Universal strain engineering for enhancing the hole mobility and dopability in p-type semiconductors von Hu, Yaoqiao, Cho, Kyeongjae

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Rational Design of Na(Li1/3Mn2/3)O2 Operated by Anionic Redox Reactions for Advanced Sodium‐Ion Batteries von Kim, Duho, Cho, Maenghyo, Cho, Kyeongjae

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The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces von Gong, Cheng, Colombo, Luigi, Wallace, Robert M, Cho, Kyeongjae

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Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors von Gong, Cheng, Zhang, Hengji, Wang, Weihua, Colombo, Luigi, Wallace, Robert M., Cho, Kyeongjae

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Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors von Ryou, Junga, Kim, Yong-Sung, KC, Santosh, Cho, Kyeongjae

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Impact of intrinsic atomic defects on the electronic structure of MoS2 monolayers von KC, Santosh, Longo, Roberto C, Addou, Rafik, Wallace, Robert M, Cho, Kyeongjae

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Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films von Chae, Kisung, Hwang, Jeongwoon, Chagarov, Evgueni, Kummel, Andrew, Cho, Kyeongjae

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First principles calculations of intrinsic mobilities in tin-based oxide semiconductors SnO, SnO2, and Ta2SnO6 von Hu, Yaoqiao, Hwang, Jeongwoon, Lee, Yeonghun, Conlin, Patrick, Schlom, Darrell G., Datta, Suman, Cho, Kyeongjae

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MoS2 functionalization for ultra-thin atomic layer deposited dielectrics von Azcatl, Angelica, McDonnell, Stephen, K. C., Santosh, Peng, Xin, Dong, Hong, Qin, Xiaoye, Addou, Rafik, Mordi, Greg I., Lu, Ning, Kim, Jiyoung, Kim, Moon J., Cho, Kyeongjae, Wallace, Robert M.

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The Role of Oxygen during Thermal Reduction of Graphene Oxide Studied by Infrared Absorption Spectroscopy von Acik, Muge, Lee, Geunsik, Mattevi, Cecilia, Pirkle, Adam, Wallace, Robert M, Chhowalla, Manish, Cho, Kyeongjae, Chabal, Yves

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Surface oxidation energetics and kinetics on MoS2 monolayer von KC, Santosh, Longo, Roberto C., Wallace, Robert M., Cho, Kyeongjae

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Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors von Si, Mengwei, Hu, Yaoqiao, Lin, Zehao, Sun, Xing, Charnas, Adam, Zheng, Dongqi, Lyu, Xiao, Wang, Haiyan, Cho, Kyeongjae, Ye, Peide D.

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ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors von Lee, Lynn, Hwang, Jeongwoon, Jung, Jin Won, Kim, Jongchan, Lee, Ho-In, Heo, Sunwoo, Yoon, Minho, Choi, Sungju, Van Long, Nguyen, Park, Jinseon, Jeong, Jae Won, Kim, Jiyoung, Kim, Kyung Rok, Kim, Dae Hwan, Im, Seongil, Lee, Byoung Hun, Cho, Kyeongjae, Sung, Myung Mo

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Kinetic Stability of Bulk LiNiO2 and Surface Degradation by Oxygen Evolution in LiNiO2‐Based Cathode Materials von Kong, Fantai, Liang, Chaoping, Wang, Luhua, Zheng, Yongping, Perananthan, Sahila, Longo, Roberto C., Ferraris, John P., Kim, Moon, Cho, Kyeongjae

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Near-unity photoluminescence quantum yield in MoS2 von Matin Amani, Der-Hsien, Lien, Kiriya, Daisuke, Xiao, Jun, Azcatl, Angelica, Noh, Jiyoung, Madhvapathy, Surabhi R, Addou, Rafik, Santosh, K C, Dubey, Madan, Cho, Kyeongjae, Wallace, Robert M, Si-Chen, Lee, Jr-Hau He, Ager, Joel W, Zhang, Xiang, Yablonovitch, Eli

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A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS2–Metal Junction von Yang, Zheng, Kim, Changsik, Lee, Kwang Young, Lee, Myeongjin, Appalakondaiah, Samudrala, Ra, Chang‐Ho, Watanabe, Kenji, Taniguchi, Takashi, Cho, Kyeongjae, Hwang, Euyheon, Hone, James, Yoo, Won Jong

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Quantum-Confined Electronic States Arising from the Moiré Pattern of MoS2–WSe2 Heterobilayers von Pan, Yi, Fölsch, Stefan, Nie, Yifan, Waters, Dacen, Lin, Yu-Chuan, Jariwala, Bhakti, Zhang, Kehao, Cho, Kyeongjae, Robinson, Joshua A, Feenstra, Randall M

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Thermal conductivity of isotopically modified graphene von Chen, Shanshan, Wu, Qingzhi, Mishra, Columbia, Kang, Junyong, Zhang, Hengji, Cho, Kyeongjae, Cai, Weiwei, Balandin, Alexander A., Ruoff, Rodney S.

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Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments von McDonnell, Stephen, Azcatl, Angelica, Addou, Rafik, Gong, Cheng, Battaglia, Corsin, Chuang, Steven, Cho, Kyeongjae, Javey, Ali, Wallace, Robert M

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Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene von Qiu, Gang, Wang, Yixiu, Nie, Yifan, Zheng, Yongping, Cho, Kyeongjae, Wu, Wenzhuo, Ye, Peide D

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