Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors von Chow, T. Paul, Omura, Ichiro, Higashiwaki, Masataka, Kawarada, Hiroshi, Pala, Vipindas

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Determination of the effective critical breakdown field for Si, wide, and extreme bandgap semiconductor superjunction devices von Torky, Mohamed, Chow, T. Paul

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Simulation-based Study of Single-Event Burnout in 4H-SiC High-Voltage Vertical Superjunction DMOSFET: Physical Failure Mechanism and Robustness vs. Performance Tradeoffs von McPherson, Joseph A., Woodworth, Andrew A., Chow, T. Paul, Ji, Wei

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Disaggregated Memory in the Datacenter: A Survey von Ewais, Mohammad, Chow, Paul

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Emergent superconductivity in an iron-based honeycomb lattice initiated by pressure-driven spin-crossover von Wang, Yonggang, Ying, Jianjun, Zhou, Zhengyang, Sun, Junliang, Wen, Ting, Zhou, Yannan, Li, Nana, Zhang, Qian, Han, Fei, Xiao, Yuming, Chow, Paul, Yang, Wenge, Struzhkin, Viktor V., Zhao, Yusheng, Mao, Ho-kwang

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Pressure-Driven Cooperative Spin-Crossover, Large-Volume Collapse, and Semiconductor-to-Metal Transition in Manganese(II) Honeycomb Lattices von Wang, Yonggang, Zhou, Zhengyang, Wen, Ting, Zhou, Yannan, Li, Nana, Han, Fei, Xiao, Yuming, Chow, Paul, Sun, Junliang, Pravica, Michael, Cornelius, Andrew L, Yang, Wenge, Zhao, Yusheng

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Design and Simulation of 5-20-kV GaN Enhancement-Mode Vertical Superjunction HEMT von Zhongda Li, Chow, T. Paul

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Monolithically Integrated GaN LED/Quasi-Vertical Power U-Shaped Trench-Gate MOSFET Pairs Using Selective Epi Removal von Guo, Zhibo, Bulsara, Mayank, Chow, T. Paul, Hitchcock, Collin, Wetzel, Christian, Karlicek, Robert F., Piao, Guanxi, Yano, Yoshiki, Koseki, Shuuichi, Tabuchi, Toshiya, Matsumoto, Koh

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Rutile solubility in NaF–NaCl–KCl-bearing aqueous fluids at 0.5–2.79 GPa and 250–650 °C von Tanis, Elizabeth A., Simon, Adam, Zhang, Youxue, Chow, Paul, Xiao, Yuming, Hanchar, John M., Tschauner, Oliver, Shen, Guoyin

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Hidden carbon in Earth’s inner core revealed by shear softening in dense Fe7C3 von Chen, Bin, Li, Zeyu, Zhang, Dongzhou, Liu, Jiachao, Hu, Michael Y, Zhao, Jiyong, Bi, Wenli, Alp, E Ercan, Xiao, Yuming, Chow, Paul, Li, Jie

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Altered chemistry of oxygen and iron under deep Earth conditions von Liu, Jin, Hu, Qingyang, Bi, Wenli, Yang, Liuxiang, Xiao, Yuming, Chow, Paul, Meng, Yue, Prakapenka, Vitali B., Mao, Ho-Kwang, Mao, Wendy L.

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Amorphous boron oxide at megabar pressures via inelastic X-ray scattering von Lee, Sung Keun, Kim, Yong-Hyun, Chow, Paul, Xiao, Yunming, Ji, Cheng, Shen, Guoyin

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Progress in High Voltage SiC and GaN Power Switching Devices von Chow, T. Paul

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Concurrent Pressure-Induced Spin-State Transitions and Jahn–Teller Distortions in MnTe von Wang, Pei, Zhu, Sheng-Cai, Zou, Yongtao, Chen, Haiyan, Liu, Ying, Li, Weiwei, Chen, Jian, Zhu, Jinlong, Wu, Liusuo, Wang, Shanmin, Yang, Wenge, Xiao, Yuming, Chow, Paul, Wang, Liping, Zhao, Yusheng

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Performance evaluation of channel length downscaling of various high voltage AlGaN/GaN power HEMTs von Guo, Zhibo, Chow, T. Paul

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Comparative performance evaluation of lateral and vertical GaN high-voltage power field-effect transistors von Guo, Zhibo, Hitchcock, Collin, Chow, Tat-Sing Paul

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Amorphous diamond: a high-pressure superhard carbon allotrope von Lin, Yu, Zhang, Li, Mao, Ho-kwang, Chow, Paul, Xiao, Yuming, Baldini, Maria, Shu, Jinfu, Mao, Wendy L

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4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n− Substrates von Chowdhury, Sauvik, Hitchcock, Collin, Stum, Zachary, Dahal, Rajendra, Bhat, Ishwara B., Chow, T. Paul

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An automated approach to the alignment of compound refractive lenses von Breckling, Sean, Kozioziemski, Bernard, Dresselhaus-Marais, Leora, Gonzalez, Arnulfo, Williams, Ajanaé, Simons, Hugh, Chow, Paul, Howard, Marylesa

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High-Performance Reconfigurable Hardware Architecture for Restricted Boltzmann Machines von Le Ly, Daniel, Chow, Paul

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