HPR21 Characteristics and Treatment Patterns of Tofacitinib Users in Taiwan, 2015-2019 von Chuang, HM, Lin, CW, Huang, WI, Kuo, WJ, Chen, WW, Hsiao, FYS

Volltext

Integration of PEG 400 into a self-nanoemulsifying drug delivery system improves drug loading capacity and nasal mucosa permeability and prolongs the survival of rats with malignan... von Chen, Yu-Shuan, Chiu, Yu-Han, Li, Yuan-Sheng, Lin, En-Yi, Hsieh, Dean-Kuo, Lee, Chia-Hung, Huang, Mao-Hsuan, Chuang, Hong-Meng, Lin, Shinn-Zong, Harn, Horng-Jyh, Chiou, Tzyy-Wen

Volltext

An 11-year retrospective review of venlafaxine ingestion in children from the California Poison Control System von Doroudgar, S, Perry, PJ, Lackey, GD, Veselova, NG, Chuang, HM, Albertson, TE

Volltext

Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT von LAI, Po-Hsien, CHEN, Chun-Wei, KAO, Chung-I, FU, Ssu-I, TSAI, Yan-Ying, HUNG, Ching-Wen, YEN, Chih-Hung, CHUANG, Hung-Ming, CHENG, Shiou-Ying, LIU, Wen-Chau

Volltext

Temperature-dependent characteristics of polysilicon and diffused resistors von Chuang, Hung-Ming, Thei, Kong-Beng, Tsai, Sheng-Fu, Liu, Wen-Chau

Volltext

A new Pd-oxide-Al0.3Ga0.7As MOS hydrogen sensor von Lu, Chun-Tsen, Lin, Kun-Wei, Chen, Huey-Ing, Chuang, Hung-Ming, Chen, Chun-Yuan, Liu, Wen-Chau

Volltext

Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT) von Yu, Kuo-Hui, Chuang, Hung-Ming, Lin, Kun-Wei, Cheng, Shiou-Ying, Cheng, Chin-Chuan, Chen, Jing-Yuh, Liu, Wen-Chau

Volltext

Investigation of hydrogen-sensing properties of Pd/AlGaAs-based Schottky diodes von Tsai, Yan-Ying, Lin, Kun-Wei, Lu, Chun-Tsen, Chen, Huey-Ing, Chuang, Hung-Ming, Chen, Chun-Yuan, Cheng, Chin-Chuan, Liu, Wen-Chau

Volltext

Hydrogen sensing characteristics of Pd- and Pt-Al0.3Ga0.7As metal–semiconductor (MS) Schottky diodes von Cheng, Chin-Chuan, Tsai, Yan-Ying, Lin, Kun-Wei, Chen, Huey-Ing, Hsu, Wei-Hsi, Chuang, Hung-Ming, Chen, Chun-Yuan, Liu, Wen-Chau

Volltext

A hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode hydrogen sensor von Lin, Kun-Wei, Chen, Huey-Ing, Lu, Chun-Tsen, Tsai, Yan-Ying, Chuang, Hung-Ming, Chen, Chun-Yuan, Liu, Wen-Chau

Volltext

On a GaAs-based transistor-type hydrogen sensing detector with a Pd/Al0.24Ga0.76As metal–semiconductor Schottky gate von Tsai, Yan-Ying, Hung, Ching-Wen, Lin, Kun-Wei, Lai, Po-Hsien, Fu, Ssu-I, Chuang, Hung-Ming, Chen, Huey-Ing, Liu, Wen-Chau

Volltext

A novel InP/InGaAs TEBT for ultralow current operations von Chen, Chun-Yuan, Cheng, Shiou-Ying, Chiou, Wen-Hui, Chuang, Hung-Ming, Liu, Wen-Chau

Volltext

DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT) von Chen, Chun-Yuan, Cheng, Shiou-Ying, Chiou, Wen-Hui, Chuang, Hung-Ming, Liu, Rong-Chau, Yen, Chih-Hung, Chen, Jing-Yuh, Cheng, Chin-Chuan, Liu, Wen-Chau

Volltext

Anomalous temperature-dependent characteristics of silicon diffused resistors von Chuang, Hung-Ming, Tsai, Sheng-Fu, Thei, Kong-Beng, Liu, Wen-Chau

Volltext

A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor von Lin, Kun-Wei, Cheng, Chin-Chuan, Cheng, Shiou-Ying, Yu, Kuo-Hui, Wang, Chih-Kai, Chuang, Hung-Ming, Chen, Jing-Yuh, Wu, Cheng-Zu, Liu, Wen-Chau

Volltext

Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure von Chen, Chun-Yuan, Cheng, Shiou-Ying, Chiou, Wen-Hui, Chuang, Hung-Ming, Fu, Ssu-I, Liu, Wen-Chau

Volltext

On the high-performance n +-GaAs/p +-InGaP/n-GaAs high-barrier gate camel-like HFETs von Wang, Chih-Kai, Yu, Kuo-Hui, Chiou, Wen-Hui, Chen, Chun-Yuan, Chuang, Hung-Ming, Liu, Wen-Chau

Volltext

Characterization of polysilicon resistors in sub-0.25 μm CMOS ULSI applications von Wen-Chau Liu, Kong-Beng Thei, Hung-Ming Chuang, Kun-Wei Lin, Chin-Chuan Cheng, Yen-Shih Ho, Chi-Wen Su, Shyh-Chyi Wong, Chih-Hsien Lin, Diaz, C.H.

Volltext

Comparative study on dc characteristics of In0.49Ga0.51P-channel heterostructure field-effect transistors with different gate metals von Chuang, Hung-Ming, Wang, Chih-Kai, Lin, Kun-Wei, Chiou, Wen-Hui, Chen, Chun-Yuan, Liu, Wen-Chau

Volltext

Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures von Chiou, Wen-Huei, Pan, Hsi-Jen, Liu, Rong-Chau, Chen, Chun-Yuan, Wang, Chih-Kai, Chuang, Hung-Ming, Liu, Wen-Chau

Volltext