Ultralow contact resistance between semimetal and monolayer semiconductors von Shen, Pin-Chun, Su, Cong, Lin, Yuxuan, Chou, Ang-Sheng, Cheng, Chao-Ching, Park, Ji-Hoon, Chiu, Ming-Hui, Lu, Ang-Yu, Tang, Hao-Ling, Tavakoli, Mohammad Mahdi, Pitner, Gregory, Ji, Xiang, Cai, Zhengyang, Mao, Nannan, Wang, Jiangtao, Tung, Vincent, Li, Ju, Bokor, Jeffrey, Zettl, Alex, Wu, Chih-I, Palacios, Tomás, Li, Lain-Jong, Kong, Jing

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Ultrasensitive Photoresponsive Devices Based on Graphene/BiI3 van der Waals Epitaxial Heterostructures von Chang, Po‐Han, Li, Chia‐Shuo, Fu, Fang‐Yu, Huang, Kuo‐You, Chou, Ang‐Sheng, Wu, Chih‐I

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Low-defect-density WS2 by hydroxide vapor phase deposition von Wan, Yi, Li, En, Yu, Zhihao, Huang, Jing-Kai, Li, Ming-Yang, Chou, Ang-Sheng, Lee, Yi-Te, Lee, Chien-Ju, Hsu, Hung-Chang, Zhan, Qin, Aljarb, Areej, Fu, Jui-Han, Chiu, Shao-Pin, Wang, Xinran, Lin, Juhn-Jong, Chiu, Ya-Ping, Chang, Wen-Hao, Wang, Han, Shi, Yumeng, Lin, Nian, Cheng, Yingchun, Tung, Vincent, Li, Lain-Jong

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Surface modification of graphene using HBC-6ImBr in solution-processed OLEDs von Cheng, Tsung-Chin, Ku, Ting-An, Huang, Kuo-You, Chou, Ang-Sheng, Chang, Po-Han, Chang, Chao-Chen, Yue, Cheng-Feng, Liu, Chia-Wei, Wang, Po-Han, Wong, Ken-Tsung, Wu, Chih-I

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Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe2 P-Type Field-Effect Transistors von Yang, Ning, Yuxuan Cosmi Lin, Chih-Piao Chuu, Rahman, M Saifur, Wu, Tong, Ang-Sheng Chou, Hung-Yu, Chen, Wei-Yen, Woon, Liao, Szuya Sandy, Huang, Shengxi, Qian, Xiaofeng, Guo, Jing, Radu, Iuliana, H-S, Philip Wong, Wang, Han

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Ultrahigh Responsivity and Detectivity Graphene–Perovskite Hybrid Phototransistors by Sequential Vapor Deposition von Chang, Po-Han, Liu, Shang-Yi, Lan, Yu-Bing, Tsai, Yi-Chen, You, Xue-Qian, Li, Chia-Shuo, Huang, Kuo-You, Chou, Ang-Sheng, Cheng, Tsung-Chin, Wang, Juen-Kai, Wu, Chih-I

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High On-State Current in Chemical Vapor Deposited Monolayer MoS2 nFETs With Sn Ohmic Contacts von Chou, Ang-Sheng, Cheng, Chao-Ching, Liew, San-Lin, Ho, Po-Hsun, Wang, Shih-Yun, Chang, Yu-Chen, Chang, Che-Kang, Su, Yuan-Chun, Huang, Zheng-Da, Fu, Fang-Yu, Hsu, Chen-Feng, Chung, Yun-Yan, Chang, Wen-Hao, Li, Lain-Jong, Wu, Chih-I

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Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors von Wu, Wen-Chia, Hung, Terry Y. T., Sathaiya, D. Mahaveer, Arutchelvan, Goutham, Hsu, Chen-Feng, Su, Sheng-Kai, Chou, Ang Sheng, Chen, Edward, Shen, Yun-Yang, Liew, San Lin, Hou, Vincent, Lee, T. Y., Cai, Jin, Wu, Chung-Cheng, Wu, Jeff, Wong, H.-S. Philip, Cheng, Chao-Ching, Chang, Wen-Hao, Radu, Iuliana P., Chien, Chao-Hsin

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Van Der Waals Epitaxy: Ultrasensitive Photoresponsive Devices Based on Graphene/BiI3 van der Waals Epitaxial Heterostructures (Adv. Funct. Mater. 23/2018) von Chang, Po‐Han, Li, Chia‐Shuo, Fu, Fang‐Yu, Huang, Kuo‐You, Chou, Ang‐Sheng, Wu, Chih‐I

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Ultrathin quasi-2D amorphous carbon dielectric prepared from solution precursor for nanoelectronics von An, Fufei, Wang, Congjun, Pham, Viet Hung, Borisevich, Albina, Qian, Jiangchao, Yin, Kaijun, Pidaparthy, Saran, Robinson, Brian, Chou, Ang-Sheng, Lee, Junseok, Weidman, Jennifer, Natesakhawat, Sittichai, Wang, Han, Schleife, André, Zuo, Jian-Min, Matranga, Christopher, Cao, Qing

