, James S., DenBaars, Steven P., Nakamura, Shuji

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Growth and impurity characterization of AlN on (0001) sapphire grown by spatially pulsed MOCVD von Chung, Roy B., Rodak, Lee E., Enck, Ryan W., Sampath, Anand V., Wraback, Michael, Reed, Meredith L.

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High power and high efficiency blue light emitting diode on freestanding semipolar ( 10 1 ¯ 1 ¯ ) bulk GaN substrate von Zhong, Hong, Tyagi, Anurag, Fellows, Natalie N., Wu, Feng, Chung, Roy B., Saito, Makoto, Fujito, Kenji, Speck, James S., DenBaars, Steven P., Nakamura, Shuji

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AlGaN/SiC Heterojunction Ultraviolet Photodiodes von Chen, Yoajia, Reed, Meredith L., Garrett, Gregory A., Vanmil, Brenda L., Chung, Roy B., Shen, H., Sampath, Anand V., Zhou, Q., Wraback, Michael, Enck, Ryan W., Campbell, Joe C.

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Temperature Dependent Capacitance--Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN von Chung, Roy B, Bierwagen, Oliver, Wu, Feng, Keller, Stacia, DenBaars, Steven P, Speck, James S, Nakamura, Shuji

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Growth study and impurity characterization of Al In1−N grown by metal organic chemical vapor deposition von Chung, Roy B., Wu, Feng, Shivaraman, Ravi, Keller, Stacia, DenBaars, Steven P., Speck, James S., Nakamura, Shuji

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Conductive SnO2-x thin films deposited by thermal ALD with H2O reactant von Lee, Gyeong Ryul, Seong, Minhyeong, Kim, Seonchang, Pyeon, Kyeongjin, Chung, Roy B.

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InGaN/GaN laser diodes on semipolar (10$bar 1$$bar 1$) bulk GaN substrates von Tyagi, Anurag, Zhong, Hong, Chung, Roy B., Feezell, Daniel F., Saito, Makoto, Fujito, Kenji, Speck, James S., DenBaars, Steven P., Nakamura, Shuji

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384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer von Haeger, Daniel A., Young, Erin C., Chung, Roy B., Wu, Feng, Pfaff, Nathan A., Tsai, Min, Fujito, Kenji, DenBaars, Steven P., Speck, James S., Nakamura, Shuji, Cohen, Daniel A.

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The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN von Chung, Roy B., Chen, Hung-Tse, Pan, Chih-Chien, Ha, Jun-Seok, DenBaars, Steven P., Nakamura, Shuji

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