Development of the VGF Crystal Growth Recipe: Intelligent Solutions of Ill‐Posed Inverse Problems using Images and Numerical Data von Dropka, Natasha, Holena, Martin, Thieme, Cornelia, Chou, Ta‐Shun

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Exploring miscut angle influence on (100) β-Ga2O3 homoepitaxial films growth: Comparing MOVPE growth with MBE approaches von Chou, Ta-Shun, Rehm, Jana, Bin Anooz, Saud, Ernst, Owen, Akhtar, Arub, Galazka, Zbigniew, Miller, Wolfram, Albrecht, Martin, Seyidov, Palvan, Fiedler, Andreas, Popp, Andreas

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Charge state transition levels of Ni in β-Ga2O3 crystals from experiment and theory: An attractive candidate for compensation doping von Seyidov, Palvan, Varley, Joel B., Shen, Jimmy-Xuan, Galazka, Zbigniew, Chou, Ta-Shun, Popp, Andreas, Albrecht, Martin, Irmscher, Klaus, Fiedler, Andreas

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Bulk single crystals and physical properties of β-(AlxGa1−x)2O3 (x = 0–0.35) grown by the Czochralski method von Galazka, Zbigniew, Fiedler, Andreas, Popp, Andreas, Ganschow, Steffen, Kwasniewski, Albert, Seyidov, Palvan, Pietsch, Mike, Dittmar, Andrea, Anooz, Saud Bin, Irmscher, Klaus, Suendermann, Manuela, Klimm, Detlef, Chou, Ta-Shun, Rehm, Jana, Schroeder, Thomas, Bickermann, Matthias

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Thermal Stability of Schottky Contacts and Rearrangement of Defects in β‐Ga2O3 Crystals von Seyidov, Palvan, Varley, Joel B., Frodason, Ymir Kalmann, Klimm, Detlef, Vines, Lasse, Galazka, Zbigniew, Chou, Ta‐Shun, Popp, Andreas, Irmscher, Klaus, Fiedler, Andreas

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Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays von Huang, Chi-Hsin, Chou, Ta-Shun, Huang, Jian-Shiou, Lin, Shih-Ming, Chueh, Yu-Lun

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High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression von Chou, Ta-Shun, Seyidov, Palvan, Bin Anooz, Saud, Grüneberg, Raimund, Rehm, Jana, Tran, Thi Thuy Vi, Fiedler, Andreas, Tetzner, Kornelius, Galazka, Zbigniew, Albrecht, Martin, Popp, Andreas

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Effect of post-metallization anneal on (100) Ga2O3/Ti–Au ohmic contact performance and interfacial degradation von Lee, Ming-Hsun, Chou, Ta-Shun, Bin Anooz, Saud, Galazka, Zbigniew, Popp, Andreas, Peterson, Rebecca L.

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Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices von Chou, Ta‐Shun, Tran, Thi Thuy Vi, Peelaers, Hartwin, Tetzner, Kornelius, Hilt, Oliver, Rehm, Jana, Bin Anooz, Saud, Fiedler, Andreas, Galazka, Zbigniew, Albrecht, Martin, Popp, Andreas

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Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach von Chou, Ta-Shun, Bin Anooz, Saud, Grüneberg, Raimund, Irmscher, Klaus, Dropka, Natasha, Rehm, Jana, Tran, Thi Thuy Vi, Miller, Wolfram, Seyidov, Palvan, Albrecht, Martin, Popp, Andreas

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Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE von Chou, Ta-Shun, Seyidov, Palvan, Bin Anooz, Saud, Grüneberg, Raimund, Tran, Thi Thuy Vi, Irmscher, Klaus, Albrecht, Martin, Galazka, Zbigniew, Schwarzkopf, Jutta, Popp, Andreas

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Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method von Galazka, Zbigniew, Ganschow, Steffen, Seyidov, Palvan, Irmscher, Klaus, Pietsch, Mike, Chou, Ta-Shun, Bin Anooz, Saud, Grueneberg, Raimund, Popp, Andreas, Dittmar, Andrea, Kwasniewski, Albert, Suendermann, Manuela, Klimm, Detlef, Straubinger, Thomas, Schroeder, Thomas, Bickermann, Matthias

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In-situ spectral reflectance investigation of hetero-epitaxially grown β-Ga2O3 thin films on c-plane Al2O3 via MOVPE process von Chou, Ta-Shun, Bin Anooz, Saud, Grüneberg, Raimund, Rehm, Jana, Akhtar, Arub, Mukherjee, Deshabrato, Petrik, Peter, Popp, Andreas

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Impurity-induced step pinning and recovery in MOVPE-grown (100) β-Ga2O3 film von Chou, Ta-Shun, Rehm, Jana, Bin Anooz, Saud, Wouters, Charlotte, Ernst, Owen, Akhtar, Arub, Galazka, Zbigniew, Albrecht, Martin, Fiedler, Andreas, Popp, Andreas

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Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (100) β-Ga2O3 thin films using in-situ reflectance spectroscopy von Chou, Ta-Shun, Bin Anooz, Saud, Grüneberg, Raimund, Tran, Thuy Vi Thi, Rehm, Jana, Galazka, Zbigniew, Popp, Andreas

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Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing von Tetzner, Kornelius, Thies, Andreas, Seyidov, Palvan, Chou, Ta-Shun, Rehm, Jana, Ostermay, Ina, Galazka, Zbigniew, Fiedler, Andreas, Popp, Andreas, Würfl, Joachim, Hilt, Oliver

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SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes von Tetzner, Kornelius, Egbo, Kingsley, Klupsch, Michael, Unger, Ralph-Stephan, Popp, Andreas, Chou, Ta-Shun, Anooz, Saud Bin, Galazka, Zbigniew, Trampert, Achim, Bierwagen, Oliver, Würfl, Joachim

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Influencing the morphological stability of MOVPE-grown β-Ga2O3 films by O2/Ga ratio von Chou, Ta-Shun, Akhtar, Arub, Bin Anooz, Saud, Rehm, Jana, Ernst, Owen, Seyidov, Palvan, Fiedler, Andreas, Miller, Wolfram, Galazka, Zbigniew, Remmele, Thilo, Albrecht, Martin, Popp, Andreas

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Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application von Rehm, Jana, Chou, Ta-Shun, Bin Anooz, Saud, Seyidov, Palvan, Fiedler, Andreas, Galazka, Zbigniew, Popp, Andreas

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Machine learning supported analysis of MOVPE grown β-Ga2O3 thin films on sapphire von Chou, Ta-Shun, Bin Anooz, Saud, Grüneberg, Raimund, Dropka, Natasha, Miller, Wolfram, Tran, Thi Thuy Vi, Rehm, Jana, Albrecht, Martin, Popp, Andreas

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