X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling von Jeong, Junhyung, Cho, Kyujun, Ji, Honggu, Chang, Woojin, Lee, Jongmin, Min, Byoung‐gue, Kang, Dongmin

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Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode von Lee, Hoon-Ki, Janardhanam, V., Chang, Woojin, Cho, Kyujun, Choi, Chel-Jong, Mun, Jae Kyoung

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The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors von Kim, Junhyung, Lee, Gyejung, Cho, Kyujun, Park, Jong Yul, Min, Byoung-Gue, Jeong, Junhyung, Ji, Hong-Gu, Chang, Woojin, Lee, Jong-Min, Kang, Dong-Min

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Editors' Choice—2.32 kV Breakdown Voltage Lateral β-Ga 2 O 3 MOSFETs with Source-Connected Field Plate von Mun, Jae Kyoung, Cho, Kyujun, Chang, Woojin, Jung, Hyun-Wook, Do, Jaewon

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Editors' Choice-2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate von Mun, Jae Kyoung, Cho, Kyujun, Chang, Woojin, Jung, Hyun-Wook, Do, Jaewon

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