GaN-based diodes and transistors for chemical, gas, biological and pressure sensing von Pearton, S J, Kang, B S, Kim, Suku, Ren, F, Gila, B P, Abernathy, C R, Lin, Jenshan, Chu, S N G

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Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C von Theodoropoulou, N, Hebard, A F, Overberg, M E, Abernathy, C R, Pearton, S J, Chu, S N G, Wilson, R G

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Magnetic and structural properties of Mn-implanted GaN von Theodoropoulou, N., Hebard, A. F., Overberg, M. E., Abernathy, C. R., Pearton, S. J., Chu, S. N. G., Wilson, R. G.

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GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition von Ye, P.D., Wilk, G.D., Kwo, J., Yang, B., Gossmann, H.-J.L., Frei, M., Chu, S.N.G., Mannaerts, J.P., Sergent, M., Hong, M., Ng, K.K., Bude, J.

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Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes von Hsu, J. W. P., Manfra, M. J., Lang, D. V., Richter, S., Chu, S. N. G., Sergent, A. M., Kleiman, R. N., Pfeiffer, L. N., Molnar, R. J.

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Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si von Kwo, J., Hong, M., Kortan, A. R., Queeney, K. L., Chabal, Y. J., Opila, R. L., Muller, D. A., Chu, S. N. G., Sapjeta, B. J., Lay, T. S., Mannaerts, J. P., Boone, T., Krautter, H. W., Krajewski, J. J., Sergnt, A. M., Rosamilia, J. M.

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High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy von Ng, H. M., Moustakas, T. D., Chu, S. N. G.

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Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes von Kang, B. S., Kim, S., Ren, F., Johnson, J. W., Therrien, R. J., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J., Chu, S. N.G., Baik, K., Gila, B. P., Abernathy, C. R., Pearton, S. J.

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Magnetic and structural properties of Co, Cr, V ion-implanted GaN von Lee, J. S., Lim, J. D., Khim, Z. G., Park, Y. D., Pearton, S. J., Chu, S. N. G.

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Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs von Faist, Jérôme, Capasso, Federico, Sivco, Deborah L., Hutchinson, Albert L., Chu, Sung-Nee G., Cho, Alfred Y.

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High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia von Nikishin, S. A., Faleev, N. N., Antipov, V. G., Francoeur, S., Grave de Peralta, L., Seryogin, G. A., Temkin, H., Prokofyeva, T. I., Holtz, M., Chu, S. N. G.

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Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy von Hsu, J. W. P., Manfra, M. J., Chu, S. N. G., Chen, C. H., Pfeiffer, L. N., Molnar, R. J.

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Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors von Ren, F., Hong, M., Chu, S. N. G., Marcus, M. A., Schurman, M. J., Baca, A., Pearton, S. J., Abernathy, C. R.

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Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors von Kang, B. S., Kim, S., Kim, J., Ren, F., Baik, K., Pearton, S. J., Gila, B. P., Abernathy, C. R., Pan, C.-C., Chen, G.-T., Chyi, J.-I., Chandrasekaran, V., Sheplak, M., Nishida, T., Chu, S. N. G.

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High power mid-infrared (λ∼5 μm) quantum cascade lasers operating above room temperature von Faist, Jérôme, Capasso, Federico, Sirtori, Carlo, Sivco, Deborah L., Baillargeon, James N., Hutchinson, Albert L., Chu, Sung-Nee G., Cho, Alfred Y.

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Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane von Kang, B. S., Kim, J., Jang, S., Ren, F., Johnson, J. W., Therrien, R. J., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J., Chu, S. N. G., Baik, K., Gila, B. P., Abernathy, C. R., Pearton, S. J.

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Mining for high T c ferromagnetism in ion-implanted dilute magnetic semiconductors von Hebard, A F, Rairigh, R P, Kelly, J G, Pearton, S J, Abernathy, C R, Chu, S N G, Wilson, R G

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Ga2O3 films for electronic and optoelectronic applications von Passlack, M., Schubert, E. F., Hobson, W. S., Hong, M., Moriya, N., Chu, S. N. G., Konstadinidis, K., Mannaerts, J. P., Schnoes, M. L., Zydzik, G. J.

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Structural and optical characterization of nonpolar GaN/AlN quantum wells von Ng, H. M., Bell, A., Ponce, F. A., Chu, S. N. G.

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High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy von Manfra, M. J., Weimann, N. G., Hsu, J. W. P., Pfeiffer, L. N., West, K. W., Syed, S., Stormer, H. L., Pan, W., Lang, D. V., Chu, S. N. G., Kowach, G., Sergent, A. M., Caissie, J., Molvar, K. M., Mahoney, L. J., Molnar, R. J.

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