Highly reliable nitride-based LEDs with SPS+ITO upper contacts von Chang, S.J., Chang, C.S., Su, Y.K., Chuang, R.W., Lin, Y.C., Shei, S.C., Lo, H.M., Lin, H.Y., Ke, J.C.

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Lifetime Tests and Junction-Temperature Measurement of InGaN Light-Emitting Diodes Using Patterned Sapphire Substrates von Tsai, P.C., Chuang, R.W., Su, Y.K.

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Silver-indium joints produced at low temperature for high temperature devices von Chuang, R.W., Lee, C.C.

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Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface von Liu, C.H., Chuang, R.W., Chang, S.J., Su, Y.K., Wu, L.W., Lin, C.C.

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Nitride-based LEDs with an SPS tunneling contact Layer and an ITO transparent contact von Chang, S.J., Chang, C.S., Su, Y.K., Chuang, R.W., Lai, W.C., Kuo, C.H., Hsu, Y.P., Lin, Y.C., Shei, S.C., Lo, H.M., Ke, J.C., Sheu, J.K.

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Nitride-based LEDs with MQW active regions grown by different temperature profiles von Shoou-Jinn Chang, Wei, S.C., Su, Y.K., Chuang, R.W., Chen, S.M., Li, W.L.

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High-Temperature Stability of Lasing Wavelength in GaAsSb/GaAs QW Lasers von Cheng-Tien Wan, Yan-Kuin Su, Chuang, R.W., Hsin-Chieh Yu, Chun-Yuan Huang, Yi-Shin Wang, Wei-Cheng Chen, Wei-Heng Lin, Pilkuhn, M.H.

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Optical and Electrical Characteristics of ZnO Films Grown on Nitridated Si (1 0 0) Substrate with GaN and ZnO Double Buffer Layers von Chang, S.P., Chuang, R.W., Chang, S.J., Chiou, Y.Z., Lu, C.Y., Lin, T.K., Kuo, C.F., Chang, H.M.

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Nitride-Based MIS-Like Photodiodes With Semiinsulating Mg-Doped GaN Cap Layers von Chang, S.J., Yu, C.L., Chuang, R.W., Chang, P.C., Lin, Y.C., Jhan, Y.W., Chen, C.H.

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The effect of geometry on the noise characterization of SiGe HBTs and optimized device sizes for the design of low-noise amplifiers von Lin, C.-H., Yan-Kuin Su, Juang, Y.-Z., Chuang, R.W., Shoou-Jinn Chang, Chen, J.F., Chih-Ho Tu

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Nitride-based green light-emitting diodes with high temperature GaN barrier layers von Wu, L.W., Chang, S.J., Su, Y.K., Chuang, R.W., Wen, T.C., Kuo, C.H., Lai, W.C., Chang, C.S., Tsai, J.M., Sheu, J.K.

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Low-loss deep glass waveguides produced with dry silver electromigration process von Chuang, R.W., Lee, C.C.

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A fluxless process of producing tin-rich gold-tin joints in air von Chuang, R.W., Dongwook Kim, Jeong Park, Lee, C.C.

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MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode von Chang, S.P., Chuang, R.W., Chang, S.J., Chiou, Y.Z., Lu, C.Y.

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Fluxless non-eutectic joints fabricated using gold-tin multilayer composite von Lee, C.C., Chuang, R.W.

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GaN grown on Si(1 1 1) with step-graded AlGaN intermediate layers von Huang, C.C., Chang, S.J., Chuang, R.W., Lin, J.C., Cheng, Y.C., Lin, W.J.

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1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE von Wu, T.H., Su, Y.K., Chuang, R.W., Huang, C.Y., Wu, H.J., Lin, Y.C.

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A simple and reliable wafer-level electrical probing technique for III-nitride light-emitting epitaxial structures von Zhao, Y.S., Jensen, C.L., Chuang, R.W., Lee, H.P., Dong, Z.J., Shih, R.

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Surface HCl treatment in ZnO photoconductive sensors von Chang, S.P., Chuang, R.W., Chang, S.J., Lu, C.Y., Chiou, Y.Z., Hsieh, S.F.

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Improved ESD properties by combining GaN-based light-emitting diode with MOS capacitor von Chuang, R.W., Tsai, P.C., Su, Y.K., Chu, C.H.

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