Controllable valley splitting in silicon quantum devices von Goswami, Srijit, Slinker, K. A, Friesen, Mark, Eriksson, Mark A, McGuire, L. M, Truitt, J. L, Tahan, Charles, Klein, L. J, Chu, J. O, Mooney, P. M, van der Weide, D. W, Joynt, Robert, Coppersmith, S. N

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High-speed Germanium-on-SOI lateral PIN photodiodes von Dehlinger, G., Koester, S.J., Schaub, J.D., Chu, J.O., Ouyang, Q.C., Grill, A.

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In situ x-ray diffraction study of graphitic carbon formed during heating and cooling of amorphous-C/Ni bilayers von Saenger, K. L., Tsang, J. C., Bol, A. A., Chu, J. O., Grill, A., Lavoie, C.

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Echinocandins Susceptibility Patterns of 2,787 Yeast Isolates: Importance of the Thresholds for the Detection of FKS Mutations von Desnos-Ollivier, Marie, Bretagne, Stéphane, Lortholary, Olivier, Dromer, Françoise

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SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors von Huang, L. J., Chu, J. O., Canaperi, D. F., D’Emic, C. P., Anderson, R. M., Koester, S. J., Wong, H.-S. Philip

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Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications von Koester, S.J., Schaub, J.D., Dehlinger, G., Chu, J.O.

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Doping of germanium nanowires grown in presence of PH3 von Tutuc, E., Chu, J. O., Ott, J. A., Guha, S.

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Coulomb blockade in a silicon/silicon–germanium two-dimensional electron gas quantum dot von Klein, L. J., Slinker, K. A., Truitt, J. L., Goswami, S., Lewis, K. L. M., Coppersmith, S. N., van der Weide, D. W., Friesen, Mark, Blick, R. H., Savage, D. E., Lagally, M. G., Tahan, Charlie, Joynt, Robert, Eriksson, M. A., Chu, J. O., Ott, J. A., Mooney, P. M.

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Extremely high electron mobility in Si/SiGe modulation-doped heterostructures von Ismail, K., Arafa, M., Saenger, K. L., Chu, J. O., Meyerson, B. S.

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Electron transport properties of Si/SiGe heterostructures : measurements and device implications von ISMAIL, K, NELSON, S. F, CHU, J. O, MEYERSON, B. S

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Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy von Koester, S. J., Rim, K., Chu, J. O., Mooney, P. M., Ott, J. A., Hargrove, M. A.

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Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads von Slinker, K A, Lewis, K L M, Haselby, C C, Goswami, S, Klein, L J, Chu, J O, Coppersmith, S N, Joynt, Robert, Blick, R H, Friesen, Mark, Eriksson, M A

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Raman scattering analysis of relaxed GexSi1-x alloy layers von MOONEY, P. M, DACOL, F. H, TSANG, J. C, CHU, J. O

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High hole mobility in SiGe alloys for device applications von Ismail, K., Chu, J. O., Meyerson, B. S.

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Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping von Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Canaperi, D.F., Tornello, J.A., Jahnes, C.V.

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Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures von Ismail, K, LeGoues, FK, Saenger, KL, Arafa, M, Chu, JO, Mooney, PM, Meyerson, BS

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Room-temperature electron mobility in strained Si/SiGe heterostructures von NELSON, S. F, ISMAIL, K, CHU, J. O, MEYERSON, B. S

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High-performance Si/SiGe n-type modulation-doped transistors von Ismail, K., Rishton, S., Chu, J.O., Chan, K., Meyerson, B.S.

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Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias von KOESTER, S. J, SAENGER, K. L, CHU, J. O, OUYANG, Q. C, OTT, J. A, JENKINS, K. A, CANAPERI, D. F, TORNELLO, J. A, JAHNES, C. V, STEEN, S. E

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Determination of spin- and valley-split energy levels in strained Si quantum wells von Koester, S J, Ismail, K, Chu, J O

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