PI3K Inhibitor Increased Radiosensitizing Effect of PARP Inhibitor in BRCA-Proficient Triple Negative Breast Cancer Cells von Kim, I.A, Jang, N.Y, Kim, D.H, Cho, B.J, Choi, E.J

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Automated classification of cervical neoplasms through colposcopic photography using machine learning von Cho, B.J., Park, S.T.

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Outcomes Following Re-irradiation for Recurrent Nasopharyngeal Carcinoma: A Single-Institution Experience von Karam, I, Huang, S.H, McNiven, A, Su, S, Xu, W, Waldron, J, Bayley, A.J, Kim, J, Cho, B.J, Ringash, J, Hope, A, O'Sullivan, B, Giuliani, M

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Dark-Current Suppression in Metal-Germanium-Metal Photodetectors Through Dopant-Segregation in NiGe-Schottky Barrier von Zang, H., Lee, S.J., Loh, W.Y., Wang, J., Chua, K., Yu, M.B., Cho, B.J., Lo, G.Q., Kwong, D.-L.

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Thermal instability of effective work function in metal/high-κ stack and its material dependence von MOON SIG JOO, BYUNG JIN CHO, BALASUBRAMANIAN, N, KWONG, Dim-Lee

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Quantifying the Benefits of Adaptive Radiotherapy on Lung Sparing for Thoracic Tumors von Cho, B.J, Bezjak, A, Brade, A, Hope, A, Sun, A

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Thermally stable fully silicided Hf-silicide metal-gate electrode von Park, C.S., Cho, B.J., Kwong, D.-L.

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Dosimetric and Clinical Parameters Contributing to Esophagitis and Radiation Pneumonitis following Treatment for Small-cell Lung Carcinoma von Hope, A.J, Giuliani, M, Ma, C, Bezjak, A, Sun, A, Brade, A, Cho, B.J, Leighl, N, Shepherd, F, Lindsay, P.E

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Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film von Balasubramanian, M, Bera, L K, Mathew, S, Balasubramanian, N, Lim, V, Joo, M S, Cho, B J

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Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs von Mathew, Shajan, Bera, L.K., Balasubramanian, N., Joo, M.S., Cho, B.J.

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Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition von Chen, X. Y., Lu, Y. F., Tang, L. J., Wu, Y. H., Cho, B. J., Xu, X. J., Dong, J. R., Song, W. D.

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Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage Layer von Yan-Ny Tan, Chim, W.-K., Byung Jin Cho, Wee-Kiong Choi

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Accuracy study of a robotic system for MRI-guided prostate needle placement von Seifabadi, Reza, Cho, Nathan B. J., Song, Sang-Eun, Tokuda, Junichi, Hata, Nobuhiko, Tempany, Clare M., Fichtinger, Gabor, Iordachita, Iulian

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Berberine Inhibits the Production of Lysophosphatidylcholine-induced Reactive Oxygen Species and the ERK1/2 Pathway in Vascular Smooth Muscle Cells von Cho, B.J. (Yonsei University, Seoul, Republic of Korea), Im, E.K. (Yonsei University, Seoul, Republic of Korea), Kwon, J.H. (Yonsei University, Seoul, Republic of Korea), Lee, K.H. (Yonsei University, Seoul, Republic of Korea), Shin, H.J. (Yonsei University, Seoul, Republic of Korea), Oh, J.W. (Yonsei University, Seoul, Republic of Korea), Kang, S.M. (Yonsei University, Seoul, Republic of Korea), Chung, J.H. (Yonsei University, Seoul, Republic of Korea), E-mail: jhchung@yonsei.ac.kr, Jang, Y.S. (Yonsei University, Seoul, Republic of Korea)

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MOS Characteristics of Synthesized HfAlON–HfO $_2$ Stack Using AlN–HfO $_2 von Park, C.S., Cho, B.J., Kwong, D.-L.

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Correlation between optical properties and Si nanocrystal formation of Si-rich Si oxide films prepared by plasma-enhanced chemical vapor deposition von Chen, X.Y., Lu, Y.F., Wu, Y.H., Cho, B.J., Tang, L.J., Lu, D., Dong, J.R.

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Demonstration of High-Performance PMOSFETs Using \hbox- \hbox\hbox - \hbox Quantum Wells With High- \kappa/Metal-Gate Stacks von Majhi, P., Kalra, P., Harris, R., Choi, K.J., Heh, D., Oh, J., Kelly, D., Choi, R., Cho, B.J., Banerjee, S., Tsai, W., Tseng, H., Jammy, R.

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Demonstration of High-Performance PMOSFETs Using [Formula Omitted]-[Formula Omitted] -[Formula Omitted] Quantum Wells With High- [Formula Omitted]/Metal-Gate Stacks von Majhi, P, Kalra, P, Harris, R, Choi, K.J, Heh, D, Oh, J, Kelly, D, Choi, R, Cho, B.J, Banerjee, S, Tsai, W, Tseng, H, Jammy, R

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Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO 2 film von Balasubramanian, M., Bera, L.K., Mathew, Shajan, Balasubramanian, N., Lim, Vanissa, Joo, M.S., Cho, B.J.

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hbox Al_2hbox O_3$ –Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates von Yu, D.S., Huang, C.H., Chin, A., Zhu, C., Li, M.F., Cho, B.J., Kwong, D.-L.

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