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Investigating and optimizing charge transfer between graphene and metal by using double layer electrode and polymer-free transfer method von Huang, Kuo-You, Li, Chia-Shuo, Wen, Luo-Hong, Chou, Ang-Sheng, Ho, Mon-Shu, Wu, Chih-I

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Area-Selective Growth of Two-Dimensional Mono- And Bilayer WS2 for Field Effect Transistors von Huang, Lin-Yun, Li, Ming-Yang, Liew, San-Lin, Lin, Shih-Chu, Chou, Ang-Sheng, Hsu, Ming-Chun, Hsu, Ching-Hao, Lin, Yu-Tung, Mao, Po-Sen, Hou, Duen-Huei, Liu, Wei-Cheng, Wu, Chih-I, Chang, Wen-Hao, Wang, Han, Li, Lain-Jong, Wei, Kung-Hwa

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Antimony–Platinum Modulated Contact Enabling Majority Carrier Polarity Selection on a Monolayer Tungsten Diselenide Channel von Lin, Yu-Tung, Hsu, Ching-Hao, Chou, Ang-Sheng, Fong, Zi-Yun, Chuu, Chih-Piao, Chang, Shu-Jui, Hsu, Yu-Wei, Chou, Sui-An, Liew, San Lin, Chiu, Ting-Ying, Hou, Fa-Rong, Ni, I-Chih, Hou, Duen-Huei Vincent, Cheng, Chao-Ching, Radu, Iuliana P., Wu, Chih-I

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Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe 2 P-Type Field-Effect Transistors von Yang, Ning, Lin, Yuxuan Cosmi, Chuu, Chih-Piao, Rahman, M. Saifur, Wu, Tong, Chou, Ang-Sheng, Chen, Hung-Yu, Woon, Wei-Yen, Liao, Szuya Sandy, Huang, Shengxi, Qian, Xiaofeng, Guo, Jing, Radu, Iuliana, Wong, H.-S. Philip, Wang, Han

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Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe } P-Type Field-Effect Transistors von Yang, Ning, Lin, Yuxuan Cosmi, Chuu, Chih-Piao, Rahman, M. Saifur, Wu, Tong, Chou, Ang-Sheng, Chen, Hung-Yu, Woon, Wei-Yen, Liao, Szuya Sandy, Huang, Shengxi, Qian, Xiaofeng, Guo, Jing, Radu, Iuliana, Wong, H.-S. Philip, Wang, Han

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Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS 2 Channel Transistors von Wu, Wen-Chia, Hung, Terry Y. T., Sathaiya, D. Mahaveer, Arutchelvan, Goutham, Hsu, Chen-Feng, Su, Sheng-Kai, Chou, Ang Sheng, Chen, Edward, Shen, Yun-Yang, Liew, San Lin, Hou, Vincent, Lee, T. Y., Cai, Jin, Wu, Chung-Cheng, Wu, Jeff, Wong, H.-S. Philip, Cheng, Chao-Ching, Chang, Wen-Hao, Radu, Iuliana P., Chien, Chao-Hsin

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Ultrasensitive Photoresponsive Devices Based on Graphene/BiI 3 van der Waals Epitaxial Heterostructures von Chang, Po‐Han, Li, Chia‐Shuo, Fu, Fang‐Yu, Huang, Kuo‐You, Chou, Ang‐Sheng, Wu, Chih‐I

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Van Der Waals Epitaxy: Ultrasensitive Photoresponsive Devices Based on Graphene/BiI 3 van der Waals Epitaxial Heterostructures (Adv. Funct. Mater. 23/2018) von Chang, Po‐Han, Li, Chia‐Shuo, Fu, Fang‐Yu, Huang, Kuo‐You, Chou, Ang‐Sheng, Wu, Chih‐I

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High On-State Current in Chemical Vapor Deposited Monolayer MoS 2 nFETs With Sn Ohmic Contacts von Chou, Ang-Sheng, Cheng, Chao-Ching, Liew, San-Lin, Ho, Po-Hsun, Wang, Shih-Yun, Chang, Yu-Chen, Chang, Che-Kang, Su, Yuan-Chun, Huang, Zheng-Da, Fu, Fang-Yu, Hsu, Chen-Feng, Chung, Yun-Yan, Chang, Wen-Hao, Li, Lain-Jong, Wu, Chih-I

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Area-Selective Growth of Two-Dimensional Mono- And Bilayer WS 2 for Field Effect Transistors von Huang, Lin-Yun, Li, Ming-Yang, Liew, San-Lin, Lin, Shih-Chu, Chou, Ang-Sheng, Hsu, Ming-Chun, Hsu, Ching-Hao, Lin, Yu-Tung, Mao, Po-Sen, Hou, Duen-Huei, Liu, Wei-Cheng, Wu, Chih-I, Chang, Wen-Hao, Wang, Han, Li, Lain-Jong, Wei, Kung-Hwa

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