Extraction of intrinsic contact resistance in organic thin-film transistors with single channel length and high capacitance density von Kim, Gunhee, Fuentes-Hernandez, Canek, Choi, Sangmoo, Jia, Xiaojia, Kippelen, Bernard

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Solution-based electrical doping of semiconducting polymer films over a limited depth von Kolesov, Vladimir A., Fuentes-Hernandez, Canek, Chou, Wen-Fang, Aizawa, Naoya, Larrain, Felipe A., Wang, Ming, Perrotta, Alberto, Choi, Sangmoo, Graham, Samuel, Bazan, Guillermo C., Nguyen, Thuc-Quyen, Marder, Seth R., Kippelen, Bernard

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A Study on Reducing Contact Resistance in Solution-Processed Organic Field-Effect Transistors von Choi, Sangmoo, Fuentes-Hernandez, Canek, Wang, Cheng-Yin, Khan, Talha M, Larrain, Felipe A, Zhang, Yadong, Barlow, Stephen, Marder, Seth R, Kippelen, Bernard

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Stable Organic Field-Effect Transistors for Continuous and Nondestructive Sensing of Chemical and Biologically Relevant Molecules in Aqueous Environment von Yun, Minseong, Sharma, Asha, Fuentes-Hernandez, Canek, Hwang, Do Kyung, Dindar, Amir, Singh, Sanjeev, Choi, Sangmoo, Kippelen, Bernard

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Influence of Intercell Trapped Charge on Vertical NAND Flash Memory von Choi, Woo Young, Kwon, Hyug Su, Kim, Yong Jun, Lee, Byungin, Yoo, Hyunseung, Choi, Sangmoo, Cho, Gyu-Seog, Park, Sung-Kye

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Organic field-effect transistor circuits using atomic layer deposited gate dielectrics patterned by reverse stamping von SANGMOO CHOI, FUENTES-HERNANDEZ, Canek, MINSEONG YUN, DINDAR, Amir, KHAN, Talha M, WANG, Cheng-Yin, KIPPELEN, Bernard

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New Pixel Circuit Design Employing an Additional Pixel Line Insertion in AMOLED Displays Composed by Excimer Laser-Crystallized TFTs von Jin, Guanghai, Choi, Sangmoo, Kim, Moojin, Kim, Sungchul, Song, Jonghyun

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Multi-layered Vertical Gate NAND Flash overcoming stacking limit for terabit density storage von Wonjoo Kim, Sangmoo Choi, Junghun Sung, Taehee Lee, Chulmin Park, Hyoungsoo Ko, Juhwan Jung, Inkyong Yoo, Yoondong Park

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Highly thermally stable TiN nanocrystals as charge trapping sites for nonvolatile memory device applications von Choi, Sangmoo, Kim, Seok-Soon, Chang, Man, Hwang, Hyunsang, Jeon, Sanghun, Kim, Chungwoo

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Impact of metal work function on memory properties of charge-trap flash memory devices using fowler-nordheim P/E mode von JEON, Sanghun, JEONG HEE HAN, LEE, Junghoon, CHOI, Sangmoo, HWANG, Hyunsang, KIM, Chungwoo

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Formation of TaN nanocrystals embedded in silicon nitride by phase separation methods for nonvolatile memory applications von Choi, Hyejung, Jung, Seung-Jae, Park, Hokyung, Lee, Joon-Myung, Kwon, Moonjae, Chang, Man, Hasan, Musarrat, Choi, Sangmoo, Hwang, Hyunsang

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P‐1: Uni‐Color Column Line Pentile‐Type Pixel Arrangement Design for Low Driving Power Consumption AMOLED Displays von Choi, Sangmoo, Song, Janghoon, Chang, Sun-il, Karri, Jyothi, Bita, Ion

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Improved Conductance Method for Determining Interface Trap Density of Metal–Oxide–Semiconductor Device with High Series Resistance von Yang, Hyundoek, Son, Yunik, Choi, Sangmoo, Hwang, Hyunsang

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High work-function metal gate and high-[kappa] dielectrics for charge trap flash memory device applications von Sanghun Jeon, Sanghun Jeon, Jeong Hee Han, Jeong Hee Han, Jung Hoon Lee, Jung Hoon Lee, Sangmoo Choi, Sangmoo Choi, Hyunsang Hwang, Hyunsang Hwang, Chungwoo Kim, Chungwoo Kim

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Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates von Wang, Cheng-Yin, Fuentes-Hernandez, Canek, Liu, Jen-Chieh, Dindar, Amir, Choi, Sangmoo, Youngblood, Jeffrey P, Moon, Robert J, Kippelen, Bernard

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Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition von Wang, Cheng-Yin, Fuentes-Hernandez, Canek, Yun, Minseong, Singh, Ankit, Dindar, Amir, Choi, Sangmoo, Graham, Samuel, Kippelen, Bernard

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High work-function metal gate and high-/spl kappa/ dielectrics for charge trap flash memory device applications von Jeon, Sanghun, Han, Jeong Hee, Lee, Jung Hoon, Choi, Sangmoo, Hwang, Hyunsang, Kim, Chungwoo

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Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition von Wang, Cheng-Yin, Fuentes-Hernandez, Canek, Yun, Minseong, Singh, Ankit, Dindar, Amir, Choi, Sangmoo, Graham, Samuel, Kippelen, Bernard

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DISPLAY DEVICE WITH VARIABLE POWER CONSUMPTION von CHOI, Sangmoo

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Effective Work Function of Scandium Nitride Gate Electrodes on SiO 2 and HfO 2 von Yang, Hyundoek, Heo, Sungho, Lee, Dongkyu, Choi, Sangmoo, Hwang, Hyunsang

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