Effects of Hf buffer layer at the Y-doped HfO2/Si interface on ferroelectric characteristics of Y-doped HfO2 films formed by reactive sputtering von Zhang, Yu, Xu, Jun, Zhou, Da-Yu, Wang, Hang-Hang, Lu, Wen-Qi, Choi, Chi-Kyu

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Investigation of temperature-dependent ferroelectric properties of Y-doped HfO2 thin film prepared by medium-frequency reactive magnetron co-sputtering von Zhang, Yu, Xu, Jun, Choi, Chi-Kyu, Fang, Zhen-Xing, Li, Ping, Yuan, Longfei, Chen, Lei

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Effect of bias voltage on Diamond-like carbon film deposited on PMMA substrate von Lin, Zeng, Lv, Shao-Bo, Yu, Zhao-Ji, Li, Ming, Lin, Tie-Yuan, Ba, De-Chun, Choi, Chi-Kyu, Lee, In-Seop

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Studies on the low dielectric SiOC(–H) thin films deposited using MTMS and oxygen as precursors by UV source assisted PECVD von Yang, Chang Sil, Kannan, Meera, Kyu Choi, Chi

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Electrical properties of ZnO-based bottom-gate thin film transistors fabricated by using radio frequency magnetron sputtering von Navamathavan, R., Choi, Chi Kyu, Park, Seong-Ju

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Photodissociation effects on the electron density and on FTIR measurements in a BTMSM/Ar discharge von Bong Jung, Won, Jun Jang, Yong, Kyu Choi, Chi, Young Chang, Hong

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Characteristics of low-k SiOC(-H) films deposited at various substrate temperature by PECVD using DMDMS/O2 precursor von CHANG YOUNG KIM, SEUNG HYUN KIM, NAVAMATHAVAN, R, CHI KYU CHOI, WON YOUNG JEUNG

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The effects of UV radiation on SiC(O)N/SiOC(−H) thin films grown on Si substrates using plasma-enhanced atomic layer deposition von Navamathavan, R., Kim, Chang Young, Lee, Heon Ju, Yu, YoungHun, Choi, Chi Kyu

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Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering von Navamathavan, R., Choi, Chi Kyu, Yang, Eun-Jeong, Lim, Jae-Hong, Hwang, Dae-Kue, Park, Seong-Ju

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Ultraviolet irradiation effect on the properties of leakage current and dielectric breakdown of low-dielectric-constant SiOC( H) films using comb capacitor structure von Kim, Chang Young, Navamathavan, R., Lee, Heang Seuk, Woo, Jong-Kwan, Hyun, Myung Taek, Lee, Kwang-Man, Jeung, Won Young, Choi, Chi Kyu

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Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and electrical properties von Zhang, Yu, Xu, Jun, Wang, You-Nian, Choi, Chi Kyu, Zhou, Da-Yu

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Study of Cu diffusion behavior in low dielectric constant SiOC(–H) films deposited by plasma-enhanced chemical vapor deposition von Choi, Chi Kyu, Lee, Heang Seuk, Navamathavan, R., Woo, Jong-Kwan, Kim, Chang Young

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Plasma enhanced chemical vapor deposition of low dielectric constant SiOC(-H) films using MTES/O2 precursor von NAVAMATHAVAN, R, CHI KYU CHOI

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Effect of catalyst for nickel films for NiSi formation with improved interface roughness von Kang, Hee-Sung, Ha, Jong-Bong, Lee, Jung-Hee, Choi, Chi Kyu, Lee, Jeong Yong, Lee, Kwang-Man

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Electrical characterization of low-k films with nano-pore structure prepared with DMDMOS/O2 precursors von Kim, Chang Young, Navamathavan, R., Lee, Heon Ju, Choi, Chi Kyu

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Effect of evaporated copper and aluminum on post-annealed SiOC(–H) films deposited using plasma-enhanced chemical vapor deposition von Kim, Chang Young, Lee, Heang Seuk, Navamathavan, R., Woo, Jong-Kwan, Choi, Chi Kyu

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Plasma characteristics of low-k SiOC(–H) films prepared by using plasma enhanced chemical vapor deposition from DMDMS/O2 precursors von Jung, An Soo, Navamathavan, R., Lee, Kwang Man, Choi, Chi Kyu

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Low dielectric constant CF/SiOF composite film deposition in a helicon plasma reactor von Yun, Seok-Min, Chang, Hong-Young, Kang, Min-Sung, Choi, Chi-Kyu

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Structural characterization and electro-physical properties for SiOC(–H) low-k dielectric films von Zakirov, A.S., Khabibullaev, P.K., Choi, Chi Kyu

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Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition von Kim, Chang Young, Lee, Hong Seok, Choi, Chi Kyu, Yu, Young Hun, Navamathavan, R., Lee, Heon Ju

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