A new combination-erase technique for erasing nitride based (SONOS) nonvolatile memories von Chindalore, G.L., Swift, C.T., Burnett, D.

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Computationally efficient models for quantization effects in MOS electron and hole accumulation layers von Hareland, S.A., Manassian, M., Shih, W.-K., Jallepalli, S., Wang, H., Chindalore, G.L., Tasch, Al.F., Maziar, C.M.

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A physically-based model for quantization effects in hole inversion layers von Hareland, S.A., Jallepalli, S., Wei-Kai Shih, Haihong Wang, Chindalore, G.L., Tasch, A.F., Maziar, C.M.

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Models for electron and hole mobilities in MOS accumulation layers von Mudanai, S., Chindalore, G.L., Shih, W.-K., Wang, H., Ouyang, Q., Tasch, A.F., Maziar, C.M., Banerjee, S.K.

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An improved technique and experimental results for the extraction of electron and hole mobilities in MOS accumulation layers von Chindalore, G.L., McKeon, J.B., Mudanai, S., Hareland, S.A., Shih, W.-K., Wang, C., Tasch, A.F., Maziar, C.M.

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An embedded 90 nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase von Swift, C.T., Chindalore, G.L., Harber, K., Harp, T.S., Hoefler, A., Hong, C.M., Ingersoll, P.A., Li, C.B., Prinz, E.J., Yater, J.A.

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