High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures von Zhuravlev, K. S., Gilinsky, A. M., Chistokhin, I. B., Valisheva, N. A., Dmitriev, D. V., Toropov, A. I., Aksenov, M. S., Chizh, A. L., Mikitchuk, K. B.

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The Radiation Hard BGO Crystals for Astrophysics Applications von Grigoriev, D. N., Akhmetshin, R. R., Babichev, E. A., Borovlev, Yu A., Chistokhin, I. B., Ivannikova, N. V., Kazanin, V. F., Kuznetsov, G. N., Postupaeva, A. G., Shlegel, V. N., Vasiliev, Ya V.

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About the nature of the barrier inhomogeneities at Au/Ti/n-InAlAs(001) Schottky contacts von Aksenov, M. S., Valisheva, N. A., Chistokhin, I. B., Dmitriev, D. V., Kozhukhov, A. S., Zhuravlev, K. S.

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Photon Detectors and Emitters for Quantum Communication Systems and Quantum Frequency Standards von Preobrazhenskii, V. V., Chistokhin, I. B., Ryabtsev, I. I., Haisler, V. A., Toropov, A. I.

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Photoconductivity of ultra-thin Ge(GeSn) layers grown in Si by low-temperature molecular beam epitaxy von Talochkin, A. B., Chistokhin, I. B., Mashanov, V. I.

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Solar energy converters based on multi-junction photoemission solar cells von Tereshchenko, O. E., Golyashov, V. A., Rodionov, A. A., Chistokhin, I. B., Kislykh, N. V., Mironov, A. V., Aksenov, V. V.

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A Diode-Based Detector of Fast Neutral Atoms at a Gas Dynamic Trap von Pinzhenin, E. I., Maximov, V. V., Chistokhin, I. B.

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High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines von Chizh, A. L., Mikitchuk, K. B., Zhuravlev, K. S., Dmitriev, D. V., Toropov, A. I., Valisheva, N. A., Aksenov, M. S., Gilinsky, A. M., Chistokhin, I. B.

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InAlAs/InGaAs/InP heterostructures for microwave photodiodes grown by molecular beam epitaxy von Dmitriev, D V, Valisheva, N A, Gilinsky, A M, Chistokhin, I B, Toropov, A I, Zhuravlev, K S

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A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure von Putyato, M. A., Valisheva, N. A., Petrushkov, M. O., Preobrazhenskii, V. V., Chistokhin, I. B., Semyagin, B. R., Emel’yanov, E. A., Vasev, A. V., Skachkov, A. F., Yurko, G. I., Nesterenko, I. I.

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Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P2-Based Source von Petrushkov, M. O., Putyato, M. A., Chistokhin, I. B., Semyagin, B. R., Emel’yanov, E. A., Esin, M. Yu, Gavrilova, T. A., Vasev, A. V., Preobrazhenskii, V. V.

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The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes von Chistokhin, I. B., Aksenov, M. S., Valisheva, N. A., Dmitriev, D. V., Marchishin, I. V., Toropov, A. I., Zhuravlev, K. S.

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Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes von Rodionov, A. A., Golyashov, V. A., Chistokhin, I. B., Jaroshevich, A. S., Derebezov, I. A., Haisler, V. A., Shamirzaev, T. S., Marakhovka, I. I., Kopotilov, A. V., Kislykh, N. V., Mironov, A. V., Aksenov, V. V., Tereshchenko, O. E.

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Features of current flow in structures based on Au/Ti/n-InAlAs Schottky barriers von Chistokhin, I. B., Aksenov, M. S., Valisheva, N. A., Dmitriev, D. V., Zhuravlev, K. S., Guzev, A. A.

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An electron–hole spectrum of Ge/Si structures with Ge quantum dots: photoconductivity measurements von Talochkin, A B, Chistokhin, I B, Markov, V A

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The Influence of the Conditions of Getter Formation in High-Resistivity Silicon on the Characteristics of PIN Photodiodes von Chistokhin, I. B., Fritzler, K. B.

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Evaluation of a Junction Termination Extension Avalanche Photodiode for X-Ray Detection von Gramsch, E., Pchelyakov, O.P., Chistokhin, I.B., Tishkovsky, E.G.

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Resonance reflection of light by ordered silicon nanopillar arrays with the vertical p-n junction von Basalaeva, L.S., Nastaushev, Yu.V., Kryzhanovskaya, N.V., Moiseev, E.I., Radnatarov, D.A., Khripunov, S.A., Utkin, D.E., Chistokhin, I.B., Latyshev, A.V., Dultsev, F.N.

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Barrier characteristics and interface properties of Au/Ti/n-InAlAs Schottky contacts von Chistokhin, I.B., Aksenov, M.S., Valisheva, N.A., Dmitriev, D.V., Kovchavtsev, A.P., Gutakovskii, A.K., Prosvirin, I.P., Zhuravlev, K.S.

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Annealing effect on the barrier characteristics and interface properties of Au/Pt/Ti/n-InAlAs Schottky contacts von Aksenov, M.S., Genze, I.Yu, Chistokhin, I.B., Zakirov, E.R., Dmitriev, D.V., Zhuravlev, K.S., Gutakovskii, A.K., Golyashov, V.A., Tereshchenko, O.E.

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