Physical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser deposition von Tian, F., Chor, E.F.

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An Investigation of the Effects of Emitter Pre-Deposition Temperature in Double-Diffued Polysilicon Emitter Bipolar Transistors von Chor, E.F, Chen, C.P, Tan, L.S

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Pulsed laser annealing of Be-implanted GaN von Wang, H. T., Tan, L. S., Chor, E. F.

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Schottky Barrier Height Modulation of Nickel-Dysprosium-Alloy Germanosilicide Contacts for Strained P-FinFETs von Sinha, M., Lee, R.T.P., Chor, E.F., Yee-Chia Yeo

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Quasi-two-dimensional transmission line model (QTD-TLM) for planar ohmic contact studies von Chor, E.F., Lerdworatawee, J.

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Effects of surface plasma treatment on n-GaN ohmic contact formation von Li, L.K, Tan, L.S, Chor, E.F

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Study of activation of beryllium implantation in gallium nitride von Wang, H.T, Tan, L.S, Chor, E.F

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AlGaN/GaN high electron mobility transistors with implanted ohmic contacts von Wang, H.T., Tan, L.S., Chor, E.F.

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Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique von Cha, C.L., Chor, E.F., Gong, H., Zhang, A.Q., Chan, L., Xie, J.

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Emitter resistance of arsenic- and phosphorus-doped polysilicon emitter transistors von Chor, E.F., Ashburn, P., Brunnschweiler, A.

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Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's von Chor, E.F., Malik, R.J., Hamm, R.A., Ryan, R.

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Does short wavelength lithography process degrade the integrity of thin gate oxide? von Kim, S.J., Cho, B.J., Chong, P.F., Chor, E.F., Ang, C.H., Ling, C.H., Joo, M.S., Yeo, I.S.

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Analytical and numerical studies of the dependence of high frequency performance on the use of a polysilicon emitter in bipolar transistors von Chor, E.F., Tan, L.S.

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A COMPOUND EMITTER HETEROJUNCTION BIPOLAR TRANSISTOR von Chor, E.F., Peng, C.J.

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A NUMERICAL STUDY OF THE DEPENDENCE OF UNITY GAIN BANDWIDTH fT ON POLYSILICON EMITTER IN BIPOLAR TRANSISTORS von CHOR, E.F., TAN, L.S.

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Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication von Ong, S.Y., Chor, E.F., Leung, Y.K., Lee, James, Li, W.S., See, Alex, Chan, Lap

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Breakdown of reoxidized nitrided oxide (ONO) in flash memory devices upon current stressing von Cha, C.L., Chor, E.F., Gong, H., Zhang, A.Q., Chan, L.

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(Pd, Ti, Au)-based ohmic contacts to p- and n-doped In/sub 0.53/Ga/sub 0.47/As von Chong, W.K., Chor, E.F., Heng, C.H., Chua, S.J.

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Characterization of microtrenching on 0.13/spl mu/m NMOS and PMOS transistors using DAHC and edge FN stress von Chua, C.S., Chor, E.F., Ang, C.H., Tan, J., Goh, F., Yu, J., Pradeep, Y., See, A., Chan, L.

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Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damage von Cha, C.L., Chor, E.F., Gong, H., Zhang, A.Q., Dong, Z., Chan, L.

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