Photoelectrochemical etching of n-type 4H silicon carbide von Shishkin, Y., Choyke, W. J., Devaty, R. P.

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Physical Properties of SiC von Choyke, W.J., Pensl, G.

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Surface polishing by electrochemical etching of p-type 4H SiC von Ke, Y., Yan, F., Devaty, R. P., Choyke, W. J.

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Defects in SiO2 as the possible origin of near interface traps in the SiC/SiO2 system : A systematic theoretical study von KNAUP, J. M, DEAK, P, FRAUENHEIM, Th, GALI, A, HAJNAL, Z, CHOYKE, W. J

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Optical Characterization of Silicon Carbide Polytypes von Devaty, R. P., Choyke, W. J.

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Theoretical study of the mechanism of dry oxidation of 4H-SiC von KNAUP, Jan M, DEAK, Peter, FRAUENHEIM, Thomas, GALI, Adam, HAJNAL, Zoltan, CHOYKE, W. J

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Comparative columnar porous etching studies on n-type 6H SiC crystalline faces von Ke, Y., Devaty, R. P., Choyke, W. J.

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Fabrication and morphology of porous p -type SiC von Shishkin, Y., Ke, Y., Devaty, R. P., Choyke, W. J.

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Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å von Sridhara, S. G., Devaty, R. P., Choyke, W. J.

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Enhanced silicon oxide film growth on Si (100) using electron impact von Xu, Jiazhan, Choyke, W. J., Yates, John T.

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On the band-A emission and boron related luminescence in diamond von RUAN, J, KOBASHI, K, CHOYKE, W. J

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Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces von Nie, S., Lee, C.D., Feenstra, R.M., Ke, Y., Devaty, R.P., Choyke, W.J., Inoki, C.K., Kuan, T.S., Gu, Gong

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Aggregation of carbon interstitials in silicon carbide: A theoretical study von Gali, A., Deák, P., Ordejón, P., Son, N. T., Janzén, E., Choyke, W. J.

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Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin Scattering von Choyke, Wolfgang J., Ke, Yue, Devaty, Robert P., Clouter, Maynard J.

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Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiC von Choyke, Wolfgang J., Yan, Fei, D'Urso, B., Devaty, Robert P.

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Role of the −SiH3 Functional Group in Silane Adsorption and Dissociation on Si(100) von Xu, Jiazhan, Choyke, W. J, Yates, John T

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Photoluminescence and transport studies of boron in 4H SiC von Sridhara, S. G., Clemen, L. L., Devaty, R. P., Choyke, W. J., Larkin, D. J., Kong, H. S., Troffer, T., Pensl, G.

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Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC von Aradi, B., Gali, A., Deák, P., Lowther, J. E., Son, N. T., Janzén, E., Choyke, W. J.

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New evidence for the second conduction band in 4H SiC von Klahold, Walter, Tabachnick, Charles, Freedman, Gabriel, Devaty, R. P., Choyke, W. J.

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Hydrogen passivation of carbon Pb like centers at the 3C- and 4H-SiC∕SiO2 interfaces in oxidized porous SiC von Cantin, J. L., von Bardeleben, H. J., Ke, Yue, Devaty, R. P., Choyke, W. J.

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