Defects in SiO2 as the possible origin of near interface traps in the SiC/SiO2 system : A systematic theoretical study von KNAUP, J. M, DEAK, P, FRAUENHEIM, Th, GALI, A, HAJNAL, Z, CHOYKE, W. J

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Theoretical study of the mechanism of dry oxidation of 4H-SiC von KNAUP, Jan M, DEAK, Peter, FRAUENHEIM, Thomas, GALI, Adam, HAJNAL, Zoltan, CHOYKE, W. J

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Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces von Nie, S., Lee, C.D., Feenstra, R.M., Ke, Y., Devaty, R.P., Choyke, W.J., Inoki, C.K., Kuan, T.S., Gu, Gong

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Photoelectrochemical etching of n-type 4H silicon carbide von Shishkin, Y., Choyke, W. J., Devaty, R. P.

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Physical Properties of SiC von Choyke, W.J., Pensl, G.

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Comparative columnar porous etching studies on n-type 6H SiC crystalline faces von Ke, Y., Devaty, R. P., Choyke, W. J.

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Aggregation of carbon interstitials in silicon carbide: A theoretical study von Gali, A., Deák, P., Ordejón, P., Son, N. T., Janzén, E., Choyke, W. J.

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Field effect in epitaxial graphene on a silicon carbide substrate von Gu, Gong, Nie, Shu, Feenstra, R. M., Devaty, R. P., Choyke, W. J., Chan, Winston K., Kane, Michael G.

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Multiple bonding structures of C2H2 chemisorbed on Si(100) von MEZHENNY, S, LYUBINETSKY, I, CHOYKE, W. J, WOLKOW, R. A, YATES, J. T

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Determination of the phonon dispersion of zinc blende (3C) silicon carbide by inelastic x-ray scattering von Serrano, J., Strempfer, J., Cardona, M., Schwoerer-Böhning, M., Requardt, H., Lorenzen, M., Stojetz, B., Pavone, P., Choyke, W. J.

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Band structure properties, phonons, and exciton fine structure in 4H-SiC measured by wavelength-modulated absorption and low-temperature photoluminescence von Klahold, W M, Choyke, W J, Devaty, R P

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HALL-EFFECT AND INFRARED-ABSORPTION MEASUREMENTS ON NITROGEN DONORS IN 6H-SILICON CARBIDE von SUTTROP, W, PENSL, G, CHOYKE, WJ, STEIN, R, LEIBENZEDER, S

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Fabrication and morphology of porous p -type SiC von Shishkin, Y., Ke, Y., Devaty, R. P., Choyke, W. J.

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Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix von Bai, S., Devaty, R. P., Choyke, W. J., Kaiser, U., Wagner, G., MacMillan, M. F.

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Defect-engineering in SiC by ion implantation and electron irradiation von Pensl, G., Ciobanu, F., Frank, T., Kirmse, D., Krieger, M., Reshanov, S., Schmid, F., Weidner, M., Ohshima, T., Itoh, H., Choyke, W.J.

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Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths von Sridhara, S.G, Eperjesi, T.J, Devaty, R.P, Choyke, W.J

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Nitrogen donors in 4H-silicon carbide von GÖTZ, W, SCHÖNER, A, PENSL, G, SUTTROP, W, CHOYKE, W. J, STEIN, R, LEIBENZEDER, S

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On the band-A emission and boron related luminescence in diamond von RUAN, J, KOBASHI, K, CHOYKE, W. J

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Silicon adatom chains and one-dimensionally confined electrons on 4H-SiC ( 1 1 ¯ 02 ) : The (2 × 1) reconstruction von Virojanadara, C., Hetzel, M., Riedl, C., Johansson, L.I., Choyke, W.J., Starke, U.

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Optical Characterization of Silicon Carbide Polytypes von Devaty, R. P., Choyke, W. J.

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