GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition von Ye, P.D., Wilk, G.D., Kwo, J., Yang, B., Gossmann, H.-J.L., Frei, M., Chu, S.N.G., Mannaerts, J.P., Sergent, M., Hong, M., Ng, K.K., Bude, J.

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Synchronized transform-limited operation of 10-GHz colliding pulse mode-locked laser von Ji, C., Chubun, N., Broeke, R.G., Cao, J., Du, Y., Yoo, S.J.B., Liou, K.Y., Lothian, J.R., Vatanapradit, S., Chu, S.N.G., Patel, B., Hobson, W.S., Tsang, W.T.

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GaN electronics for high power, high temperature applications von Pearton, S.J., Ren, F., Zhang, A.P., Dang, G., Cao, X.A., Lee, K.P., Cho, H., Gila, B.P., Johnson, J.W., Monier, C., Abernathy, C.R., Han, J., Baca, A.G., Chyi, J.-I., Lee, C.-M., Nee, T.-E., Chuo, C.-C., Chu, S.N.G.

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High voltage GaN Schottky rectifiers von Dang, G.T., Zhang, A.P., Ren, F., Cao, X.A., Pearton, S.J., Cho, H., Han, J., Chyi, J.-I., Lee, C.-M., Chuo, C.-C., Chu, S.N.G., Wilson, R.G.

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Improvement of GaAs metal–semiconductor field-effect transistor drain–source breakdown voltage by oxide surface passivation grown by atomic layer deposition von Ye, P.D., Wilk, G.D., Yang, B., Chu, S.N.G., Ng, K.K., Bude, J.

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Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers von Dang, G.T., Mehandru, R., Luo, B., Ren, F., Hobson, W.S., Lopata, J., Tayahi, M., Chu, S.N.G., Pearton, S.J., Chang, W., Shen, H.

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High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers von Dang, G., Hobson, W.S., Chirovsky, L.M.F., Lopata, J., Tayahi, M., Chu, S.N.G., Ren, F., Pearton, S.J.

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Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire von Johnson, J.W, Han, J, Baca, A.G, Briggs, R.D, Shul, R.J, Wendt, J.R, Monier, C, Ren, F, Luo, B, Chu, S.N.G, Tsvetkov, D, Dmitriev, V, Pearton, S.J

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Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane von Kang, B. S., Kim, J., Jang, S., Ren, F., Johnson, J. W., Therrien, R. J., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J., Chu, S. N. G., Baik, K., Gila, B. P., Abernathy, C. R., Pearton, S. J.

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Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs von Ren, F., Kuo, J.M., Hong, M., Hobson, W.S., Lothian, J.R., Lin, J., Tsai, H.S., Mannaerts, J.P., Kwo, J., Chu, S.N.G., Chen, Y.K., Cho, A.Y.

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Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide von Ren, F., Hong, M., Hobson, W.S., Kuo, J.M., Lothian, J.R., Mannaerts, J.P., Kwo, J., Chu, S.N.G., Chen, Y.K., Cho, A.Y.

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Molecular beam epitaxy of GaN/AlxGa1-xN superlattices for 1.52-4.2 μm intersubband transitions von NG, H. M, GMACHL, C, CHU, S. N. G, CHO, A. Y

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Improved CW operation of quantum cascade lasers with epitaxial-side heat-sinking von Gmachl, C., Sergent, A.M., Tredicucci, A., Capasso, F., Hutchinson, A.L., Sivco, D.L., Baillargeon, J.N., Chu, S.N.G., Cho, A.Y.

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The role of hydrogen in current-induced degradation of carbon-doped [formula omitted] heterojunction bipolar transistors von Ren, F, Abernathy, C.R, Chu, S.N.G, Lothian, J.R, Pearton, S.J

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Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors von Chu, S.N.G., Ren, F., Pearton, S.J., Kang, B.S., Kim, S., Gila, B.P., Abernathy, C.R., Chyi, J.-I., Johnson, W.J., Lin, J.

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Deep Ultraviolet AlGaInN-Based Light-Emitting Diodes on Si(111) and Sapphire von Kipshidze, G., Kuryatkov, V., Borisov, B., Nikishin, S., Holtz, M., Chu, S.N.G., Temkin, H.

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Characterization of the GaAs: C and AlGaAs: C doping superlattice grown by chemical beam epitaxy von Chiu, T.H., Cunningham, J.E., Ditzenberger, J.A., Jan, W.Y., Chu, S.N.G.

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Gallium diffusion into self-assembled InAs quantum dots grown on indium phosphide substrates von Raz, T., Shuall, N., Bahir, G., Ritter, D., Gershoni, D., Chu, S. N. G.

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40-Gb/s tandem electroabsorption modulator von Mason, B., Ougazzaden, A., Lentz, C.W., Glogovsky, K.G., Reynolds, C.L., Przybylek, G.J., Leibenguth, R.E., Kercher, T.L., Boardman, J.W., Rader, M.T., Geary, J.M., Walters, F.S., Peticolas, L.J., Freund, J.M., Chu, S.N.G., Sirenko, A., Jurchenko, R.J., Hybertsen, M.S., Ketelsen, L.J.P., Raybon, G.

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Complex-coupled quantum cascade distributed-feedback laser von Gmachl, C., Faist, J., Bailargeon, J.N., Capasso, F., Sirtori, C., Sivco, D.L., Chu, S.N.G., Cho, A.Y.

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