MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode von Chang, S.P., Chuang, R.W., Chang, S.J., Chiou, Y.Z., Lu, C.Y.

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GaN grown on Si(1 1 1) with step-graded AlGaN intermediate layers von Huang, C.C., Chang, S.J., Chuang, R.W., Lin, J.C., Cheng, Y.C., Lin, W.J.

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1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE von Wu, T.H., Su, Y.K., Chuang, R.W., Huang, C.Y., Wu, H.J., Lin, Y.C.

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Surface HCl treatment in ZnO photoconductive sensors von Chang, S.P., Chuang, R.W., Chang, S.J., Lu, C.Y., Chiou, Y.Z., Hsieh, S.F.

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Temperature effect on the growth of strained GaAs1-ySby/GaAs (y>0.4) quantum wells by MOVPE von SU, Y. K, WAN, C. T, CHUANG, R. W, HUANG, C. Y, CHEN, W. C, WANG, Y. S, YU, H. C

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Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface von Liu, C.H., Chuang, R.W., Chang, S.J., Su, Y.K., Wu, L.W., Lin, C.C.

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Nitride-based LEDs with an SPS tunneling contact Layer and an ITO transparent contact von Chang, S.J., Chang, C.S., Su, Y.K., Chuang, R.W., Lai, W.C., Kuo, C.H., Hsu, Y.P., Lin, Y.C., Shei, S.C., Lo, H.M., Ke, J.C., Sheu, J.K.

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Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE von Su, Y.K., Chen, W.C., Wan, C.T., Yu, H.C., Chuang, R.W., Tsai, M.C., Cheng, K.Y., Hu, C., Tsau, Seth

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Characterization of ZnO metal–semiconductor–metal ultraviolet photodiodes with palladium contact electrodes von Young, S J, Ji, L W, Chuang, R W, Chang, S J, Du, X L

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InGaN-GaN MQW Metal-Semiconductor-Metal Photodiodes With Semi-Insulating Mg-Doped GaN Cap Layers von Yu, C.L., Chuang, R.W., Chang, S.J., Chang, P.C., Lee, K.H., Lin, J.C.

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MOCVD Growth of InN on Si(111) with Various Buffer Layers von Huang, C.C., Chuang, R.W., Chang, S.J., Lin, J.C., Cheng, Y.C., Lin, W.J.

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Nitride-based near-ultraviolet LEDs with an ITO transparent contact von Kuo, C.H., Chang, S.J., Su, Y.K., Chuang, R.W., Chang, C.S., Wu, L.W., Lai, W.C., Chen, J.F., Sheu, J.K., Lo, H.M., Tsai, J.M.

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Crystal growth and characterization of AlGaN/GaN heterostructures prepared on vicinal-cut sapphire (0 0 0 1) substrates von Chuang, R.W., Yu, C.L., Chang, S.J., Chang, P.C., Lin, J.C., Kuan, T.M.

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Nitride-based LEDs with n--GaN current spreading layers von SU, Y. K, CHANG, S. J, WEI, S. C, CHUANG, R. W, CHEN, S. M, LI, W. L

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Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures von Jhou, Y.D., Chen, C.H., Chuang, R.W., Chang, S.J., Su, Y.K., Chang, P.C., Chen, P.C., Hung, H., Wang, S.M., Yu, C.L.

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Investigation of InGaAsN MSM photodetectors with transparent ITO Schottky contacts von Chen, W C, Su, Y K, Chuang, R W, Yu, H C, Chen, B Y, Hsu, S H

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A novel transparent ohmic contact of indium tin oxide to n-type GaN von Hwang, J.D., Yang, G.H., Chang, W.T., Lin, C.C., Chuang, R.W., Chang, S.J.

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Highly reliable nitride-based LEDs with SPS+ITO upper contacts von Chang, S.J., Chang, C.S., Su, Y.K., Chuang, R.W., Lin, Y.C., Shei, S.C., Lo, H.M., Lin, H.Y., Ke, J.C.

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Optical investigations on the surfactant effects of Sb on InGaAsN multiple quantum wells grown by MOVPE von Chen, W.C., Su, Y.K., Chuang, R.W., Tsai, M.C., Cheng, K.Y., Wang, Y.S.

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Nitride-based LEDs with MQW active regions grown by different temperature profiles von Shoou-Jinn Chang, Wei, S.C., Su, Y.K., Chuang, R.W., Chen, S.M., Li, W.L.

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