Treffer 1 - 20 von 10.538 für Suche 'Choi, Jeong Kyu', Suchdauer: 1,25s Treffer weiter einschränken
  1. 1
    Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel

    Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel von Lee, Dong-Hee, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yang, Jong-Heon, Hwang, Chi-Sun, Yoon, Sung-Min

    Veröffentlicht in IEEE electron device letters

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  2. 2
    Performance Enhancement of Self-Aligned Coplanar TFTs with ALD-IGZO Channels via Effective Doping from Interlayer Dielectric

    Performance Enhancement of Self-Aligned Coplanar TFTs with ALD-IGZO Channels via Effective Doping from Interlayer Dielectric von Moon, Seo-Hyun, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yoon, Sung-Min

    Veröffentlicht in IEEE electron device letters

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  3. 3
    Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers

    Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers von Cho, Yun-Ju, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Kim, Hee-Ok, Yang, Jong-Heon, Hwang, Chi-Sun, Yoon, Sung-Min


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  4. 4
    Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Sn-O Channels With Various Channel Compositions

    Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Sn-O Channels With Various Channel Compositions von Noh, Shin-Ho, Kim, Hyo-Eun, Yang, Jong-Heon, Kim, Yong-Hae, Kwon, Young-Ha, Seong, Nak-Jin, Hwang, Chi-Sun, Choi, Kyu-Jeong, Yoon, Sung-Min


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  5. 5
    Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers

    Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel... von Ahn, Hyun-Min, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Hwang, Chi-Sun, Yoon, Sung-Min

    Veröffentlicht in Electronic materials letters

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  6. 6
    Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O

    Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O von Ahn, Hyun-Min, Moon, Seo-Hyun, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Hwang, Chi-Sun, Yang, Jong-Heon, Kim, Yong-Hae, Yoon, Sung-Min

    Veröffentlicht in IEEE electron device letters

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  7. 7
    Insights on Asymmetrical Electrode Geometric Effect to Enhance Gate-Drain-Bias Stability of Vertical-Channel InGaZnO Thin-Film Transistor

    Insights on Asymmetrical Electrode Geometric Effect to Enhance Gate-Drain-Bias Stability of Vertical-Channel InGaZnO Thin-Film Transistor von Lee, Dong-Hee, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yang, Jong-Heon, Hwang, Chi-Sun, Yoon, Sung-Min

    Veröffentlicht in Electronic materials letters

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  8. 8
    Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory

    Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory von PARK, Il-Mok, JUNG, Jung-Kyu, RYU, Sang-Ouk, CHOI, Kyu-Jeong, YU, Byoung-Gon, PARK, Young-Bae, SEUNG MIN HAN, JOO, Young-Chang

    Veröffentlicht in Thin solid films

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  9. 9
    Sb-Se-based phase-change memory device with lower power and higher speed operations

    Sb-Se-based phase-change memory device with lower power and higher speed operations von Sung-Min Yoon, Nam-Yeal Lee, Sang-Ouk Ryu, Kyu-Jeong Choi, Park, Y.-S., Seung-Yun Lee, Byoung-Gon Yu, Myung-Jin Kang, Se-Young Choi, Wuttig, M.

    Veröffentlicht in IEEE electron device letters

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  10. 10
    Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2gate insulator

    Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2gate insulator von Ryoo, Hyun-Joo, Seong, Nak-Jin, Choi, Kyu-Jeong, Yoon, Sung-Min

    Veröffentlicht in Nanotechnology

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  11. 11
    Device-level XPS analysis for physical and electrical characterization of oxide-channel thin-film transistors

    Device-level XPS analysis for physical and electrical characterization of oxide-channel thin-film transistors von Cho, Yun-Ju, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Lee, Myung Keun, Kim, Gyungtae, Yoon, Sung-Min

    Veröffentlicht in Journal of applied physics

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  12. 12
    Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO2 Electrolyte Gate Insulator

    Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO2 Electrolyte Gate Insulator von Kim, Dong-Hee, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yoon, Sung-Min


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  13. 13
    The effect of antimony-doping on Ge2Sb2Te5, a phase change material

    The effect of antimony-doping on Ge2Sb2Te5, a phase change material von CHOI, Kyu-Jeong, YOON, Sung-Min, LEE, Nam-Yeal, LEE, Seung-Yun, PARK, Young-Sam, YU, Byoung-Gon, RYU, Sang-Ouk

    Veröffentlicht in Thin solid films

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  14. 14
    Synergic strategies of composition-modified bilayer channel configuration and ozone-processed gate stacks for atomic-layer deposited In-Ga-Zn-O thin-film transistors

    Synergic strategies of composition-modified bilayer channel configuration and ozone-processed gate stacks for atomic-layer deposited In-Ga-Zn-O thin-film transistors von Bae, Soo-Hyun, Moon, Seo-Hyun, Kwon, Young Ha, Nak-Jin-Seong, Choi, Kyu-Jeong, Yoon, Sung-Min

    Veröffentlicht in Journal of alloys and compounds

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  15. 15
    Comparative studies on vertical-channel charge-trap memory thin-film transistors using In-Ga-Zn-O active channels deposited by sputtering and atomic layer depositions

    Comparative studies on vertical-channel charge-trap memory thin-film transistors using In-Ga-Zn-O active channels deposited by sputtering and atomic layer depositions von Kim, Hyeong-Rae, Kim, Gi-Heon, Seong, Nak-Jin, Choi, Kyu-Jeong, Kim, Sang-Kyun, Yoon, Sung-Min

    Veröffentlicht in Nanotechnology

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  16. 16
    Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

    Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Cha... von Bae, Soo-Hyun, Yang, Jong-Heon, Kim, Yong-Hae, Kwon, Young Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Hwang, Chi-Sun, Yoon, Sung-Min


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  17. 17
    Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In–Ga–Zn–O bilayer channel configuration

    Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In–Ga–Zn–O bilayer channel configuration von Ahn, Hyun-Min, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Hwang, Chi-Sun, Yang, Jong-Heon, Kim, Yong-Hae, Kim, Gyungtae, Yoon, Sung-Min

    Veröffentlicht in Nanotechnology

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  18. 18
    Characterization of nanoscale vertical-channel charge-trap memory thin film transistors using oxide semiconducting active and trap layers

    Characterization of nanoscale vertical-channel charge-trap memory thin film transistors using oxide semiconducting active and trap layers von Bae, Soo-Hyun, Ryoo, Hyun-Joo, Seong, Nak-Jin, Choi, Kyu-Jeong, Kim, Gi-Heon, Yoon, Sung-Min


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  19. 19
    Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition

    Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition von Noh, Shin-Ho, Kim, Hyo-Eun, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yoon, Sung-Min


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  20. 20
    Combination of InZnO/InGaZnO Bi-layered channels prepared by atomic layer deposition and ozone-based gate-stack formation for guaranteeing high field-effect mobility and long-term stability of thin film transistors

    Combination of InZnO/InGaZnO Bi-layered channels prepared by atomic layer deposition and ozone-based gate-stack formation for guaranteeing high field-effect mobility and long-term... von Moon, Seo-Hyun, Bae, Soo-Hyun, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yoon, Sung-Min

    Veröffentlicht in Ceramics international

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